• 한국분말재료학회지
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• 제8권3호
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• pp.201-206
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• 2001

$>LaMnO_3$$(La, Sr)MO_3$, and $(La, Sr)MO_3/YSZ$ gel films were deposited by spin-coating technique on scandium-doped zirconia (YSZ) substrate using the precursor solution prepared from $La(O-i-C_3H_7)_3$, $Co(CH_3COO)_2$or $Mn(O-i-C_3H_7)_2$,2-methoxyethanol, and polyethylene glycol. By heat-treating the gel films, the electrochemical cells, $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ were fabricated. The effect of polyethylene glycol on the microstructure evolution of $$LaCoO_3and $LaMnO_3$thin films was investigated, and NOx decomposition characteristics of the electrochemical cells were investigated at $500^{\circ}C$ to $600^{\circ}C$. By applying a direct current to the $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ electrochemical cell, good NOx conversion rate could be obtained relatively at low current value even if excess oxygen is included in the reaction gas mixture.

• 센서학회지
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• 제15권1호
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.126-129
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• 2003

The electrical properties of a ZnO-based multilayered chip varistor (abbreviated as MLV) were studied as functions of firing condition and the degree of lamination. The fundamental varistor characteristics such as nonlinear coefficient and breakdown voltage were independent of the degree of lamination. As the number of the laminated ceramic sheets increased, however, not only the energy handling capability but also the capacitance and the leakage current which are relevant to delayed response to the voltage surge and the pre-breakdown energy loss, respectively, increased. With the increase of firing temperature between $950^{\circ}C$ and $1150^{\circ}C$, both the capacitance and the leakage current of the MLV increased due mainly to the grain growth of ZnO and the volatilization of $BiO_2O_3$. High performance MLVs with clear electrode pattern were obtained at the firing temperature range of $l000{\sim}1050^{\circ}C$ in this experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• 한국세라믹학회지
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• 제43권12호
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• pp.805-811
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• 2006

The microstructural changes in Ni/YSZ anode substrate and crack formation during Ni oxidation were investigated. The composition of as-sintered anodes was 56 wt% NiO+44 wt% YSZ and that of electrolyte was 8 mol% yttria. After complete reduction, specimens were oxidized in $N_2$ + air at $600\sim800^{\circ}C$. Oxygen partial pressure was controlled in between 0.05 atm and 0.2 atm $O_2$. When the anode was oxidized, at higher than $690^{\circ}C$, three layers were formed in the specimens. The first was fully oxidized layer(NiO/YSZ), the second was a mixed layer and the third, near-intact layer. Under $640^{\circ}C$ such distinctive layers were not observed. Cracks formed at electrolyte layer when weight gain attained at $65\sim75%$ of the total gain due to complete oxidation despite of different oxidation temperature and oxygen partial pressure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.108-109
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• 2007

Microstructure and electrical properties of Ga-doped ZnO (GZO) films grown on $Al_2O_3$ templates by Pulsed Laser Deposition (PLD) are investigated utilizing X-ray diffraction method and Hall measurement, respectively. In order to determine the optimized operating condition of the PLD, statistical design of experiment (DOE) is employed. It provides the systematic and efficient methodology for characterization and modeling of PLD processing with a relatively small number of experiments. The most optimized recipe of the process factors is obtained by response optimizer in Minitab.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• 한국정밀공학회지
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• 제21권11호
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• pp.186-194
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• 2004

In this research, microfabrication technique using localized electrochemical deposition (LECD) with ultra short pulses is presented. Electric field is localized near the tool tip end region by applying a few hundreds of nano second pulses. Pt-Ir tip is used as a counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The effectiveness of this technique is verified by comparison with LECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration are investigated. The proper condition is selected from the results of the experiments. Micro columns less than 10 $\mu$m in diameter are fabricated using this technique. The real 3D micro structures such as micro pattern and micro spring can be fabricated by this method. It is suggested that presented method can be used as an easy and inexpensive method for fabrication of microstructure with complex shape.

• Corrosion Science and Technology
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• 제21권6호
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• pp.445-453
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• 2022

SiO_x was prepared from a mixture of Si and SiO₂ via high-energy ball milling as a negative electrode material for Li-ion batteries. The molar ratio of Si to SiO₂ as precursors and the milling time were varied to identify the synthetic condition that could exhibit desirable anode performances. With an appropriate milling time, the material showed a unique microstructure in which amorphous Si nanoparticles were intimately embedded within the SiO₂ matrix. The interface between the Si and SiO₂ was composed of silicon suboxides with Si oxidation states from 0 to +4 as proven by X-ray photoelectron spectroscopy and electrochemical analysis. With the addition of a conductive carbon (Super P carbon black) as a coating material, the SiO_x/C manifested superior specific capacity to a commercial SiO_x/C composite without compromising its cycle-life performance. The simple mechanochemical method described in this study will shed light on cost-effective synthesis of high-capacity silicon oxides as promising anode materials.