• 전기학회논문지
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• 제56권5호
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• pp.938-943
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• 2007

In this paper, we show that, in case of piezoelectric micropower generator, just replacing Schottky diodes in the bridge rectifier with ultra-low reverse leakage current diodes improves the mechanical-to-electrical energy conversion efficiency by more than 100%. Experimental and PSPICE simulation results show that, due to the ultra-low leakage current, the charging speed of the circuit employing PAD1 is higher than that of the circuit employing Schottky diodes and the saturation voltage of the circuit employing PAD1 is also higher. This study suggests that , when the internal impedance of source is very large (a few tens of $M{\Omega}$) such that maximum charging current is a few microamperes or less, in order to realize literally the energy scavenging system, ultra-low reverse leakage current diodes should be used for efficient energy conversion. Since low-level vibration is ubiquitous in the environment ranging from human movement to large infrastructures and the mechanical-to-electrical energy conversion efficiency is much more critical for use of these vibrations, we believe that the improvement in the efficiency using ultra-low leakage diodes, as found in this work, will widen greatly the application of piezoelectric micropower generator.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.190-194
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• 2017

Present-day solar panels incorporate inverters as their core components. Switching devices driven by specialized power controllers are operated in a transformerless inverter topology. However, some challenges associated with this configuration include the absence of isolation, causing leakage currents to flow through various components toward ground. This inevitably causes power losses, often being also the primary reason for the power inverters' analog equipment failure. In this paper, various aspects of the leakage currents are studied using different circuit analysis methods. The primary objective is to convert the leakage current energy into a usable DC voltage source. The research is focused on harvesting the leakage currents for producing circa 1.1 V, derived from recently developed rectifier circuits, and driving a $200{\Omega}$ load with a power in the milliwatt range. Even though the output voltage level is low, the harvested power could be used for charging small batteries or capacitors, even driving light loads.

• Journal of Power Electronics
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• 제16권3호
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• pp.970-981
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• 2016

Leakage currents occur in pulse-width-modulated voltage source inverter (PWM-VSI)-fed permanent magnet synchronous motor (PMSM) drives for air-conditioners, which seriously affect system safety and operation performance. High accuracy modeling and prediction of leakage currents are key issues for the design and implementation of air-conditioning products. In this study, the generation mechanism of leakage currents is discussed. A systematic modeling approach of leakage currents is proposed, including the modeling of leakage current sources and leakage current paths. By using the proposed approach, the complete model of leakage currents in PWM-VSI-fed PMSM drives for air-conditioners has been developed based on the extraction of all parameters. A comparison between the simulated leakage currents based on the developed model and measured leakage currents in the outdoor unit of an air-conditioning product is conducted. The comparison verifies the effectiveness of the proposed modeling approach, and the developed model exhibits high accuracy within a wide frequency range.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.500-504
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• 2004

We propose a new method to reduce the subthreshold leakage current. By moving the operating point of OFF state MOSFETs through input-controlled voltage generators, logic circuits with much lower leakage current can be built with few extra components. SPICE simulation results for the new inverter show correct logic results without speed degradation compared to a conventional inverter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.379-382
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• 2002

GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.148-148
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• 2009

In order to investigate the quality in compliance with an electric leakage electric current from the electric leakage area after conferring the electric leakage environment in compliance with a flooding when the electric leakage electric current exists in the surface, it investigated the electric leakage electric current quality from the electric current distribution and flooded districts from the present paper. At the result, we have known that flux density is constant regardless of distance variation.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권4호
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• pp.215-220
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• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• 한국조명전기설비학회지:조명전기설비
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• 제6권3호
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• pp.50-56
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• 1992

The coupling coefficient K controls the characteristic behaviors of leakage transformer. The value of coupling coefficient K was obtained from th leakage flux of leakage transformer an ascertained from the variation due to the function of current. Therefore, this paper presented the equivalent circuit of leakage transformer consisting of Thevenin's constant voltage source and inductor as (1-K2)L2 which were proportional to parameter K. The proposed equivalent circuit verified the validity in designing the leakage transformer because it was in good agreements of the behaviors of ideal transformer (K is 1), leakage transformer (K is 0$\leq$K$\leq$1), inductor (K is 0).