• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.215-217
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• 2016

For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around $300^{\circ}C$ for 10 minutes with different gas ambient, such as $O_2$, $N_2$, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle ($8.9^{\circ}$) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.78-84
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• 2005

Standard crystalline solar cells are generally fabricated with the front grid pattern of silver paste contact. We have reported a detailed theoretical analysis of the proposed segmented cross grid line pattern in this paper. This work was carried out for the optimization of spacing and width of grid finger, main busbar and sub-busbar. The overall electrical and optical losses due to front contact were brought down to $10\%$ or even less as compared to the usual loss of $15\%$ or more in the conventional screen printed silver paste technology by choosing proper grid pattern and optimizing the grid parameters. The total normalized power loss for segmented mesh grid with plated metal contact was also observed and the total power loss could be brought down to $10.04\%$ unlike $11.57\%$ in the case of continuous grid and plated contact. This paper is able to outline the limitations of conventional screen printed contact.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.154-155
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• 2007

PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material and presented the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. In this letter, we expect the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode to decrease writing current.

• 한국주조공학회지
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• 제26권2호
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• pp.92-97
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• 2006

Contact material is widely used as electrical parts. Ag-Cd alloy has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. To solve the disadvantages of that, Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to optimize Sn amount that affects the formation of the oxide layer on the surface, we worked for the microstructures and properties of Ag-Sn material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. We have shown that the optimized Sn amount for high hardness is 7.09 wt%Sn. Surface oxide layer forms when Sn amount is over 9.45 wt%. The size of Sn oxide is 20 nm.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.895-900
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• 1997

A Quench in cable-in-conduit (CIC) conductors is often initiated by a disturbance such as strand motion that generates a highly localized normal zone in a strand or a few strands of the CIC conductors. The localized normal zone causes current and heat transfer between a disturbed strand and neighboring strands. Electrical and thermal contact characteristics between strands thus have an effect on the transient stability of the CIC conductors. In this paper the effect of contact characteristics between strands on the CIC conductor stability is presented based on the measured heat transfer characteristics of supercritical helium (SHe) for the local heating. The quench and recovery processes of the strands for the abrupt and highly localized disturbance are analyzed at the boundary between quench and recovery.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.238.2-238.2
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• 2011

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,