• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2085-2087
• /
• 2005

In this paper the experiments of insulation characteristics by temperature change of $SF_6$ gas and liquid $SF_6$ in model GIS(Gas Insulated Switchgear) were described. From this results, the breakdown voltage was increased with a drop of temperature and an increase of the inner pressure in model GIS. The ability of insulation in liquid $SF_6$ was higher than that of the highly pressurized $SF_6$ gas. A liquid $SF_6$ discharge characteristics was caused by bubble formed evaporation of liquid $SF_6$ and bubble caused by high electric emission. It is considered that these result are fundamental data for electric insulation design of superconductor and cryogenic application machinery which will be studied and developed in the future.

• Journal of the Korean Applied Science and Technology
• /
• v.16 no.4
• /
• pp.323-327
• /
• 1999

A water-soluble conducting polymer (CPP400 Paste) containing a derivative of polythiophene with several dopant was investigated as an anode material for organic electroluminescent devices. The device of ITO/CPP 400 Paste/TPD/$Alq_3$/Li:Al was fabricated, where CPP 400 Paste films were prepared by spin coating and TPD and $Alq_3$, films were prepared by vacuum evaporation. It was found that the turn-on voltage, current density, and luminance of the devices were dependent upon the thickness of CPP 400 Paste film in the Electroluminescent and current-voltage characteristics of the devices. This phenomena were explained by the energy level diagram of the device with the energy levels of the CPP400 Paste obtained by cyclic voltammetric method.

• Journal of the Korean Applied Science and Technology
• /
• v.16 no.4
• /
• pp.313-316
• /
• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, a conjugated oligomer such as ${\alpha}$-sexithiophene (${\alpha}$-6T) thin films was prepared by the Organic Molecular Beam Deposition (OMBD), and various electrode materials were also deposited by a simple vacuum evaporation, respectively. Those films were photolithographically patterned for the electrical measurements. Electrical charact-erization of the thin film transistor with various channel length were executed and the field effect mobility of these thin film transistors were also calculated by the formula using the experimental data.

• Korean Journal of Materials Research
• /
• v.30 no.12
• /
• pp.687-692
• /
• 2020

A zinc-air battery consists of a zinc anode, an air cathode, an electrolyte, and a separator. The active material of the positive electrode is oxygen contained in the ambient air. Therefore, zinc-air batteries have an open cell configuration. The external condition is one of the main factors for zinc-air batteries. One of the most important external conditions is temperature. To confirm the effect of temperature on the electrochemical properties of zinc-air batteries, we perform various analyses under different temperatures. Under 60 ℃ condition, the zinc-air cell shows an 84.98 % self-discharge rate. In addition, high corrosion rate and electrolyte evaporation rate are achieved at 60 ℃. Among the cells stored at various temperature conditions, the cell stored at 50 ℃ delivers the highest discharge capacity; it also shows the highest self-discharge rate (65.33 %). On the other hand, the cell stored at 30 ℃ shows only 2.28 % self-discharge rate.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.134-134
• /
• 2010

Fuel cell is a device that directly converts chemical energy in the form of a fuel into electrical energy by way of an electrochemical reaction. In the anode for a high temperature fuel cell, nickel or nickel alloy has been used in consideration of the cost, oxidation catalystic ability of hydrogen which is used as fuel, electron conductivity, and high temperature stability in reducing atmosphere. Most MCFC stacks currently operate at an average temperature of $650^{\circ}C$. There is some gains with decreased temperature in MCFC to diminish the electrolyte loss from evaporation and the material corrosion, which could improve the MCFC life. However, operating temperature has a strong related on a number of electrode reaction rates and ohmic losses. Baker et al. reported the effect of temperature (575 to $650^{\circ}C$). The rates of cell voltage loss were 1.4mV/$^{\circ}C$ for a reduction in temperature from 650 to $600^{\circ}C$, and 2.16mV/$^{\circ}C$ for a decrease from 600 to $575^{\circ}C$. The two major contributors responsible for the change in cell voltage with reducing operation temperature are the ohmic polarization and electrode polarization. It appears that in the temperature range of 550 to $650^{\circ}C$, about 1/3 of the total change in cell voltage with decreasing temperature is due to an increase in ohmic polarization, and the electrode polarization at the anode and cathode. In addition, the oxidation reaction of hydrogen on an ordinary nickel alloy anode in MCFC is generally considered to take place in the three phase zone, but anyway the area contributing to this reaction is limited. Therefore, in order to maintain a high performance of the fuel cell, it is necessary to keep this reaction responsible area as wide as possible, that is, it is needed to keep the porosity and specific surface area of the anode at a high level. In this study effective anodes are prepared for low temperature MCFC capable of enhancing the cell performance by using zirconium hydride at least in part of anode material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.8
• /
• pp.587-592
• /
• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Applied Chemistry for Engineering
• /
• v.8 no.6
• /
• pp.1022-1028
• /
• 1997

This work was performed to study the characteristics of electrochemical intercalation reactions occurring at the interface between the organic electrolyte and tungsten trioxide thin film (thickness of $4000{\AA}$) prepared by e-beam evaporation method as cathodically coloring oxide with regard to the electrochromism by the intercalating reactions of the lithium cation in the 1M $LiClO_4/PC$ organic solution. The characteristics of electrochemical intercalation reactions were investigated by various DC electrochemical methods such as cathodic Tafel polarization test, multiple and the single sweep cyclic voltammetry and the coulomety titrations method. The surfaces of thin films were observed with the patterns of X ray diffraction after the coloring and bleaching reactions. In comparison with the previous results that $WO_3$ thin film intersely detached from the surface of electrode when the hydrogen cation was intercalated into $WO_3$ thin film in the o.1N $H_2SO_4$ aqueous solution, the intercalation reaction of lithium cation into $WO_3$ thin film in the 1M $LiClO_4/PC$ organic solution was shown that the stable bleaching and coloration was appeared within 1.0V of the applied overpotential. When the overpotential of electrochromic reaction for lithium cation in the 1M $LiClO_4/PC$ organic solution had been applied up to 1.5V, the accumulation phenomenon of lithium in amorphous $WO_3$ thin film layer occurred because the inserted lithium into amorphous $WO_3$ thin layer for coloring process was not fully removed from the thin layer to the electrolyte during bleaching process. It was found that there is a limitation of applied overpotential for coloring process by the reduction of the current densities of bleaching and coloration after few number of coloring and bleaching cycles.

• Applied Chemistry for Engineering
• /
• v.3 no.1
• /
• pp.88-99
• /
• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.115-123
• /
• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.1
• /
• pp.9-13
• /
• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.