• 한국재료학회지
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• 제15권11호
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• pp.745-750
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• 2005

Polycarbonates are widely used as housing materials of electronic handsets. Since the polycarbonate is electrically insulating, there should be a conducting layer on the polycarbonate for EMI shielding. In this study, we sputter deposited Cu films on the polycarbonate substrates for EMI shielding. Plasma treatments of polycarbonates were used to increase the adhesion strength of the Cu film/polycarbonate interface. The surface energy of the polycarbonate was greatly increased from $30mJ/m^2 \;to\; 65mJ/m^2$ by a 200 W $O_2$ plasma treatment for 10s. It is thought that this is because of the ion bombardment. The adhesion strength of the sputter deposited Cu film to the polycarbonate was quantitatively measured by a 4 point bending tester. A moderate plasma surface treatment of the polycarbonate increased the Cu film/polycarbonate adhesion strength by $30\%$. The EMI shielding efficiency of the sputter deposited $10{\mu}m$ Cu lam on the polycarbonate showed 90dB in the range of 100MHz to 1000MHz.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.131-138
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• 2019

To improve the performance of Si anodes in advanced Li-ion batteries, the design of the electrode plays a critical role, especially due to the large volumetric expansion in the Si anode during Li insertion. In our study, we used a simple fabrication method to prepare Si-based electrodes by grafting polyacrylic acid (PAA) to a carboxymethyl cellulose (CMC) binder (CMC-g-PAA). The procedure consists of first mixing nano-sized Si and the binders (CMC and PAA), and then coating the slurry on a Cu foil. The carbon network was formed via carbonization of the binders i.e., by a simple heat treatment of the electrode. The carbon network in the electrode is mechanically and electrically robust, which leads to higher electrical conductivity and better mechanical property. This explains its long cycle performance without the addition of a conducting agent (for example, carbon). Therefore, the partially carbonized CMC-g-PAA binder presented in this study represents a new feasible approach to produce Si anodes for use in advanced Li-ion batteries.

• Composites Research
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• 제19권5호
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• pp.7-11
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• 2006

SWNT(Single-Walled Carbon Nanotubes)와 도전성 고분자 PANi(Polyaniline)로 구성된 복합재료 합성물질을 제조하여 전기적 기계적 특성을 실험적으로 조사하였다. 이러한 재료는 인공근육 등으로 사용될 수 있어서 미소 인공생물체및 로봇의 구동에 응용될 수 있다. 이 작동기는 90% 순도의 SWNT와 화학적 Polymerization을 이용하여 본 연구실에서 개발된 완전히 새로운 방식으로 제조되었다. 4 탐침 측정법(4-probe method)을 사용하여 이 필름형 복합재 작동기의 전기전도도를 측정한 결과 56.15 S/cm의 값을 나타냈으며, 순수 PANi은 17.38 S/cm를 나타내었다. 순수한 도전성 폴리머 보다 3.2배 높은 전도성을 나타내었다. 이 작동기의 재료적 특성은 SEM을 사용하여 분석하였으며, 우수한 특성을 갖고 있었다. 전압이 작용할 때 변형률을 측정하기 위해서 레이저 측정 센서가 부착된 측정장치가 개발되었으며, $NaNO_3$ 용액 속에서 작동되며, 1볼트의 전압이 가해졌다. 초기 길이 12.690 mm에서 12.733 mm로 늘어났으며, 0.34%의 변형률이 계산되었다. 이 값은 호주 Tahhan의 0.23%보다 48% 정도 높은 변형률이다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of Computational Design and Engineering
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• 제3권4호
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• pp.349-362
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• 2016

