• Title/Summary/Keyword: Electrical contact material

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Fuel Cell End Plates: A review

  • Kim, Ji-Seok;Park, Jeong-Bin;Kim, Yun-Mi;Ahn, Sung-Hoon;Sun, Hee-Young;Kim, Kyung-Hoon;Song, Tae-Won
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.1
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    • pp.39-46
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    • 2008
  • The end plates of fuel cell assemblies are used to fasten the inner stacks, reduce the contact pressure, and provide a seal between Membrane-Electrode Assemblies (MEAs). They therefore require sufficient mechanical strength to withstand the tightening pressure, light weight to obtain high energy densities, and stable chemical/electrochemical properties, as well as provide electrical insulation. The design criteria for end plates can be divided into three parts: the material, connecting method, and shape. In the past, end plates were made from metals such as aluminum, titanium, and stainless steel alloys, but due to corrosion problems, thermal losses, and their excessive weight, alternative materials such as plastics have been considered. Composite materials consisting of combinations of two or more materials have also been proposed for end plates to enhance their mechanical strength. Tie-rods have been traditionally used to connect end plates, but since the number of connecting parts has increased, resulting in assembly difficulties, new types of connectors have been contemplated. Ideas such as adding reinforcement or flat plates, or using bands or boxes to replace tie-rods have been proposed. Typical end plates are rectangular or cylindrical solid plates. To minimize the weight and provide a uniform pressure distribution, new concepts such as ribbed-, bomb-, or bow-shaped plates have been considered. Even though end plates were not an issue in fuel cell system designs in the past, they now provide a great challenge for designers. Changes in the materials, connecting methods, and shapes of an end plate allow us to achieve lighter, stronger end plates, resulting in more efficient fuel cell systems.

Technology of Flexible Transparent Conductive Electrode for Flexible Electronic Devices (유연전자소자를 위한 차세대 유연 투명전극의 개발 동향)

  • Kim, Joo-Hyun;Chon, Min-Woo;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.1-11
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    • 2014
  • Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

Improvement of Connector Performance Using Analysis of Characteristic Impedance (특성임피던스 분석을 사용한 커넥터 성능향상)

  • Yang, Jeong-Kyu;Kim, Moon-Jung
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.9
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    • pp.47-53
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    • 2011
  • The signal transmission properties of the connector such as insertion loss and return loss are investigated using analysis procedure of S-parameter simulation, equivalent model extraction, and characteristic impedance calculation. S-parameter simulation is performed by connector's modeling and solving based on 3-dimensional finite element method. The connector's equivalent model of ${\pi}$ type is are proposed and extracted with an optimization process of circuit analysis simulator. The characteristic impedance of the connector is calculated with results of circuit analysis simulation and S-parameter data. According to the connector's characteristic impedance, it's revised design is carried out. In this work, the connector's effective contact area is increased and its body is applied as a high dielectric material in order to increase its capacitance and then obtain impedance matching. Therefore, return loss of the connector is improved by approximately 10 dB due to its design revision.

UV Photo Response Driven by Pd Nano Particles on LaAlO3/SrTiO3 Using Ambient Control Kelvin Probe Force Microscopy

  • Kim, Haeri;Chan, Ngai Yui;Dai, Jiyan;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.207.1-207.1
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    • 2014
  • High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

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Fabrication of Two-dimensional MoS2 Films-based Field Effect Transistor for High Mobility Electronic Device Application

  • Joung, DaeHwa;Park, Hyeji;Mun, Jihun;Park, Jonghoo;Kang, Sang-Woo;Kim, TaeWan
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.110-113
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    • 2017
  • The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

Atomic layer deposition of In-Sb-Te Thin Films for PRAM Application

  • Lee, Eui-Bok;Ju, Byeong-Kwon;Kim, Yong-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.132-132
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    • 2011
  • For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

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Embedding Cobalt Into ZIF-67 to Obtain Cobalt-Nanoporous Carbon Composites as Electrode Materials for Lithium ion Battery

