• Proceedings of the KIEE Conference
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1774-1777
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• 1996

In this paper, applicability of SI-PD(switching impulse - partial discharge) testing method was put on an attempt as a newly proposed diagnostic method for the underground distribution power cable system in Korea. For this purpose, SI-PD testing equipment was designed, and tests were performed using artificial needle-type defects integrated into the 22.9 kV CN/CV cables in drder to prove its reliability. As a result, arc noises, generated from spark gap, were considerably decreased by use of a pneumatic switch immersed into oil, and artificial needle-type defects were well detected with impulse voltage level under $2U_0$. These results imply that it is likely possible to apply SI-PD measurement method as a the nondistructive test for the 22.9 kV CN/CV cable system in Korea.

• Proceedings of the KIEE Conference
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.482-484
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• 1995

In designing three phase enclosure type EHV class gas insulated bus (GIB), it is essential to estimate the magnitude and the position where the maximum electric field strength occur. The improvement of insulation design can only be initiated after those informations have been obtained. In this paper, the calculated electric field strength for three phase GIB of HICO 362kV 63kA GIS is presented. The result shows that the designed insulator has enough margin compared with the design criteria.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.317-327
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• 2014

In order to develop nano-devices with much lower power consumption for beyond-CMOS applications, the fundamental understanding and precise control of the electronic properties of ultrathin transition metal oxide (TMO) films are strongly required. The metal-insulator transition (MIT) is not only an important issue in solid state physics, but also a useful phenomenon for device applications like switching or memory devices. For potential use in such application, the electronic structures of MIT, observed for TMO nano-structures, have been investigated using a synchrotron radiation angle-resolved photoelectron spectroscopy system combined with a laser molecular beam epitaxy chamber and a scanning photoelectron microscopy system with 70 nm spatial resolution. In this review article, electronic structures revealed by soft X-ray nano-spectroscopy are presented for i) polarity-dependent MIT and thickness-dependent MIT of TMO ultrathin films of $LaAlO_3/SrTiO_3$ and $SrVO_3/SrTiO_3$, respectively, and ii) electric field-induced MIT of TMO nano-structures showing resistance switching behaviors due to interfacial redox reactions and/or filamentary path formation. These electronic structures have been successfully correlated with the electrical properties of nano-structured films and nano-devices.

• 전기의세계
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• 제26권6호
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• pp.78-85
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• 1977

This paper studies flashover voltage and surface corona loss of A.C and D.C in the mixed gas of air and SF$_{6}$ for solid insulators P.V.C, arcylic, glass and bakelite in two cases. In one case, those solids are covered with transformer oil and the other case, those solids are not covered with it. 1) The flashover voltage for each solids in SF$_{6}$ is more than three times compared with that in the air. The flashover voltage for P.V.C is the highest and then arcylic, glass, bakelite in a decreasing order. 2) The more the amount of SF$_{6}$ in the mixing ratio, the less corona loss. The P.V.C shows the least amount of corona loss and the bakelite the largest. 3) Compared with the corona loss of positive polarity and the negative polarity, the former has less corona loss than the latter. 4) The more the number of flashover discharge, the less insulation of each solids, but in case of bakelite, insulation almost vanishes after a couple of discharge. 5) When each insulator is covered with transformer oil, the flashover voltage generally increases and the corona loss decreases.eases.

• Applied Microscopy
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• 제42권4호
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• Journal of Korean Society of Water and Wastewater
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• 제27권2호
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• pp.241-249
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• 2013

Ethanolamine (ETA) is widely used for alkalinization of water in steam cycles of nuclear power plants with pressurized water reactor. When ETA contained wastewater was released, it could increase COD and T-N. The treatment of the COD and T-N from ETA wastewater was investigated using the GAC as particle electrodes in three-dimensional electrode reactor (TDE). This study evaluated the effectiveness of GAC as particle electrode using different packing ratio at 300 V. The results showed that GAC-TDE could reduce ETA much more efficiently than ZVI-TDE at the mass ratio of GAC to insulator, 1:2. Additionally, The effect of applied electric potential to COD and T-N reduction was investigated. The results showed the high COD, T-N reduction and current efficiency at the low electric potential. Using the GAC-TDE will provide a better ETA reduction with reducing electrical potential dissipation.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Korean Journal of Materials Research
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• 제14권6호
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1853-1855
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• 2000

An experimental investigation has been performed in order to understand the $\Phi$-q-n characteristics related to the PD taking place from the various size of artificial defects inserted in epoxy insulation. In this purpose, PD has been detected simultaneously by two different methods such as commercialized PD detector(TE571) and our detection system using self designed CT type sensor. Under the presence of void in epoxy insulation, PD has been initiated at the voltages between 16kV and 20kV which are much lower than the dielectric strength of epoxy insulation (130kV/mm$\sim$l50kV/mm). And also it is revealed that $\Phi$-q-n characteristics have been observed to be dependent upon the size of the artificial defects. Throughout this work, the on site applicability of the self designed Sensor has also been proved by comparing the results with those from the commercialized PD detector. And more one, considerable basic data regarding the insulation, diagnosis could be provided to understand the presence of the voids possibly inserted into the epoxy insulation system of the power apparatus.

• Proceedings of the KIEE Conference
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.