• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.77-82
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• 2014

소프트 일렉트로닉스에 대한 많은 수요로 인해 신축성 전극이 주목 받고 있다. 그 후보 중 하나인 카본블랙 복합소재(composite)는 낮은 가격, 용이한 공정성뿐 만 아니라 특정 범위에서 인장에 따라 비저항이 감소하는 장점을 가지고 있다. 하지만 전자소자로 쓰이기엔 전기전도도가 좋지 못 한 단점을 가지고 있다. 그래핀은 2차원 나노구조의 카본 계열 물질로서 뛰어난 전기적 특성과 유연성을 가지고 있으며 그래핀의 첨가로 카본블랙 복합소재의 전도성을 향상시킬 것으로 예상된다. 본 연구에서는 그래핀을 카본블랙 전극에 첨가하여 강화된 전기적 특성을 조사하였다. 그래핀 첨가 카본전극의 전기저항률은 카본블랙 전극과 비교해 감소하였다. 이는 그래핀이 서로 접촉하지 않는 카본블랙 응집체를 연결하여 도전 구조를 강화하였기 때문이다. 또한 그래핀은 인장 시 나타나는 카본블랙 전극의 저항증가를 감소시켰다. 그 원인은 그래핀이 인장 시 멀어지는 카본블랙 응집체 간극을 연결함과 동시에 인장방향으로 정렬되기 때문이다. 결론적으로 그래핀 첨가는 카본블랙 복합소재의 전기적 특성을 향상시켜 신축성 전극으로서 2가지 효과를 부여한다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2017년도 추계 학술논문 발표대회
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• pp.153-154
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• 2017

Graphene is a nanomaterial and is known to have very high mechanical strength, thermal and electrical properties. However, graphene is known to be difficult to disperse among carbon-based materials due to van der Waals force. In this study, to solve the dispersion problem of graphene nanoplatelet, oxidized graphene nanoplatelet was prepared by oxidizing GNP in nitric acid. The prepared GO was dispersed in ethanol and distilled water before incorporation into the epoxy paint to confirm dispersibility. In addition, GNP/Epoxy and GO/Epoxy tensile specimens were prepared by mixing GNP and GO at 0.1, 0.3, 0.5 and 1.0 wt.% In epoxy coatings and tensile stress-strain characteristics were investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.628-628
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• 2013

Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

• Composites Research
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• 제29권6호
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• pp.375-378
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• 2016

Characteristics of nanocrystalline materials are known substantially dependent on the microstructure such as grain size, crystal orientation, and grain boundary. Thus it is desired to have systematic characterization methods on the various nanomaterials with complex geometries, especially in low dimensional nature. One of the interested nanomaterials would be a pure two-dimensional material, graphene, with superior mechanical, thermal, and electrical properties. In this study, mechanical properties of "polycrystalline" graphene were numerically investigated by molecular dynamics simulations. Subdomains with various sizes would be generated in the polycrystalline graphene during the fabrication such as chemical vapor deposition process. The atomic models of polycrystalline graphene were generated using Voronoi tessellation method. Stress strain curves for tensile deformation were obtained for various grain sizes (5~40 nm) and their mechanical properties were determined. It was found that, as the grain size increases, Young's modulus increases showing the reverse Hall-Petch effect. However, the fracture strain decreases in the same region, while the ultimate tensile strength (UTS) rather shows slight increasing behavior. We found that the polycrystalline graphene shows the reverse Hall-Petch effect over the simulated domain of grain size (< 40 nm).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.273.1-273.1
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• 2016

Graphene exhibits a number of unique properties that make it an intriguing candidate for use in sensor. Here, we report graphene-based gas sensor. Graphene was grown using CVD. Then, the sensor was made using standard lithography techniques. The sensor conductance increased upon exposure to NH3, whereas it decreased upon NO2, suggesting that NH3 and NO2 might be discriminated using the graphene-based sensor. To improve the sensitivity, graphene was treated with hydrogen plasma. After hydrogen treatment, the electrical properties of graphene changed from ambipolar to p-type semiconductors. In addition, the sensor performance was improved probably due to an opening of bandgap.