The numerical solutions of unsteady hydromagnetic natural convection Couette flow of a viscous, incompressible and electrically conducting fluid between the two vertical parallel plates in the presence of thermal radiation, thermal diffusion and diffusion thermo are obtained here. The fundamental dimensionless governing coupled linear partial differential equations for impulsive movement and uniformly accelerated movement of the plate were solved by an efficient Finite Element Method. Computations were performed for a wide range of the governing flow parameters, viz., Thermal diffusion (Soret) and Diffusion thermo (Dufour) parameters, Magnetic field parameter, Prandtl number, Thermal radiation and Schmidt number. The effects of these flow parameters on the velocity (u), temperature (${\theta}$) and Concentration (${\phi}$) are shown graphically. Also the effects of these pertinent parameters on the skin-friction, the rate of heat and mass transfer are obtained and discussed numerically through tabular forms. These are in good agreement with earlier reported studies. Analysis indicates that the fluid velocity is an increasing function of Grashof numbers for heat and mass transfer, Soret and Dufour numbers whereas the Magnetic parameter, Thermal radiation parameter, Prandtl number and Schmidt number lead to reduction of the velocity profiles. Also, it is noticed that the rate of heat transfer coefficient and temperature profiles increase with decrease in the thermal radiation parameter and Prandtl number, whereas the reverse effect is observed with increase of Dufour number. Further, the concentration profiles increase with increase in the Soret number whereas reverse effect is seen by increasing the values of the Schmidt number.

• 대한조선학회논문집
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• 제32권1호
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• pp.83-93
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• 1995

사각형의 MHD 추진 덕트 내부유동을 수치해석과 실험적인 방법으로 연구하였다. 수치해석연구에서는 전기장과 자기장의 영향하에 있는 비압축성 3차원 통전유체에 대하여 유한 차분법으로 계산하였다. 수치계산의 결과 전자기력이 약할때 층류유동의 전형적인 포물선 유동 형태가 전극 부근에서 M자 형상으로 변하였고, 균일분포의 일정 전자기력하에서 MHD 덕트 내부 압력은 입구에서부터 하류로 나아감에 따라 선형적으로 증가하였다. 실험에서는 MHD 추진 덕트 내부 유동을 해석할 수 있는 실험장치를 제작 하였으며, MHD 추진은 전류를 변화 시킴으로써 추력을 쉽게 조정할 수 있음을 알았다. 또한 MHD 덕트내 유동방향의 압력구배는 전자기력에 비례하여 증가하며 수치계산 결과와 잘 일치하였다.

• 대한의용생체공학회:의공학회지
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• 제28권1호
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• pp.8-16
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• 2007

Finite element analysis (FEA) is an effective means for the analysis of bioelectromagnetism. It has been successfully applied to various problems over conventional methods such as boundary element analysis and finite difference analysis. However, its utilization has been limited due to the overwhelming computational load despite of its analytical power. We have previously developed a novel mesh generation scheme that produces FE meshes that are content-adaptive to given MR images. MRI content-adaptive FE meshes (cMeshes) represent the electrically conducting domain more effectively with far less number of nodes and elements, thus lessen the computational load. In general, the cMesh generation is affected by the quality of feature maps derived from MRI. In this study, we have tested various feature maps created based on the improved differential geometry measures for more effective cMesh head models. As performance indices, correlation coefficient (CC), root mean squared error (RMSE), relative error (RE), and the quality of cMesh triangle elements are used. The results show that there is a significant variation according to the characteristics of specific feature maps on cMesh generation, and offer additional choices of feature maps to yield more effective and efficient generation of cMeshes. We believe that cMeshes with specific and improved feature map generation schemes should be useful in the FEA of bioelectromagnetic problems.

• 대한기계학회논문집B
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• 제40권5호
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• pp.305-311
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• 2016

유도가열은 유도전류를 이용하여 도체에 열을 가하는 방식이다. 유도가열은 열을 가하고자 하는 물체 내부에서 열이 발생하고, 비접촉이며 안전하기 때문에 산업이나 의료분야에서 광범위하게 사용되고 있다. 최근에 형상기억합금을 사용하여 열에 의해 인공치아가 임플란트에서 쉽게 빠질 수 있게 하는 임플란트 시스템이 개발되었다. 본 논문에서는 새로운 임플란트 시스템에서 인공치아를 쉽게 제거할 수 있는 유도가열 장치를 개발하였다. 먼저 전자장-열 구조 유한요소 연성 해석을 통해 다양한 입력 전류와 코일 형상에 대해 온도를 시뮬레이션 상으로 확인해보았다. 해석 결과를 토대로 유도가열장치 시작품을 제작하여 실험을 통해 86초에 인공 치아가 분리됨을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.