• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2171-2174
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• 2008

The design of thermal radiation shield cooled by a cryocooler is presented. This study is motivated mainly by our recent development of prototype superconducting magnet system for the Cyclotron K120. The superconducting magnet system is composed of the magnet cryostat, transfer line and supply cryostat. In order to minimize thermal radiation load, the superconducting coil form in the magnet cryostat is enclosed by the thermal radiation shield which is thermally connected to the first-stage cold head of a two-stage cryocooler in the supply cryostat. Since the supply cryostat is located far from the magnet cryostat large temperature gradient along the thermal shield is unavoidable. In this paper, the thermal radiation shield is optimized to minimize temperature gradient with taking into account the cryogenic load, system structure and electrical load. The effect of heat source from thermal conduction through mechanical supports on the temperature distribution of thermal radiation shield is also discussed.

• 한국진공학회지
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• 제21권4호
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• pp.185-192
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• 2012

Light Emitting Diode (LED) 칩의 크기는 전도를 통한 열의 방출에 있어 면적의 확대로 인한 열 밀도의 감소와 칩의 외부양자효율 변화로 인하여 LED 칩의 p-n 정션 온도와 패키지의 열 저항에 영향을 미친다. 본 연구에서는 16칩 LED 패키지에서 칩의 크기가 0.6 mm와 1 mm인 두 가지 경우에 대하여 순전압(forward voltage)을 측정하였고, 순간열분석법(thermal transient analysis)을 이용하여 정션 온도와 열 저항을 평가하였으며, 이를 LED 칩의 전기적인 특성과 LED 패키지의 구조적인 특성과 연관하여 해석하였다.

• 한국세라믹학회지
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• 제37권7호
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.1190-1192
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• 2003

This paper presents a novel single-stage high frequency resonant inverter link type DC-DC converter using zero voltage switching with high input power factor. The proposed high frequency resonant converter integrates half-bridge boost rectifier as power factor corrector (PFC) and half-bridge resonant converter into a single stage. The input stage of the half-bridge boost rectifier is working in discontinuous conduction mode(DCM) with constant duty cycle and variable switching frequency. So that boost converter make the line current follow naturally the sinusoidal line voltage waveform. Experimental results have demonstrated the feasibility of the proposed DC-DC converter. This proposed converter will be able to be practically used as a power supply in various fields as induction heating applications, DC-DC converter etc.

• Journal of Power Electronics
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• 제18권1호
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1252-1254
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• 2005

High Tc superconducting(HTS) model coil was prepared. Current-voltage(I-V) characteristic curves of model coil, sub-coils and joints were investigated at 77K and other some temperatures. Cooling system for characteristics measurement was made by using G-M cryocooler. At 77K, quench current(Iq) of model coil was 43.9A and the lowest Iq of sub-coils was 38.8A. At 55K, sub coil SP #06 was 106A. So, 100A was chosen as the operating current at 55K with margin. Joule heat of model coil was 0.65W at 100A, operating current and 58K. Joint resistances between sub-coils were about $70n{\Omega}$ at 77K and about $30n{\Omega}$ at 55K.

• Bulletin of the Korean Chemical Society
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• 제15권7호
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• pp.541-545
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• 1994

A series of samples of the ${Ca_xEu_{1-x}FeO_{3-y}$ (x=0.00, 0.25, 0.50, 0.75, and 1.00) system has been prepared at $1,250^{\circ}C$ under an atmospheric air pressure. X-ray diffraction analysis of the solid solution assigns the structure of the compositions of x=0.00, 0.25, 0.50, and 0.75 to the orthoferrite-type orthorhombic system, and that of x=1.00 to the brownmillerite-type orthorhombic one. The mole ratios of $Fe^{4+}$ ion in the solid solutions or ${\tau}$ values were determined by the Mohr's salt analysis and nonstoichiometric chemical formulas of the system were formulated from x, ${\tau}$, and y values. From the result of the Mossbauer spectroscopy, the coordination and magnetic property of the iron ion are discussed. The electrical conductivities are measured as a function of temperature. The activation energy is minimum at the composition of x=0.25. The conduction mechanism can be explained by the hopping of electrons between the mixed valences of $Fe^{3+}\;and\;Fe^{4+}$ ions.

• Journal of information and communication convergence engineering
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• 제17권2호
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• 한국분말재료학회지
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• 제29권6호
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• pp.485-491
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• 2022

Lithium lanthanum titanium oxide (LLTO) is a promising ceramic electrolyte because of its high ionic conductivity at room temperature, low electrical conductivity, and outstanding physical properties. Several routes for the synthesis of bulk LLTO are known, in particular, solid-state synthesis and sol-gel method. However, the extremely low ionic conductivity of LLTO at grain boundaries is one of the major problems for practical applications. To diminish the grain boundary effect, the structure of LLTO is tuned to nanoscale morphology with structures of different dimensionalities (0D spheres, and 1D tubes and wires); this strategy has great potential to enhance the ion conduction by intensifying Li diffusion and minimizing the grain boundary resistance. Therefore, in this work, 0D spherical LLTO is synthesized using ultrasonic spray pyrolysis (USP). The USP method primarily yields spherical particles from the droplets generated by ultrasonic waves passed through several heating zones. LLTO is synthesized using USP, and the effects of each precursor and their mechanisms as well as synthesis parameters are analyzed and discussed to optimize the synthesis. The phase structure of the obtained materials is analyzed using X-ray diffraction, and their morphology and particle size are analyzed using field-emission scanning electron microscopy.

• 한국초전도ㆍ저온공학회논문지
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• 제9권1호
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• pp.47-52
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• 2007

This paper presents characteristics analysis of persistent current switch(PCS) system on a small scale by using YBCO coated conductor(CC). A high temperature superconductor(HTS) PCS system mainly consists of a PCS, a HTS magnet load and a magnet power supply(MPS). To design the optimal heater triggering switch. the three-dimensional heat conduction model was analyzed by finite element method(FEM). The electrical equivalent model considering the n-value of CC was applied to analyze current decay during persistent current mode. In the experiment and simulation, the heater was applied with a current of 0.43A and the current was ramped up to 10A and 20A with 0.2A/s. Finally, experimental results of the HTS PCS system have been compared with the theoretical results. It has been concluded that flux creep can not influence the results because the operating current was 40% of critical current and optimal sequential operation of the PCS system is indispensable to enhance its performance.