• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.40-46
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• 2017

We reviewed the electrical properties of SOFC anode manufactured using spherical Ni and nano YSZ powder. When core-shell is fabricated by using submicron Ni as core and nano-sized YSZ as shell for SOFC anode, the electrical conductivity of the $0.2{\mu}m$ Ni-YSZ core-shell was 3 times higher than that of $1.0{\mu}m$ NiO or $1.0{\mu}m$ Ni-YSZ. Hydrogen selectivity was similar at $800^{\circ}C$, but hydrogen selectivity and methane conversion rate under $750^{\circ}C$ was 10~25% higher, Power density was more than 2 times, ASR was about 1/3, when exposed to $H_2$ atmosphere at $750^{\circ}C$ for a long time, Ni particles did not have any growth or cut off conduction path.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.5
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.3
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• pp.214-222
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• 2015

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

• Journal of Power Electronics
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• v.17 no.1
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• pp.222-231
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• 2017

In this paper, a new architecture for a cost-effective power conditioning systems (PCS) using a single-sourced asymmetric cascaded H-bridge multilevel inverter (MLI) for photovoltaic (PV) applications is proposed. The asymmetric MLI topology has a reduced number of parts compared to the symmetrical type for the same number of voltage level. However, the modulation index threshold related to the drop in the number of levels of the inverter output is higher than that of the symmetrical MLI. This problem results in a modulation index limitation which is relatively higher than that of the symmetrical MLI. Hence, an extra voltage pre-regulator becomes a necessary component in the PCS under a wide operating bias variation. In addition to pre-stage voltage regulation for the constant MLI dc-links, another auxiliary pre-regulator should provide isolation and voltage balance among the multiple H-bridge cells in the asymmetrical MLI as well as the symmetrical ones. The proposed PCS uses a single-ended DC-DC converter topology with a coupled inductor and charge-pump circuit to satisfy all of the aforementioned requirements. Since the proposed integrated-type voltage pre-regulator circuit uses only a single MOSFET switch and a single magnetic component, the size and cost of the PCS is an optimal trade-off. In addition, the voltage balance between the separate H-bridge cells is automatically maintained by the number of turns in the coupled inductor transformer regardless of the duty cycle, which eliminates the need for an extra voltage regulator for the auxiliary H-bridge in MLIs. The voltage balance is also maintained under the discontinuous conduction mode (DCM). Thus, the PCS is also operational during light load conditions. The proposed architecture can apply the module-integrated converter (MIC) concept to perform distributed MPPT. The proposed architecture is analyzed and verified for a 7-level asymmetric MLI, using simulation results and a hardware implementation.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.1-8
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• 1986

The preparation and electrical conductivity of $\beta$-$Al_2O_3$ are investigated as a function of $Na_2O$ content from the-oretical composition of $\beta$-$Al_2O_3$ to that of $\beta$"-$Al_2O_3$. $\beta$-$Al_2O_3$ $\beta$"$Al_2O_3$$\alpha$-Al2O3 and ${\gamma}$-NaAlO2 phases appear in the calcined powder at 125$0^{\circ}C$ for 2 hours. The majoity phase is $\beta$-$Al_2O_3$ in sintered specimens at 155$0^{\circ}C$ and 1$650^{\circ}C$ for 30 mins respectively and ${\gamma}$-4NaAlO_2$ phase also exists when Na2O content is over 10.39w/o ${\gamma}$-4NaAlO_2$ phase does not affect the grain growth of $\beta$-$Al_2O_3$ in sintering at 155$0^{\circ}C$ but acts as a reactive liquid for the abnormal grain growth of $\beta$-$Al_2O_3$in sintering at 1$650^{\circ}C$ The electrical conduction of $\beta$-$Al_2O_3$is predominated by 4Na^+$ ion. Contribution of ionic con-ductivity to total conductivity is gradually decreased with increasing temperature at given oxygen pressure and to -tal conductivity is increased by positive hole due to interstitial oxygen with increasing oxygen pressure.