• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.3
• /
• pp.201-206
• /
• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.12
• /
• pp.3731-3739
• /
• 2009

One-chambered sediment cells with a variety of anodic electrodes were tested for generation of electricity. Material used for anodes was iron, brass, zinc/iron, copper and graphite felt which was used for a common cathode. The estuarine sediment served as supplier of oxidants or electron-producing microbial habitat which evoked electrons via fast metal corrosion reactions or a complicated microbial electron transfer mechanism, respectively. Maximum power density and current density were found to be $6.90\;W/m^2$ (iron/zinc) and $7.76\;A/m^2$ (iron), respectively. Interestingly, copper wrapped with carbon cloth produced better electric performance than copper only, by 60%, possibly because the cloth not only prevented rapid corrosion on the copper surface by some degrees, but also helped growing some electron-emitting microbes on its surface. At anodes oxidation reduction potential(ORP) was kept to be stationary over time except at the very initial period. The pH reduction in the copper and copper/carbon electrodes could be a sign of organic acid production due to a chemical change in the sediment. The simple estimation of interfacial, electrical resistances of electrodes and electrolyte in the sediment cell that a key to the electricity generation should be in how to control corrosion rate or microbial electron transfer activity.

• Journal of the Society of Disaster Information
• /
• v.13 no.3
• /
• pp.305-312
• /
• 2017

In our society, the advanced, advanced, and information industries have continued to grow and now live in the era of the fourth industrial revolution. As the industry develops, the load of the users has also increased so much that it is deepened by the energy shortage phenomenon and the construction of additional energy facilities is required. Therefore, energy plant construction work is being actively carried out in the coastal area. In particular, it is common to build a plant in the ground by filling the coast with soil in other regions, reflecting the fact that Korea is lacking in the country when constructing power plants, gas and petrochemical plants. Current domestic grounding designs are designed or constructed to suit only the use of grounding resistors based on the electrical equipment design technical standards. However, in the case of a plant facility constructed in the untested buried soil, when the lightning current and the abnormal current are inputted, the facility operator or the user due to the elevation of the ground potential is seriously exposed to the risk of electric shock disaster. In this paper, we analyze the ground resistivity of the landfilled soil and use a computer program (CDEGS) based on KS C IEC 61936-1, We analyze the contact voltage and stratification voltage and propose a grounding design optimized for plant installation.

• Carbon letters
• /
• v.10 no.3
• /
• pp.177-180
• /
• 2009

The importance of nanopore structures of carbons is shown in terms of interaction potential for various molecules including supercritical gases such as $H_2$ and $CH_4$. The key factors for adsorption of supercritical $H_2$ and $CH_4$ are shown for single wall carbon nanohorn, single wall carbon nanotube, and double wall carbon nanotube. The cluster formation of molecules is a key process for water adsorption on hydrophobic carbon nanopores. The X-ray absorption spectroscopic examination elucidates an explicit dehydration structure of ions confined in carbon nanopores.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.335-335
• /
• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.39 no.9
• /
• pp.859-869
• /
• 2015

In this study, we analyze the problem of wedge cracks, which are geometrically unsymmetrical in transversely piezoelectric materials. A single concentrated antiplane mechanical load and inplane electrical load are applied at the point of the wedge surface, while one concentrated antiplane load is applied at the crack surface. The crack surfaces are considered as permeable thin slits, where both the normal component of electric displacement and the electric potential are assumed to be continuous across these slits. Using Mellin transform method, the problem is formulated and the Wiener-Hopf equation is derived. By solving the equation, the solution is obtained in a closed form. The intensity factors of the stress and the electric displacement are obtained for any crack length as well as inclined and wedge angles. Based on the results, the intensity factors are independent of the applied electric loads. The electric displacement intensity factor is always dependent on that of stress intensity factor, while the electric field intensity factor is zero. In addition, the energy release rate is computed. These solutions can be used as fundamental solutions which can be superposed to arbitrary electromechanical loadings.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.391-392
• /
• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.84.2-84.2
• /
• 2010

PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active components in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT, which are printed with functional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manufacturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem: it is difficult to apply toa continuous process as a R2R printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, anelectrostatic atomizer sprays micro-drops from the solution injected into the capillary, with electrostatic force generated by electric potential of about tens of kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and Active layer which consist of the P3HT:PCBM. The result of experiment, organic solar cell using ESD thin film coated method is occurred efficiency of about 1.4%. Also, the case of only used to ESD method in the active layer coating is occurred efficiency of about 1.86% as the applying a spin coating in the PEDOT:PSS layer. We can expect that ESD method is possible for continuous process to manufacture in the organic solar cell or OLED device.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.1
• /
• pp.23-26
• /
• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.4
• /
• pp.483-491
• /
• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.