• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.561-565
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• 2007

Because of a good wear resistance and a stable contact resistance, Ag-CdO is widely used as electrical contact material. But, the Cd-oxide mainly exists as a coarse particle and adversely affected to environment. As a reason, $Ag-SnO_2$ alloy has been developed. The Sn-oxide maintains stable and fine particle even at high temperature. In order to investigate the effect of Misch metal (Mm) additional that affects the formation of the oxide and the formation of fine matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Mm) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. The Mm addition makes Ag matrix more fine than no Mm addition. The reason is that the addition of Misch metal decreased a latent heat of fusion of alloy, as a result the rapid solidification effect of alloy is increased. The maximum hardness shows at 0.3 wt%Mm. after that the hardness is decreased until 0.4 wt% Mm, but still larger than no Mm addition alloy. At 0.5 wt% Mm alloy, the precipitation of Misch metal causes a decrease of hardness than no Mm addition alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.46-51
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• 2006

This paper reports on the effects of silicone oils, used as processing agents, on the recovery of hydrophobicity of silicone rubber. The recovery of hydrophobicity was evaluated by the measuring the contact angle, the surface electrical resistance and SEM. Here, we formed artificial contamination on the surface of samples, which scratched by sand papers and alumina powders. There was small recovery of hydrophobicity on the surface of SIR-A that silicone oil was not added. In both oil-added samples, SIR-B and SIR-C, recovery of hydrophobicity was achieved greatly. The surface of SIR-C showed that a lot of silicone oil was observed due to migration of oil, relatively in comparison with SIR-B. The tendency of recovery of hydrophobicity expressed by contact angle was in a good agreement with electrical property as determined by surface resistivity.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.601-602
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• 2005

In the cold and temperate regions of Korea the icing and ice coats on 25 kV overhead contact wire during winter is a very serious problem. This generates shocks at the mechanical interface of the collecting strips of the pantograph and the contact wire and extra electrical resistance, which may affect quality of current collection at the contact wire / collecting strips of pantograph interface. De-icing operations should be performed just before train operation to avoid the formation of another ice layer. This paper presents temperature analysis of the de-icing system which could be applied to the overhead contact wire of railways.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.63-67
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• 2021

In this paper, we investigated the surface properties of polymer insulators to improve electrical insulation performance. First, after washing the polymer insulator in various ways, its contact angle was increased, thereby improving the hydrophobic properties and electrical insulation properties. In addition, TiO2 thin films, which have been used as a photocatalytic material and have been applied to the polymer insulator surface of to enhance the surface and electrical insulating properties. For the sputtering method, the contact angle after coating the TiO2 thin film increased with increasing RF power, but it was lower compared to that before coating, indicating that the hydrophobic properties of the surface were slightly deteriorated. Consequently, the electrical properties of the polymer-insulating material were maintained or improved after the TiO2 thin-film coating.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.179-180
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• 2007

반도체의 최소 회로 선폭이 감소함에 따라 Contact 저항이 크게 증가하게 된다. Contact 저항을 낮추기 위하여 Tungsten Metal Contact을 일반적으로 사용하며, Si 기판과의 Ohmic 접촉 및 WF6의 Fluorine과 Si 반응을 억제하기 위한 Barrier Metal로 Ti/TiN 이중막을 사용한다. 본 논문에서는 90nm급 이하 제품의 CVD Ti/TiN Barrier Metal이 유발하는 불량 현상과 원인 규명에 대하여 연구하였으며, Ohmic Contact형성을 위해 TiSix형성 최적화 방안에 대해 정리하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.864-869
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• 2009

The measurement of contact wire uplift in electric railways is one of the most important test parameters to accepting the maximum permitted speed of new electric vehicles and pantographs. The contact wire uplift can be measured over short periods when the pantograph passes monitoring stations. In this paper, a high-speed image measurement system and its image processing method are being developed to evaluate dynamic uplift of overhead contact wires caused by pantograph contact forces of Korea Tilting Train eXpress (TTX) and Korea Train eXpress (KTX). The image measurement system was implemented utilizing a high-speed CMOS (Complementary Metal Oxide Semiconductor) camera and gigabit ethernet LAN. Unlike previous systems, the uplift measurement system using high speed camera is installed on the side of the rail, making maintenance convenient. On-field verification of the uplift measurement system for overhead contact wire using high speed camera was conducted by measuring uplift of the TTX followed by operation speeds at the Honam conventional line and high-speed railway line. The proposed high-speed image measurement system to evaluate dynamic uplift of overhead contact wires shows promising on-field applications for high speed trains such as KTX and TTX.