  • Zheng, Guoxu;Yin, Jinghua;Guo, Ziqiang;Tian, Shiyi;Yang, Xu
    • Journal of Electrochemical Science and Technology
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    • v.12 no.4
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    • pp.458-464
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    • 2021
  • Lithium ion batteries (LIBs) is a kind of rechargeable secondary battery, developed from lithium battery, lithium ions move between the positive and negative electrodes to realize the charging and discharging of external circuits. Zeolitic imidazolate frameworks (ZIFs) are porous crystalline materials in which organic imidazole esters are cross-linked to transition metals to form a framework structure. In this article, ZIF-67 is used as a sacrificial template to prepare nano porous carbon (NPC) coated cobalt nanoparticles. The final product Co/NPC composites with complete structure, regular morphology and uniform size were obtained by this method. The conductive network of cobalt and nitrogen doped carbon can shorten the lithium ion transport path and present high conductivity. In addition, amorphous carbon has more pores that can be fully in contact with the electrolyte during charging and discharging. At the same time, it also reduces the volume expansion during the cycle and slows down the rate of capacity attenuation caused by structure collapse. Co/NPC composites first discharge specific capacity up to 3115 mA h/g, under the current density of 200 mA/g, circular 200 reversible capacity as high as 751.1 mA h/g, and the excellent rate and resistance performance. The experimental results show that the Co/NPC composite material improves the electrical conductivity and electrochemical properties of the electrode. The cobalt based ZIF-67 as the precursor has opened the way for the design of highly performance electrodes for energy storage and electrochemical catalysis.

Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process (Ni/4H-SiC Field Plate Schottky 다이오드 제작 시 과도 식각에 의해 형성된 Nickel_Titanium 이중 금속 Schottky 접합 특성과 공정 개선 연구)

  • Oh, Myeong-Sook;Lee, Jong-Ho;Kim, Dae-Hwan;Moon, Jeong-Hyun;Yim, Jeong-Hyuk;Lee, Do-Hyun;Kim, Hyeong-Joon
    • Korean Journal of Materials Research
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    • v.19 no.1
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    • pp.28-32
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    • 2009
  • Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

Applicability of Volatile Corrosion Inhibitor and VCI Films for Conservation of Artworks (미술작품의 보존을 위한 기화성 방청제 및 방청필름의 적용성 연구)

  • Beom, Dae Geon;Han, Ye Bin
    • Journal of Conservation Science
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    • v.36 no.2
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    • pp.82-92
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    • 2020
  • Modern artworks are constructed using a variety of materials and techniques. Sculptures, which predominantly consist of metals, usually have different shapes and consist of different material mixtures. The structural and material properties of these sculptures are often controlled by conservation treatment methods. However, the application of existing treatment methods is challenging at times, indicating that more diverse treatment materials and techniques are necessary. Therefore, in this study, a treatment method that employs volatile corrosion inhibitor(VCI) powder, rather than an anti-corrosion solution, for the conservation and management of metal artworks was used. VCI powder and VCI films containing VCI powder were used, and the results obtained confirmed that both of them showed anti-corrosion effect. Only a slight change in the chromaticity of metal samples was observed, and compared to the untreated samples, the application of the VCI powder resulted in a decrease in the rate of corrosion by half. Moreover, VCI film tests revealed that comparing to the untreated or polyethylene film-treated samples, VCI film treatment resulted in a decrease in the occurrence of corrosion compounds. The contact angle, surface energy, and surface electrical resistance were measured, and the evaluation of these surface properties established the anti-corrosion effect of VCI. Additionally, direct application of VCI and VCI films on actual sculptures further confirmed the anti-corrosion effect of VCI.

Accuracy Evaluation of Non-prism Total Station for Topographic Surveying (지형측량을 위한 무 프리즘 토털스테이션 정확도 평가)

  • Seo, Dong-Ju
    • Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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    • v.24 no.5
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    • pp.433-441
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    • 2006
  • With a development of electrical technology in recent, it is possible to measure distance without direct contact to object using laser which launched at instrument and reflect from object. Furthermore, the advent of non prism total station brought the increment of application in many fields including not only road, airport, and harbors but also measurement and monitoring of structural displacement in construction fields. In this study, therefore, to evaluate accuracy of non prism total station, accuracy was analyzed by measuring certain distance which classified by both certain materials and angle of reflection. By this method, the derived values were applied to topographical survey for the efficient applicability. According to a study, result value of non prism total station was satisfBctory regardless of material when the angle of reflection was 90 degrees. RMSE increased when the angle of reflection are gradually increased to acute angle. In result of regression analysis using certain distance which classified by both materials and angles of reflection, there is relationship between distance and angle of reflection, but material has no relevance to the result value. When carrying out general topographical survey, proper application of non prism total station will go far conducting safe and prompt survey at the dangerous site such a road which have lots of traffic flow and rock joint which have high angles of inclination.