• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.605-608
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• 1999

We report investigations on a Pentacene thin film as a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and Al electrode was deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by the three-terminal contact resistance methods, as the results contact resistance between pentacene films and the Aluminium electrode is 5.064G$\Omega$. The Al contact with the pentacene shows the bottom contact resistance. From the current-voltage characteristics, electrical conductivity of the Pentacene film is found as ~ 10$^{-4}$ /cm. physical characterization of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.4
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• pp.172-181
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• 2024

In this study, the effect of addition of Ti and Co elements on microstructural evolution and characteristics of vacuum-casted Cu-25%Cr electrical contact material was investigated. The coarse and insoluble Cr phases with an average size of 300 ㎛ in commercial Cu-25%Cr alloy were reduced to tens of micrometers in vacuum casted Cu-25%Cr-X(X=Ti, Co) alloy, which can be interpreted as result controlling coarsening and the work-frame structure of the insoluble Cr phase by the formation of intermetallic compounds such as Cr₂Ti or Cr_0.5Co_1.5Ti around the Cr phase As a result, the electrical properties such as weight loss and fusion resistance against the repeated arc generation of the electrical contact material as well as the mechanical properties were greatly improved.

• Proceedings of the KSR Conference
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• 2009.05b
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• pp.499-503
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• 2009

In this study, the dynamic characteristic of a contact wire and pantograph suppling electrical power to high-speed trains are investigated from an electrical response point of view. To analysis power line disturbance by induced contact loss phenomenon for high speed operation, a hardware Simulator which considered contact loss between contact wire and the pantograph as well as contact wire deviation is developed. It is confirmed that a contact wire and pantograph model are necessary for studying the dynamic behavior of the pantograph system. One of the most important needs accompanied by increasing the speed of high-speed train is reduced that an arc phenomenon by loss of contact brings out EMI. In case of a high-speed train using electrical power, as comparison with diesel rolling stock, PLD(Power Line Disturbance) such as harmonic, transient voltage and current, EMI, dummy signal injection etc usually occurs. Throughout experiment, it is verified that an arc phenomenon is brought out for simulator operation and consequently conducted noise is flowed in electric circuit by power line disturbance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.261-261
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• 2010

In electric railways, high speed trains are normally supplied by AC 25kV power by contact between a pantograph contact strip and a contact wire. Advanced railway operating countries are actively researching various areas for the development of contact strips due to the reason that the properties of contact strips are one of the key factors of electric railways. This paper applied nano technology which is rapidly growing in many areas to the contact strip of a pantograph for current collection performance improvement considering speed up of electric railways. In detail, this paper proposes a method to dope nano particles of metal to a Korea Train eXpress(KTX) carbon pantograph and its measurement results. It is expected that the contents of this paper be used for preliminary study of high-speed railway current collection technologies.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1500-1502
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• 2005

In this paper, the electrical characteristics of the non-contact transformer is presented using conventional coupled inductor theory. Each non-contact transformer is analyzed through simulation and measurement. In high power applications, non-contact transformer is so bulky and heavy that it should be split by some light transformers. So non-contact transformer needs several small transformer modules which are connected series or parallel to transfer the primary power to the secondary one. This paper shows analytic result of the each non-contact transformer module and comparison result between series-connection and parallel-connection of the non-contact transformer. The results are verified on the simulation based on the theoretical analysis and the 30kW experimental prototype.

• Transactions of the Society of Information Storage Systems
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• v.10 no.2
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.3
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• pp.18-23
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• 2009

This paper focuses on development of new conveyer directly driven by the contact-less energy transmission system. The effect of the resonant circuit and the flux linkage characteristics caused from that are analyzed by using 3D finite element analysis. From the result it is shown that the resonant circuit needs to transfer energy from the primary core to the secondary core. Also the influence of the linear induction motor on the contact-less energy transmission system is presented. New conveyer and the experimental apparatus was manufactured by using the contact-less energy transmission system and the linear induction motor. Possibility of realization of the conveyer is proved by comparison the simulation result which is obtained by using 2D finite element analysis with experimental one and the characteristic of the voltage and resonant current.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.3
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• pp.175-179
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• 2022

Magnetic arc extinguishing technology is effective as an extinguishing device for low-voltage direct current (DC) circuit breakers with a resistive load of ≤4 kW. The separation distance between the magnet and the electrical contact must be shortened to increase the magnetic arc extinguishing force. However, if the magnet is installed too close to the electrical contact points, the magnet is exposed to high temperatures due to the arc current generated when the load current is cut off and the magnetism is lost. To solve this problem, the effective magnetic flux density at the electrical contact can be maintained high by placing the arc extinguishing magnet in a tandem structure with the electrical contact point between them, and the proper separation distance between the contact points and the magnet can be maintained. In addition, an electric arc extinguishing technology that emits arc energy using a series circuit of diode and resistor is used to suppress the continuous arc voltage generated by the inductive load. For the proposed circuit breaker, the breaking characteristics are analyzed through the breaking test for the DC load of the 760 V level, the load power of 4 kW, and the time constant of 5 ms, and an appropriate arc extinguishing design guideline is proposed.