• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.574-580
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• 2022

While in the process of electroless plating of dendrite-shape copper with silver, various silver-coated copper (Ag@Cu) particles were prepared by using both displacement plating and reducing electroless plating. The physicochemical properties of Ag@Cu particles were analyzed by scanning electron microscope- energy-dispersive X-ray spectroscopy (SEM-EDS), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Brunauer-Emmett-Teller analysis (BET), and it was confirmed that the silver coated by the reducing electroless plating was formed as nano-particles on the copper surface. Ag@Cu particles were compounded with an epoxy resin to prepare a conductive film, and its thermal stability was evaluated. We investigated the effect of the difference between the displacement plating and reducing electroless plating on the initial resistance and thermal stability of conductive films.

• Journal of Power System Engineering
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• v.4 no.2
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• pp.31-39
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• 2000

Relationships between the plating condition and the plating rate of the deposition film for the electroless plating of Co-Cu-P alloy were discussed in this report. The result obtained from this experiment were summarized as follow ; The optimum bath composition was consisted of 0.8 ppm thiourea as a stabilizing agent. Composition of the deposit was found to be uniform after two hours of electroless plating. Plating rates of nickel-catalytic surface and zincate-catalytic surface were found to be very closely equal, but the plating time of nickel-catalytic surface took longer than that of the zincated-catalytic surface.

• Journal of the Korean Society of Clothing and Textiles
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• v.27 no.7
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.121-126
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• 2000

The effect of electroless Ni and Cu plating on $LaNi_5$, $AB_5$ type hydrogen storage alloy was investigated by the various electrochemical techniques such as constant current charge-discharge test, cyclic voltammeoy, and a.c. impedance spectroscopy. Scanning electron microscopy and X-ray diffraction test were conducted for phenomenological logical analyses. Cyclic Voltammetry results show that activation characteristics, cycle life and reaction ,rate were improved through electroless Ni and Cu plating. Compared with bare $LaNi_5$ the charge transfer resistance of electrode was greatly reduced as charge-discharge cycle increases. Therefore, electroless Ni and Cu plating on $LaNi_5$ alloy tends to accelerate the early activation, increasing the cyclic lift of electrode.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.95-99
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• 2001

Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New humping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study

• Resources Recycling
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• v.10 no.2
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• pp.27-33
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• 2001

Reusing of electroless Ni-Cu-P waste solution was investigated in the plating time, plating rate, solution composion and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 50f) waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 10 times over than that of batch type. Plating time of 50% waste solution additive at continuous type took longer 3.7 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by depolited inferiority and larger decreased plating rate.

• Resources Recycling
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• v.12 no.1
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• pp.18-24
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• 2003

Reusing of electroless Ni-Cu-B waste solution was investigated in the plating time, plating rate, solution composition and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 40% waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 6 times over than that of batch type. Plating time of 40% waste solution additive at continuous type took longer 2 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by deposited inferiority and larger decreased plating rate.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.