• Korean Journal of Materials Research
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• v.15 no.11
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• pp.745-750
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• 2005

Polycarbonates are widely used as housing materials of electronic handsets. Since the polycarbonate is electrically insulating, there should be a conducting layer on the polycarbonate for EMI shielding. In this study, we sputter deposited Cu films on the polycarbonate substrates for EMI shielding. Plasma treatments of polycarbonates were used to increase the adhesion strength of the Cu film/polycarbonate interface. The surface energy of the polycarbonate was greatly increased from $30mJ/m^2 \;to\; 65mJ/m^2$ by a 200 W $O_2$ plasma treatment for 10s. It is thought that this is because of the ion bombardment. The adhesion strength of the sputter deposited Cu film to the polycarbonate was quantitatively measured by a 4 point bending tester. A moderate plasma surface treatment of the polycarbonate increased the Cu film/polycarbonate adhesion strength by $30\%$. The EMI shielding efficiency of the sputter deposited $10{\mu}m$ Cu lam on the polycarbonate showed 90dB in the range of 100MHz to 1000MHz.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.131-138
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• 2019

To improve the performance of Si anodes in advanced Li-ion batteries, the design of the electrode plays a critical role, especially due to the large volumetric expansion in the Si anode during Li insertion. In our study, we used a simple fabrication method to prepare Si-based electrodes by grafting polyacrylic acid (PAA) to a carboxymethyl cellulose (CMC) binder (CMC-g-PAA). The procedure consists of first mixing nano-sized Si and the binders (CMC and PAA), and then coating the slurry on a Cu foil. The carbon network was formed via carbonization of the binders i.e., by a simple heat treatment of the electrode. The carbon network in the electrode is mechanically and electrically robust, which leads to higher electrical conductivity and better mechanical property. This explains its long cycle performance without the addition of a conducting agent (for example, carbon). Therefore, the partially carbonized CMC-g-PAA binder presented in this study represents a new feasible approach to produce Si anodes for use in advanced Li-ion batteries.

• Composites Research
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• v.19 no.5
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• pp.7-11
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• 2006

The improved SWNTs/PANi composite actuator films applicable to an artificial muscle were fabricated successfully using a new process of manufacture that consists of 90% pure single-walled carbon nanotubes (SWNT) and chemical polymerization. PANi is electrically conducting polyaniline polymer. The conductivities of the composite SWNTs/PANi film-type actuators and the pure PANi films fabricated were measured as 56.15 S/cm and 17.38 S/cm, respectively, by the 4-prove method. The conductivity of the composite actuator is 3.2 times higher than the pure PANi film. The fabricated composite actuator showed higher conductivity than any other similar ones. The quality of samples was investigated by an electron scanning microscope (SEM). To measure the actuating strains, a specially designed beam balance apparatus was developed and strains of the composite actuators was measured by a laser displacement sensor subjected to electric currents. During the operation, the sample was soaked in the $NaNO_3$ solution and the sine-wave voltage in the range of $+1V{\sim}-1V$ was applied. The length of the composite actuator changed from $l_0=12.690$ mm to $l_1=12.733$ so that the change of length was l=0.043 mm and the strain was 0.34 %. This is a very high strain for this kind of a composite actuator. Other result reported by Tahhan showed 0.23 % strain, so that the present result is improved by 48%.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of Computational Design and Engineering
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• v.3 no.4
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• pp.349-362
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• 2016

The numerical solutions of unsteady hydromagnetic natural convection Couette flow of a viscous, incompressible and electrically conducting fluid between the two vertical parallel plates in the presence of thermal radiation, thermal diffusion and diffusion thermo are obtained here. The fundamental dimensionless governing coupled linear partial differential equations for impulsive movement and uniformly accelerated movement of the plate were solved by an efficient Finite Element Method. Computations were performed for a wide range of the governing flow parameters, viz., Thermal diffusion (Soret) and Diffusion thermo (Dufour) parameters, Magnetic field parameter, Prandtl number, Thermal radiation and Schmidt number. The effects of these flow parameters on the velocity (u), temperature (${\theta}$) and Concentration (${\phi}$) are shown graphically. Also the effects of these pertinent parameters on the skin-friction, the rate of heat and mass transfer are obtained and discussed numerically through tabular forms. These are in good agreement with earlier reported studies. Analysis indicates that the fluid velocity is an increasing function of Grashof numbers for heat and mass transfer, Soret and Dufour numbers whereas the Magnetic parameter, Thermal radiation parameter, Prandtl number and Schmidt number lead to reduction of the velocity profiles. Also, it is noticed that the rate of heat transfer coefficient and temperature profiles increase with decrease in the thermal radiation parameter and Prandtl number, whereas the reverse effect is observed with increase of Dufour number. Further, the concentration profiles increase with increase in the Soret number whereas reverse effect is seen by increasing the values of the Schmidt number.

• Journal of the Society of Naval Architects of Korea
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• v.32 no.1
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• pp.83-93
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• 1995

A numerical and experimental investigation on the flow characteristics in the rectangular duct of an MHD propulsion system has been carried out. In numerical analysis, three-dimensional, steady-state, viscous, incompressible electrically conducting fluid flow under the influence of uniformly applied magnetic and electric fields was treated using a finite-difference technique. It was found from the numerical study that when the Lorentz force is weak, the typical parabolic velocity profile under a laminar flow condition changes to an M shaped profile near the electrode region and that the pressure increases linearly from the inlet toward the outlet of the MHD duct under constant electro-magnetic field. In experiment, thrust of the MHD propulsion system can be controlled easily by varying electrode current. The measured pressure gradient along the MHD duct is proportional to the Lorentz force, which is in agreement with the numerical results.

• Journal of Biomedical Engineering Research
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• v.28 no.1
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• pp.8-16
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• 2007

Finite element analysis (FEA) is an effective means for the analysis of bioelectromagnetism. It has been successfully applied to various problems over conventional methods such as boundary element analysis and finite difference analysis. However, its utilization has been limited due to the overwhelming computational load despite of its analytical power. We have previously developed a novel mesh generation scheme that produces FE meshes that are content-adaptive to given MR images. MRI content-adaptive FE meshes (cMeshes) represent the electrically conducting domain more effectively with far less number of nodes and elements, thus lessen the computational load. In general, the cMesh generation is affected by the quality of feature maps derived from MRI. In this study, we have tested various feature maps created based on the improved differential geometry measures for more effective cMesh head models. As performance indices, correlation coefficient (CC), root mean squared error (RMSE), relative error (RE), and the quality of cMesh triangle elements are used. The results show that there is a significant variation according to the characteristics of specific feature maps on cMesh generation, and offer additional choices of feature maps to yield more effective and efficient generation of cMeshes. We believe that cMeshes with specific and improved feature map generation schemes should be useful in the FEA of bioelectromagnetic problems.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.5
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• pp.305-311
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• 2016

Induction heating is the process in which an electrically conducting object (usually a metal) is heated by electromagnetic induction through heat generated in the object by eddy currents. The main advantage of an induction heating device is the generation of the heat inside the target object itself. Hence, non-contact and safe heating devices are widely used in many industrial and medical fields. Recently, a new dental implant system was developed using a shape-memory alloy, wherein an artificial tooth could be easily removed from the dental implant by heating. This paper discusses the development of an induction-heating device to remove the dental crown in the new implant system. First, the finite element simulation of electromagnetic and thermal coupling analysis was implemented to obtain the temperature distributions of the target object for various frequencies, input currents, and coil shapes. Based on the simulation results, experiments were conducted by using prototypes, and an induction heating device was developed to remove the dental crown from the implant.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.