• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.652-659
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• 2008

The nonlinear electrical properties and aging characteristics against surge stress of ZPCCL-based varistors were investigated for different sintering temperatures of the range $1240-1300^{\circ}C$. As the sintering temperature increased, the varistor voltage decreased from 732.2 to 53.8 V/mm, the nonlinear exponent decreased from 58.5 to 4.1, and the leakage current increased from $0.38{\mu}A$ to $46.5{\mu}A$. The varistors sintered at $1250^{\circ}C$ and $1260^{\circ}C$ exhibited the high stability against multiple surge, $150A/cm^2(8{\times}20{\mu}s)$. On the whole, the variation rate of electrical characteristics against impulse current stress was gradually increased in order of varistor voltage$\rightarrow$nonlinear exponent$\rightarrow$dissipation facto$\rightarrow$leakage current.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.623-630
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• 1988

As a function of the composition and content of frit, the electrical property of Ag and Ag/Pd thick film conductors were investigated with microstructure. With increasing sintering temperature in Ag-frit thick film conductors, electrical sheet resistivity decreased, but again increased above 80$0^{\circ}C$. And when frit contents is 5wt%, compact and homogenious microstructure can be obtained, then electrical sheet resistivity has minimum value. In Ag/Pd-frit film conductor, the electrical sheet resistivity decreased with increasing sintering temperature. The system which having frit with low softing point has lower sheet resistivity then to add high softening point frit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.9
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• pp.1233-1238
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• 2014

In this thesis, it is investigated the characteristics of Dye Sensitized Solar Cell (DSSC) according to variation of $TiO_2$ thickness (6, 12, 18, and $24{\mu}m$) and three distinct $TiO_2$ sintering temperatures (350, 450 and $550^{\circ}C$) by XRD, SEM, I-V and UV-Vis spectrophotometer. According to sintering temperature, $TiO_2$ was transformed into the anatase structure at $350^{\circ}C$, rutile structure at $550^{\circ}C$ and further into the two structure at $450^{\circ}C$. With increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$, respectively, the irradiance rate increased in the range of 9~26 percent and 2.80~5.10 percent. Whereas a further increase to $24{\mu}m$ and $550^{\circ}C$, the irradiance rate decrease in the range of 4~11 percent and 30~47 percent. The conversion efficiency increased in the range of 2.80~5.01 and 3.03~5.01 with increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$. By contrast, increase to $24{\mu}m$ and $550^{\circ}C$, the conversion efficiency decreased in the range of 3.31~5.01 and 2.80~3.89, respectively. The DSSC that thickness of $TiO_2$ were $18{\mu}m$ and sintered at $450^{\circ}C$ exhibited the most excellent characteristics, in which open-circuit voltage, short-circuit current, Fill Factor and conversion efficiency are 0.69 V, $11.4mA/cm^2$, 0.64 and 5.01%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.381-384
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• 2001

The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.342-346
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• 2012

This work deals with the preparation of dense SiC based ceramics with high electrical conductivity without oxide sintering additives. SiC samples with different content of conductive Ti-NbC phase were hot pressed at $1850^{\circ}C$ for 1 h in Ar atmosphere under mechanical pressure of 30 MPa. The conductive phase is a mixture of Ti-NbC in weight ratio of Ti/NbC 1:4. Composite with 50% of conductive Ti-NbC phase showed the highest electrical conductivity of $30.6{\times}10^3\;S{\cdot}m^{-1}$, while the good mechanical properties of SiC matrix were preserved (fracture toughness 4.5 $MPa{\cdot}m^{1/2}$ and Vickers hardness 18.7 GPa). The obtained results show that use of NbC and Ti as sintering and also electrically conductive additives is appropriate for the preparation of SiC-based composite with sufficient electrical conductivity for electric discharge machining.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.496-500
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• 2017

$Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as $d_{33}=447pC/N$, ${\varepsilon}_r=1,843$, $k_p=0.641$, and $Q_m=1,207$ were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were $720^{\circ}C$ and $920^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.121-124
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• 2009

In this study, in order to develop compositions of ceramics suitable for piezoelectric actuator and ultrasonic vibrator applications using low temperature sintering, multilayer, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$ and $Na_2CO_3$ as sintering aids. Their structural, piezoelectric and dielectric characteristics were investigated according to the Zr/Ti ratio. As the Zr/Ti ratio increased, the electromechanical coupling factor $k_p$, and piezoelectric constant $d_{33}$ and the mechanical quality factor $Q_m$ all increased with Zr/Ti ratio and then decreased after the ratio exceeded 50/50. At the ratio of Zr/Ti =49/51 and sintering temperature of $900^{\circ}C$; the density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$ piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ all showed the optimum values of 7.900 $g/cm^3$, 0.576, 856, 312 pC/N, 1,326, respectively. These property values are very suitable for multilayer ceramics actuator applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.876-881
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• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.