• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• KEPCO Journal on Electric Power and Energy
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• v.7 no.1
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• pp.161-165
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• 2021

In general, SOFCs mainly use Ni-YSZ cermet, a mixture of Ni and YSZ, as an anode material, which is stable in a high-temperature reducing atmosphere. However, when SOFCs have operated at a high temperature for a long time, the structural change of Ni occurs and it results in the problem of reducing durability and efficiency. Accordingly, a development of a new anode material that can replace existing nickel and exhibits similar performance is in progress. In this study, SrTiO₃, which is a perovskite-based mixed conductor and one of the candidate materials, was used. In order to increase the electrical conduction properties, Y_0.08Sr_0.92Fe_0.3Ti_0.7O₃, doped with 0.08 mol of Y³⁺ in Sr-site and 0.03 mol of transition metal Fe³⁺ in Ti-site, was synthesized and its chemical diffusion coefficient and reaction constant were measured. Its electrical conductivity changes were also observed while changing the oxygen partial pressure at a constant temperature. The performance as a candidate electrode material was verified by predicting the defect area through the electrical conductivity pattern according to the oxygen partial pressure.

• PNF and Movement
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• v.18 no.3
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• pp.393-401
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• 2020

Purpose: In recent years, there has been increasing interest in using blood flow-restricted exercise (BFRE) or KAATSU training. The KAATSU training method, which partially restricts arterial inflow and fully restricts venous outflow in the working musculature during exercise at reduced exercise intensities, has been proven to result in substantial increases in both muscle hypertrophy and strength. The purpose of this study was to investigate the proper level of pressure for KAATSU training using compound muscle action potential (CMAP) analysis. Methods: Twenty-two healthy adults voluntarily participated in this study. CMAP was conducted by measuring the terminal latency and amplitude using a motor nerve conduction velocity test. For reference-line, supramaximal electrical stimulation was applied to the median nerves of the participants to obtain CMAP for the abductor pollicis brevis. For baseline, the intensity of the electrical stimulation was decreased to a level at which the CMAP amplitude was about a third of the CMAP amplitude obtained by the supramaximal electrical stimulation. The pressure levels for the KAATSU were set as a systolic blood pressure (strong pressure), the median values of systolic and diastolic blood pressure (intermediate pressure), and diastolic blood pressure (weak pressure). In the KAATSU condition, CMAP was performed under the same conditions as baseline after low-intensity thumb abduction exercises were performed at the subjects' own pace for one minute. Results: As the pressure increased, the CMAP amplitude was significantly increased, signifying that more muscle fibers were recruited. Conclusion: This study found that KAATSU training recruited more muscle fibers than low-intensity exercise without the restriction of blood flow.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.499-503
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• 2022

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩ·cm, 0.316%/℃, 296 K and 0.023 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.6
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• pp.90-96
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• 2014

The electrical resistivity of concrete can be related to two processes involved in corrosion of reinforcement: initiation (chloride penetration) and propagation (corrosion rate). The resisistivity of concrete structure exposed to chloride indicates the risk of early corrosion damage, because a low resistivity is related to rapid chloride penetration and to high corrosion rate. Concrete resistivity is a geometry-independent material property that describes the electrical resistance, which is the ratio between applied voltage and resulting current in a unit cell. In previous study, it was realized that the resistivity of concrete depended on the moisture content in the concrete, microstructural properties, and environmental attack such as carbonation. The current is carried by ions dissolved in the pore liquid. While some data exist on the relationship between moisture content on electrical resistivity of concrete, very little research has been conducted to evaluate the effect of chloride on the conduction of electricity through concrete. The purpose of this study is to examine and quantify the effect of chloride content on surface electrical resistivity measurement of concrete. It was obvious that chloride content had influenced the resistivity of concrete and the relationship showed a linear function. That is, concrete with chloride ions had a comparatively lower resistivity. Decreasing rate of resistivity of concrete was clear at early time, however, after 50 days resistivity was constant irrespective of chloride concentration. Conclusively, this paper suggested the quantitive solution to depict the electrical resistivity of concrete with chloride content.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.973-979
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• 2001

Tin-doped indium oxide (ITO) thin films were deposited using r.f. magnetron reactive sputtering and the electrical properties, such as the resistivity, carrier concentration and mobility, were investigated as a function of the sample position under a given magnetron sputtering condition. The nonhomogeneity of the electrical properties with the sample position was observed under a given magnetron sputtering condition. The resistivity of ITO thin film on the substrate which corresponded to the center of the target had a minimum value, 2∼4$\times$10$\^$-4/$\Omega$$.$cm, and it increased symmetrically when the substrate deviated from the center. The density measurement result also showed that ITO thin film deposited at the center has a maximum density of 7.0g/cm$^3$, which was a relative density of about 97%, and the density decreased symmetrically as the substrate deviated from the center. The nonhomogeneity of electrical properties with the deposition position could be explained with the incidence angle of the source beam alpha, which is related with an atomic self-shadowing effect. It was confirmed experimentally that the density in film affect both the carrier mobility and the conductivity. In the case where the density of ITO thin film is 7.0g/cm$^3$, the magnitude of the mean free path was identical with that of the grain size(the diameter of column). However, in the other cases, the mean free path was smaller than the grain size. These results showed that the scattering of the free electrons at the grain boundary is the major factor for the electrical conduction in ITO thin films having a high density, and there exists other scattering sources such as vacancies, holes, or pores in ITO thin films having a low density.ing a low density.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1563-1565
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• 1999

Linear and nonliear complex permittivities have been measured for amorphous copolymers of vinylidene cyanide (VDCN) with vinyl acetate (VAc), vinyl propionate (VPr), vinyl benzoate (VBz), styrene (St) and methyl methacrylate (MMA). It is found that the third order permittivity ${\varepsilon}_3$ depends upon frequency according to a function ${\Delta}_{{\varepsilon}_3}/(1+i{\omega}{\tau}_^3)$ while the linear permittivity obeys a Debye function ${\Delta}_{{\varepsilon}_1}/(1+i{\omega}{\tau}_1)$. Experimental results are well fitted by the above predicted functions except at low frequencies where dc conduction dominates. The ${\tau}_1$ and ${\tau}_3$ are nearly equal, and depend upon temperature according to a WLF form. The relaxation strength ${\Delta}_{{\varepsilon}_1}$ depends upon comonomers ranging from $130_{{\varepsilon}_0}$(VAc) to $20{{\varepsilon}_0}$(MMA). The ${\Delta}_{{\varepsilon}_3}$ is negative and depends more strongly upon comonomers. Combined knowledge about linear and nonlinear permittivities predicts very large correlation factors which indicates strongly cooperative dipolar motions in those amorphous copolymers.