• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.349-349
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• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.12-17
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• 2011

In this paper, we report on the improved electrical and optical characteristics for decreasing current crowding effect and uniform current distribution by designing octagonal finger type electrode pattern in large-scale lateral GaN (Gallium Nitride) LED (Light-emitting diode) with numerical 3-D simulator. Compared with the conventional electrode pattern, proposed electrode pattern was investigated to confirm the improvement of characteristics. From the simulation results of 3-D SpeCLED/RATRO simulator, we found that the forward voltage was decreased by 0.34 V and the light output power was improved by 7.72 mW at the same injection current condition in the LED with proposed octagonal finger type electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.43-44
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• 2006

We have studied effect of Patterned Vertical Alignment (PVA) mode on electro-optical characteristics and stability of liquid crystal director upon electrode pattering. In the present studies, LC director field and stability of conventional PVA mode electrode patterns were analyzed and new type of electrode patterns were suggested. At last, comparison between this new type of electrode patterns to conventional electrode pattern types were followed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.566-570
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• 2014

Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.53 no.2
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• pp.103-110
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• 2004

This paper proposes a new method on the EMG AR(autoregressive) modeling in pattern recognition for various head motions. The proper electrode placement in applying AR or cepstral coefficients for EMG signature discrimination is investigated. EMG signals are measured for different 10 motions with two electrode arrangements simultaneously. Electrode pairs are located separately on dominant muscles(S-type arrangement), because the bandwidth of signals obtained from S-type placement is wider than that from C-type(closely in the region between muscles). From the result of EMG pattern recognition test, the proposed mIAR(modified integrated mean autoregressive model) technique improves the recognitions rate around 17-21％ compared with other the AR and cepstral methods.

• New & Renewable Energy
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• v.18 no.4
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• pp.64-69
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• 2022

Double-sided photovoltaic (PV) modules have received significant attention in recent years as a technology that can achieve higher annual energy production rates than single-sided modules. The shingled technology is a promising method for manufacturing high-density and high-power modules. These modules are divided by laser and joined with electrically conductive adhesives. The output efficiency of the divided cells depends on the division pattern and the electrode pattern, making it important to understand the output characteristics. In this study, the output characteristics of large-area double-sided light-receiving shingled cells with different split patterns and electrode patterns were investigated. The M6 size, with 6 divisions in the electrode pattern, had the highest efficiency when using 142 front fingers and 146 rear fingers. The M10 size, with 7 divisions, had the highest output when using 150 fingers equally in the front and rear. The M12 size, also with 7 divisions, showed the highest output characteristics when using 192 front fingers and 208 rear fingers.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.165-171
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• 2011

In this work, handling of sapphire substrate for LED by using an electrostatic chuck was studied. The electrostatic chuck consisted of alumina dielectric, which was doped with 1.2 wt% $TiO_2$. As the volume resistivity of alumina dielectric was decreased, the electrostatic force was increased by Johnsen-Rahbek effect. The narrower width and gap size of electrode led to the stronger electrostatic force. When alumina dielectric with $3.20{\times}10^{11}{\Omega}{\cdot}cm$ resistivity and 3 mm width/1.5 mm gap sized electrode was used, the strongest electrostatic force in this work was obtained, which value reached to ~14.46 gf/$cm^2$ at 2.5 kV for 4-inch sapphire substrate. This results show that alumina electrostatic chuck with low resistivity and fine electrode pattern is suitable for handling of sapphire substrate for LED.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.231-232
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• 2008

The effect of n-electrode patterns on the current distribution in active region is investigated in GaN-based blue vertical light emitting diodes (VLEDs). A 3-dimension circuit model is adopted to analyze the current flow patterns in VLEDs. We had fabricated VLEDs having different n-electrode patterns, measured their current-voltage characteristics, and compared to the numerical simulation. It turns out that the current spreading in VLEDs is strongly dependent on the n-electrode pattern. Some design guidelines for n-electrode patterns to produce uniform current injection are presented.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.4
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• pp.107-113
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• 2022

At present, it is possible to manufacture electrodes down to several micrometers (~ ㎛) using inkjet printing technology owing to the development of precision ejection heads. Inkjet printing technology is also used in the manufacturing of bio-sensors, electronic sensors, and flexible displays. To reduce the difference between the electrode design/simulation performance and actual printing pattern performance, it is necessary to analyze and optimize the processable area of the ink material, which is a fluid. In this study, process optimization was conducted to manufacture an IDE pattern and fabricate an impedance sensor. A total of 25 IDE patterns were produced, with five for each lamination process. Electrode line width and height changes were measured by stacking the designed IDE pattern with a nanoparticle-based conductive ink multilayer. Furthermore, the optimal process area for securing a performance close to the design result was analyzed through impedance and capacitance. It was observed that the increase in the height of stack layer 4 was the lowest at 4.106%, and the increase in capacitance was measured to be the highest at 44.08%. The proposed stacking process pattern, which is optimized in terms of uniformity, reproducibility, and performance, can be efficiently applied to bio-applications such as biomaterial sensing with an impedance sensor.