• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.44 no.1
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• pp.49-62
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• 2024

Reckless development of the underground by rapid urbanization causes inspection delay on replacement of existing structure and installation new facilities. However, frequent accidents occur due to deviation in construction design planned by inaccurate location information of underground structure. Meanwhile, the electrical resistivity survey, knowns as non-destructive method, is based on the difference in the electric potential of electrodes to measure the electrical resistance of ground. This method is significantly advanced with multi-electrode and deep learning for analyzing strata. However, there is no study to quantitatively assess change in electrical resistance according to geometric conditions of structures. This study evaluates changes in electrical resistance through geometric parameters of electrodes and structure. Firstly, electrical resistance numerical module is developed using generalized mesh occurring minimal errors between theoretical and numerical resistance values. Then, changes in resistances are quantitatively compared on geometric parameters including burial depth, diameter of structure, and distance electrode and structure under steady current condition. The results show that higher electrical resistance is measured for shallow depth, larger size, and proximity to the electrode. Additionally, electric potential and current density distributions are analyzed to discuss the measured electrical resistance around the terminal electrode and structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Polymer(Korea)
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• v.26 no.3
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• pp.367-374
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• 2002

Electrical characteristics of crystalline polymer composites filled with nano-sized carbon black particle were studied. The developed composite system exhibited a typical positive temperature coefficient resistance (PTCR) characteristic, where the electrical resistance sharply increased at a specific temperature. The PTCR effect was sometimes followed by a negative temperature coefficient resistance (NTCR) feature with temperature, which seemingly caused by the coagulation of nano-sized carbon black particles in the excessive quantity. The PTCR temperature was controlled by the carbon black content and the external voltage. The change of electric conductivity was shown as a function of carbon black content, and the resistance was constant when the carbon black content was over 20 wt%. The room-temperature resistance was maintained by a repeated heating and cooling. The excellent PTCR characteristic was demonstrated by the low resistance in the initial stage and the instantaneous heating capability.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• Transactions of the Korean hydrogen and new energy society
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• v.18 no.3
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• pp.334-341
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• 2007

Al film(135.5 nm thick) with Pd film(39.6 nm thick) was made by thermal evaporation method. Electrical resistance change by hydrogen absorption and desorption was measured with four point measurement method. Even though Al film(135.5 nm thick) did not absorb any hydrogen at room temperature, Al/Pd film absorbed hydrogen at upto 640 torr pressure. Hydrogen absorption kinetics was monitored by measuring resistance change of the sample in the temperature range from $25^{\circ}C$ to $40^{\circ}C$. Absorption activation energy of Al/Pd film was about 10.7 and 17.7 kcal/mol H for 1st stage and last stage respectively at 1 torr hydrogen pressure. This activation values are bigger than that of Pd film, but are much less than that of Al film. This result indicates there is possibility that Al can be storage material for hydrogen by using Pd film evaporation on it.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.326-331
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• 1990

In the vector-controlled induction machine drive, mechanical sensors restrict the wide applications of high performance AC drives. So in resent years, many papers have been presented which doesn't need mechanical sensors, named by sensorless vector control. But sensorless control has a few serious problem, one of which Is poor speed estimation in case of incorrect rotor resistance (Rr) information. This paper describes the stator flux orientation speed control strategy with the speed estimation algorithm. and the method of adapting Rr change due to thermal heating. By proposed method. We can acquire precise speed estimation and higher performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.35-37
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• 1988

Polycrystalline $Cd_{1-x}Zn_xS$ films were prepared by coaling a slurry which consisted of CdS, ZnS, $CdCl_2$ and propylene glycol on gloss substrates and by sintering in a nitrogen atmosphere. Microstructures, optical transmittance and electrical resistance of the sintered films have been investigatd. Grain shape of $Cd_{1-x}Zn_xS$ films sintered in a sealed boat was nearly spherical but the shape became, irregular when sintered in evaporating condition due to occurrence of CIGM (Chemically Induced Grain-boundary Migration). Controlling the rate of evaporation of $CdCl_2$, sintered $Cd_{1-x}Zn_xS$ films with high optical transmittance and low electrical resistance could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.327-330
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• 1999

In this paper, the electrical characteristics of λ vibration-mode piezoelectric transformer for applying to CCFL driving inverter was investigated. Piezoelectric transformer was made of PZT - PMN -0.5wt% N $b_2$ $O_{5}$ composition. As a results of the electrical characteristics of piezoelectric transformer, when applied voltage was 35[ $V_{rms}$] in 100[k$\Omega$] load resistance, output voltage was about 510[ $V_{rms}$] and output power was more than 2[W]. As output power increased, step-up ratio and temperature was very stable until output power was 2.5(W). Also, Efficiency was maximum in 70[k$\Omega$] load resistance, and about 89[%]. Also, when piezoelectric transformer was continuously driven for 10[hrs], output voltage and temperature change ratio was fess than 10[%], and very stable. Conclusively, piezoelectric transformer fabricated in this paper can be applied to piezoelectric inverter for CCFL driving.g.