• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Journal of the Korean institute of surface engineering
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• v.25 no.6
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• pp.309-317
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• 1992

Evaluation of electroplated gold has been carried out to obtain the data base for electrical, mechanical and environmental properties for telecommunication component applications. Gold plating was performed to a various thickness of $0.1\mu\textrm{m}$ to 1.$25\mu\textrm{m}$ after Ni plating of $3\mu\textrm{m}$ on C52100 bronze. Electrical properties were evaluated by measuring contact resistance using 4-wire method under static contact and dynamic contact during wear. Reciprocating wear test was performed to study the wear behavior as well as failure of gold contacts. Environmental characteristics were evaluated by using salt spray testing and SO2 test. Hardness of soft gold film was measured to be 53KHN under 5g load. Friction coefficient was initially obtained to be 0.15 and 0.25 under 100g and 200g loads respectively, and then raised up to 0.8 with increasing reciprocating wear cycles. Static contact resistance was 2 to 3m$\Omega$ regardless of gold film thickness while drastic changes of contact resistance were occured upon stripping of the gold film during wear. The lifetime of contact wear showing stable contact resistance increased up to 6 times for $1\mu\textrm{m}$ thickness compared to that of$ 0.1\mu\textrm{m}$ thickness under 100g load. All gold plating appeared to be stable under salt atmosphere while only the gold plating over 1$\mu\textrm{m}$ was stable under SO2 atmosphere.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.4
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• pp.172-181
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• 2024

In this study, the effect of addition of Ti and Co elements on microstructural evolution and characteristics of vacuum-casted Cu-25%Cr electrical contact material was investigated. The coarse and insoluble Cr phases with an average size of 300 ㎛ in commercial Cu-25%Cr alloy were reduced to tens of micrometers in vacuum casted Cu-25%Cr-X(X=Ti, Co) alloy, which can be interpreted as result controlling coarsening and the work-frame structure of the insoluble Cr phase by the formation of intermetallic compounds such as Cr₂Ti or Cr_0.5Co_1.5Ti around the Cr phase As a result, the electrical properties such as weight loss and fusion resistance against the repeated arc generation of the electrical contact material as well as the mechanical properties were greatly improved.

• Journal of IKEEE
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• v.25 no.3
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• pp.467-472
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• 2021

Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.90.2-90.2
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• 2010

The coated metallic bipolar plates are getting attractive due to their good feasibility of mass production, low contact resistance, high electrical/thermal conductivity, low gas permeability and good mechanical strength comparing with graphite materials. Yet, metallic bipolar plates for polymer electrolyte membrane(PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance between metallic bipolar plate and gas diffusion layer, good mechanical robustness, low mechanical and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrate by electroplating. The coated metallic bipolar plates are investigated with an electrochemical polarization tests, salt dipping tests, adhesion tests for corrosion resistance and then the contact resistance was measured. The results showed that the selective samples electroplated with optimized method, satisfied the DOE target for corrosion resistance and contact resistance, and also were very stabilized in the typical fuel cell environments in the long-term.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1361-1366
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• 2008

Failure mechanism of the poor contact is analyzed on the basis of used connectors and this poor contact of connectors is reappeared by the new forced fretting wear method. As the result of failure analysis and reappearance, fretting wear and corrosion of the contact interface causes the contact resistance degradation and the poor contact of connectors. The amount of degradation depends on the fretting stroke. Changes in contact resistance of static contacts are likely to be small and gradual, while motions of contact interface may result in larger and discontinuous changes in resistance and voltage. This voltage drop by fretting motions is large enough to cause the distortion of sensor signal and mis-working of electric components.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.06a
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• pp.76-83
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• 2000

Boundary lubrication condition arises in most lubricated systems, especially during motion reversals and start up phase of operation. In this work electric contact resistance variations with respect to sliding conditions under lubrication is investigated The motivation was to improve the understanding of the contact condition in the boundary lubrication regime. It is shown that electrical contact resistance is sensitive to sliding speed and surface condition of the specimens. Also, phenomena such as run-in during the initial phase of sliding and lubricant pile up near the sliding pin could be observed. The results of this work will aid in better understanding of the metal to metal contact condition in lubricated systems.

• Tribology and Lubricants
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• v.16 no.5
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• pp.381-388
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• 2000

Boundary lubrication condition arises in most lubricated systems, especially during motion reversals and start up phase of operation. In this work electric contact resistance variations with respect to sliding conditions under lubrication is investigated. The motivation was to improve the understanding of the contact condition in the boundary lubrication regime. It is shown that electrical contact resistance is sensitive to sliding speed and surface condition of the specimens. Also, phenomena such as run-in during the initial phase of sliding and lubricant pile up near the sliding pin could be observed. The results of this work will aid in better understanding of the metal to metal contact condition in lubricated systems.