• 센서학회지
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• 제23권4호
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• pp.266-271
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• 2014

Chemical sensors are used in various industrial facilities such high-risk and prevent the leakage of substances, important in life and environmental protection and the safe use of industry, used for management. In particular, high-temperature environments such as power generation equipment of the rotating part due to leakage generated by the various oil, power plants Shut Down, fire, work environment (exposure to various chemical solution and gas leak) and various water, air and soil pollution causes. Thus, over the long term through various channels such as crops and groundwater contamination caused by the slow, serious adverse effect on the ecosystem. In this paper, synthetic lube oil and high pressure hydraulic fluid leakage and immediately detect a new Printed Electronic implementation of technology-based film-type sensors, and its performance test. Thus, industrial accidents and environmental pollution and for early detection of problems, large accidents can be prevented. Experimental results of the synthetic lube oil and high pressure hydraulic fluid solution after the contact time depending on the experiment and the oil solution of the sensor material of the conductive porous PE resistance value by a chemical reaction could be confirmed that rapid increase. Also implemented in the film-type oil sensor electrical resistance change over time of the reaction rate and the synthetic lube oil is about 2 minutes or less, the high pressure hydraulic fluid is less than about 1 minute was. Therefore, more high-pressure hydraulic fluid such as a low volatility synthetic lube oils are the resistance change and the reaction rate was confirmed to be the slowest.

• 마이크로전자및패키징학회지
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• 제22권1호
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• pp.35-41
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• 2015

In this study, in order to improve the reliability of ACF interconnections, solder ACF joints were investigated interms of solder joint morphology and solder wetting areas, and evaluated the electrical properties of Flex-on-Board (FOB) interconncections. Solder ACF joints with the ultrasonic bonding method showed excellent solder wetting by broken solder oxide layers on solder surfaces compared with solder joints with remaining solder oxide layer bonded by the conventional thermo-compression (TC) bonding method. When higher target temperature was used, Sn58Bi solder joints showed concave shape due to lower degree of cure of resin at solder MP by higher heating rate. ACFs with epoxy resins and SAC305 solders showed lower degree of resin cure at solder MP due to the slow curing rate resulting in concave shaped solder joints. In terms of solder wetting area, solder ACFs with $25-32{\mu}m$ diameters and 30-40 wt% showed highest wetted solder areas. Solder ACF joints with the concave shape and the highest wetting area showed lower contact resistances and higher reliability in PCT results than conventional ACF joints. These results indicate that solder morphologies and wetting areas of solder ACF joints can be controlled by adjustment of bonding conditions and material properties of solder and polymer resin to improve reliability of ACF joints.

• International Journal of Precision Engineering and Manufacturing
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• 제9권1호
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• pp.39-46
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• 2008

The end plates of fuel cell assemblies are used to fasten the inner stacks, reduce the contact pressure, and provide a seal between Membrane-Electrode Assemblies (MEAs). They therefore require sufficient mechanical strength to withstand the tightening pressure, light weight to obtain high energy densities, and stable chemical/electrochemical properties, as well as provide electrical insulation. The design criteria for end plates can be divided into three parts: the material, connecting method, and shape. In the past, end plates were made from metals such as aluminum, titanium, and stainless steel alloys, but due to corrosion problems, thermal losses, and their excessive weight, alternative materials such as plastics have been considered. Composite materials consisting of combinations of two or more materials have also been proposed for end plates to enhance their mechanical strength. Tie-rods have been traditionally used to connect end plates, but since the number of connecting parts has increased, resulting in assembly difficulties, new types of connectors have been contemplated. Ideas such as adding reinforcement or flat plates, or using bands or boxes to replace tie-rods have been proposed. Typical end plates are rectangular or cylindrical solid plates. To minimize the weight and provide a uniform pressure distribution, new concepts such as ribbed-, bomb-, or bow-shaped plates have been considered. Even though end plates were not an issue in fuel cell system designs in the past, they now provide a great challenge for designers. Changes in the materials, connecting methods, and shapes of an end plate allow us to achieve lighter, stronger end plates, resulting in more efficient fuel cell systems.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• 대한전자공학회논문지TC
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• 제48권9호
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• pp.47-53
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• 2011

본 논문에서는 커넥터의 특성임피던스 추출, 분석 방법 및 설계 변경 방법을 제안하고 임피던스를 정합하여 신호 전달 특성을 개선한다. 3차원 FEM(Finite Element Method) 전자기장(Electro-Magnetic Field) 시뮬레이터를 이용하여 커넥터의 S-파라미터를 계산하고 반사손실 및 삽입손실을 추출한다. 커넥터의 신호 전달 특성은 반사손실이 0.9 GHz 이후부터 -20 dB 이상의 값으로 높게 나타났다. 신호 전달 특성이 낮은 원인을 파악하기 위해서 회로 해석 시뮬레이터를 이용하여 커넥터의 등가 회로 모델을 추출하고 특성임피던스를 계산하였다. 커넥터의 특성임피던스는 $90.3{\Omega}$으로 임피던스 부정합이 발생하여 신호 전달 특성이 저하되었다. 따라서 신호 전달 특성을 개선할 목적으로 임피던스를 정합하기 위해서 커넥터의 커패시턴스를 증가시켰다. 이러한 설계 방안으로 커넥터 신호선의 유효 면적을 확장하고, 커넥터의 몸체 소재로 고유전체를 사용하였다. 설계 변경된 커넥터의 특성임피던스는 $58.6{\Omega}$으로 임피던스 정합에 보다 근접하여 커넥터의 반사손실이 대략 10 dB 향상되었다. 신호선의 유효 면적 증가에 의한 반사손실 개선과 고유전체의 적용으로 전자기파의 신호선 주변 집중에 의해서 삽입손실 또한 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Journal of Electrochemical Science and Technology
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• 제12권4호
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• pp.458-464
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• 2021

Lithium ion batteries (LIBs) is a kind of rechargeable secondary battery, developed from lithium battery, lithium ions move between the positive and negative electrodes to realize the charging and discharging of external circuits. Zeolitic imidazolate frameworks (ZIFs) are porous crystalline materials in which organic imidazole esters are cross-linked to transition metals to form a framework structure. In this article, ZIF-67 is used as a sacrificial template to prepare nano porous carbon (NPC) coated cobalt nanoparticles. The final product Co/NPC composites with complete structure, regular morphology and uniform size were obtained by this method. The conductive network of cobalt and nitrogen doped carbon can shorten the lithium ion transport path and present high conductivity. In addition, amorphous carbon has more pores that can be fully in contact with the electrolyte during charging and discharging. At the same time, it also reduces the volume expansion during the cycle and slows down the rate of capacity attenuation caused by structure collapse. Co/NPC composites first discharge specific capacity up to 3115 mA h/g, under the current density of 200 mA/g, circular 200 reversible capacity as high as 751.1 mA h/g, and the excellent rate and resistance performance. The experimental results show that the Co/NPC composite material improves the electrical conductivity and electrochemical properties of the electrode. The cobalt based ZIF-67 as the precursor has opened the way for the design of highly performance electrodes for energy storage and electrochemical catalysis.

• 한국재료학회지
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• 제19권1호
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.