• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.444-450
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• 2008

There are several ways to bond to building grounding systems for reducing GPR(ground potential rise) and EMI resulting from power system faults or lightning stroke to building. In order to verify effective bonding practice, the GPR and voltage of equipment due to the direct stroke to building are calculated with ATP-EMTP model for transformer, transmission line and MOV(Metal oxide varistor). The simulated model shows a satisfactory accuracy compared with experimental result for the $8/20{\mu}s$ simulated current pulse. It is observed that separate grounding can cause dangerous voltage to the building equipment and the performance of surge protective device can improve when it is installed to the protected equipment in distance as short as possible.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.297-299
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• 2003

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining for the fabrication of microholes on Borofloat33 glass. Copper electrode array is fabricated by the bonding of silicon upper substrate and lower substrate and copper electroplate. The silicon upper electrode having microholes fabricated by ICP-RIE is the mold of copper electroplate. The lower substrate is used as the seed layer for copper electroplate after Au - Au thermocompression bonding with the upper substrate.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.564-568
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• 2014

We present a 25-Gb/s optical transmitter composed of a Si ring modulator and CMOS driver circuit. The Si ring modulator is realized with 220-nm Si-on-insulator process and the driver circuit with 65-nm CMOS process. The modulator and the driver are hybrid-integrated on the printed circuit board with bonding wires. The driver is designed so that the parasitic bonding wire inductance provides enhanced driver bandwidth. The transmitter successfully demonstrates 25-Gb/s operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.38-41
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• 2001

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

• Journal of information and communication convergence engineering
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• v.13 no.3
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• pp.172-179
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• 2015

Face-to-face (F2F) bonding in three-dimensional integrated circuits (3D ICs), compared with other bonding styles, is closer to commercialization because of its benefits in terms of density, yield, and cost. However, despite the benefits that F2F bonding expect to provide, it's physical nature has not been studied thoroughly. In this study, we, for the first time, extract cross-die (inter-die) parasitic elements from F2F bonds on the full-chip scale and compare them with the intra-die elements. This allows us to demonstrate the significant impact of field sharing across dies in F2F bonding on full-chip noise and critical path delay values. The baseline method used is the die-by-die method, where the parasitic elements of individual dies are extracted separately and the cross-die parasitic elements are ignored. Compared with this inaccurate method, which was the only method available until now, our first-of-its-kind holistic method corrects the delay error by 25.48% and the noise error by 175%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.160-163
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• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.