• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• 대한토목학회논문집
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• 제44권1호
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• pp.49-62
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• 2024

급격한 도시화로 인한 지하의 무분별한 개발은 기존 지하매설물의 점검과 교체 그리고 새로운 지하시설물 설치에 지연을 일으키고 있다. 최근에는 체계화된 시스템을 도입하여 지하시설물을 관리하고 있지만, 실제 시공은 현장 여건에 따라서 설계 도면과 다르게 진행되기 때문에 기존 지하매설물의 부정확한 위치 정보로 사고가 끊임없이 발생하고 있다. 한편, 전기비저항 탐사는 전극을 지반에 관입시켜 전극 간 전위차로 지반의 전기저항을 측정하는 방식이며, 비파괴 물리탐사 기법으로서 널리 이용되고 있다. 그리고 다수의 전극 쌍을 이용하여 복잡한 지하 구조를 영상화하고, 딥러닝 알고리즘을 활용한 데이터 해석 기술들이 비약적으로 발전하였지만, 아직 지하매설물의 기하학적 조건에 따른 전기저항 변화를 정량적으로 평가한 기초적인 연구로서는 진행된 바가 없다. 본 연구에서는 전극과 지하매설물의 기하학적 매개 변수 해석을 통해서 전기저항 변화를 평가하였다. 먼저, 이론식과 수치 해석의 전기저항값 차이가 작게 나타난 정량화된 메쉬를 적용하여 3차원 전기저항 수치 해석 모듈을 개발하고, 매설물의 깊이, 크기, 그리고 전극과 매설물 간 이격거리에 따른 매개 변수 해석을 통해서 정상 직류 상태에서 전기저항 변화를 정량적으로 비교하였다. 전기저항은 매설물이 얕은 깊이에 위치하고, 크기가 크고, 전극과의 이격거리가 가까울수록 높게 측정되었다. 추가적으로 전극과 지하매설물 주변에 형성된 전위 및 전류밀도 분포를 분석하여 터미널 전극 주변에서 측정된 전기저항을 고찰하였다.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 폴리머
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• 제26권3호
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• pp.367-374
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• 2002

본 연구에서는 나노 입자의 카본블랙을 결정성 고분자에 분산시켜 특정한 온도에서 저항이 급격하게 증가하는 positive temperature coefficient resistance (PTCR) 특성을 연구하였다. 열가소성 수지를 이용한 PTCR 소재를 열처리에 의하여 고분자의 큐리온도를 조절할 수 있었다. 나노입자 카본블랙이 고분자 구조내에 고르게 분산이 되지 않고, 카본블랙의 함량이 과다하면 negative temperature coefficient resistance (NTCR) 현상이 발생하였다. 카본블랙의 함량과 내부전압을 조절함에 따라 발열 온도를 선정할 수 있었다. 카본블랙의 함량에 따라 전기 전도성이 다르게 나타났으며, 20 wt% 이상에서는 저항이 거의 일정하게 나타난다는 것을 확인하였다. 본 연구에서 제조된 PTCR 소재는 반복적인 가열 냉각에 따른 상온에서의 초기 저항의 변화가 거의 없어 재현성을 확인하였으며, 초기의 낮은 저항에 의한 순간적인 발열에 의하여 저온에서의 PTCR 성능이 향상되었다.

• 조명전기설비학회논문지
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• 제29권6호
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• 한국수소및신에너지학회논문집
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• 제18권3호
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• pp.334-341
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• 2007

Al film(135.5 nm thick) with Pd film(39.6 nm thick) was made by thermal evaporation method. Electrical resistance change by hydrogen absorption and desorption was measured with four point measurement method. Even though Al film(135.5 nm thick) did not absorb any hydrogen at room temperature, Al/Pd film absorbed hydrogen at upto 640 torr pressure. Hydrogen absorption kinetics was monitored by measuring resistance change of the sample in the temperature range from $25^{\circ}C$ to $40^{\circ}C$. Absorption activation energy of Al/Pd film was about 10.7 and 17.7 kcal/mol H for 1st stage and last stage respectively at 1 torr hydrogen pressure. This activation values are bigger than that of Pd film, but are much less than that of Al film. This result indicates there is possibility that Al can be storage material for hydrogen by using Pd film evaporation on it.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.326-331
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• 1990

In the vector-controlled induction machine drive, mechanical sensors restrict the wide applications of high performance AC drives. So in resent years, many papers have been presented which doesn't need mechanical sensors, named by sensorless vector control. But sensorless control has a few serious problem, one of which Is poor speed estimation in case of incorrect rotor resistance (Rr) information. This paper describes the stator flux orientation speed control strategy with the speed estimation algorithm. and the method of adapting Rr change due to thermal heating. By proposed method. We can acquire precise speed estimation and higher performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.35-37
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• 1988

Polycrystalline $Cd_{1-x}Zn_xS$ films were prepared by coaling a slurry which consisted of CdS, ZnS, $CdCl_2$ and propylene glycol on gloss substrates and by sintering in a nitrogen atmosphere. Microstructures, optical transmittance and electrical resistance of the sintered films have been investigatd. Grain shape of $Cd_{1-x}Zn_xS$ films sintered in a sealed boat was nearly spherical but the shape became, irregular when sintered in evaporating condition due to occurrence of CIGM (Chemically Induced Grain-boundary Migration). Controlling the rate of evaporation of $CdCl_2$, sintered $Cd_{1-x}Zn_xS$ films with high optical transmittance and low electrical resistance could be obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.327-330
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• 1999

In this paper, the electrical characteristics of λ vibration-mode piezoelectric transformer for applying to CCFL driving inverter was investigated. Piezoelectric transformer was made of PZT - PMN -0.5wt% N $b_2$ $O_{5}$ composition. As a results of the electrical characteristics of piezoelectric transformer, when applied voltage was 35[ $V_{rms}$] in 100[k$\Omega$] load resistance, output voltage was about 510[ $V_{rms}$] and output power was more than 2[W]. As output power increased, step-up ratio and temperature was very stable until output power was 2.5(W). Also, Efficiency was maximum in 70[k$\Omega$] load resistance, and about 89[%]. Also, when piezoelectric transformer was continuously driven for 10[hrs], output voltage and temperature change ratio was fess than 10[%], and very stable. Conclusively, piezoelectric transformer fabricated in this paper can be applied to piezoelectric inverter for CCFL driving.g.