Applied Science and Convergence Technology

한국진공학회 (The Korean Vacuum Society)
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Fabrication of Two-dimensional MoS2 Films-based Field Effect Transistor for High Mobility Electronic Device Application

  • Joung, DaeHwa (Center for Vacuum Technology, Korea Research Institute of Standards and Science) ;
  • Park, Hyeji (Center for Vacuum Technology, Korea Research Institute of Standards and Science) ;
  • Mun, Jihun (Center for Vacuum Technology, Korea Research Institute of Standards and Science) ;
  • Park, Jonghoo (Department of Electrical Engineering, Kyungpook National University) ;
  • Kang, Sang-Woo (Center for Vacuum Technology, Korea Research Institute of Standards and Science) ;
  • Kim, TaeWan (Center for Vacuum Technology, Korea Research Institute of Standards and Science)
  • 투고 : 2017.09.04
  • 심사 : 2017.09.21
  • 발행 : 2017.09.30
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초록

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

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참고문헌

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