• 청정기술
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• 제28권4호
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• pp.293-300
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• 2022

그래핀의 우수한 기계적, 전기적, 열적 성질은 최근 몇 년 동안 여러 연구 분야에서 지대한 관심을 불러일으켰다. 그래핀을 생산하는 대표적인 방법인 습식공정 중 액상박리(liquid-phase exfoliation, LPE)는 초음파 및 높은 전단응력을 이용하여 벌크흑연을 그래핀으로 박리하는 기술이다. 액상박리에 의해 생산된 그래핀 분산액은 그래핀 잉크로 전환되어 그 활용폭을 더 넓힐 수 있는 장점이 있지만 고품질의 그래핀을 생산하고 가격경쟁력을 확보해야 한다. 위 조건을 만족하기 위해서 그래핀을 효율적으로 박리할 수 있는 공정 확보와 더불어 상대적으로 가격이 저렴한 천연흑연 기반의 그래핀 분산액 및 잉크를 생산해야 한다. 본 연구에서는 합성흑연 보다 약 3배 정도 저렴하고 그 크기는7배 이상 큰 천연흑연을 흐름반응기 액상박리 공정을 이용하여 박리를 시도하고 공정의 최적화와 박리된 그래핀의 구조적, 전기적 특성을 분석하였다. 천연흑연 기반 그래핀의 전기적 특성을 분석하기 위해 잉크 정제화 공정을 거쳐 그래핀 잉크를 생산하고 인쇄 장비를 사용하여 그래핀 패턴을 제작하였다. 본 연구를 통해 보다 경제적인 그래핀 분산액 및 잉크를 생산하고 그래핀 인쇄 소자를 개발할 수 있는 방법을 제시할 수 있을 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.360-366
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• 2020

Focused electron beams with high energy acceleration are versatile probes. Focused electron beams can be used for high-resolution imaging and multi-mode nanofabrication, in combination with, molecular precursor delivery, in an electron microscopy environment. A high degree of control with atomic-to-microscale resolution, a focused electron beam allows for precise engineering of a graphene-based field-effect transistor (FET). In this study, the effect of electron irradiation on a graphene FET was systematically investigated. A separate evaluation of the electron beam induced transport properties at the graphene channel and the graphene-metal contacts was conducted. This provided on-demand strategies for tuning transfer characteristics of graphene FETs by focused electron beam irradiation.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.60-64
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• 2023

본 연구에서는 그래핀 기반 소자의 성능에 영향을 미치는 그래핀과 금속 사이의 전기적 접촉저항 특성을 비교 분석하였다. 화학기상증착법을 이용하여 고품질의 그래핀을 합성하였으며, 전극 물질로 Al, Cu, Ni 및 Ti를 동일한 두께로 그래핀 표면 위에 증착하였다. TLM (transfer length method) 방법을 통해 SiO₂/Si 기판에 전사된 그래핀과 금속의 접촉저항을 측정한 결과, Al, Cu, Ni, Ti의 평균 접촉저항은 각각 345 Ω, 553 Ω, 110 Ω, 174 Ω으로 측정되었다. 그래핀과 물리적 흡착 특성을 갖는 Al와 Cu에 비해 화학적 결합을 형성하는 Ni과 Ti의 경우, 상대적으로 더 낮은 접촉저항을 갖는 것을 확인하였다. 본 연구의 그래핀과 금속의 전기적 특성에 대한 연구 결과는 전극과의 낮은 접촉저항 형성을 통해 고성능 그래핀 기반 전자, 광전자소자 및 센서 등의 구현에 기여할 수 있을 것으로 기대한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.112-116
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• 2018

Electric double layer capacitors (EDLCs) are promising candidates for energy storage devices in electronic applications. An EDLC yields high power density but has low specific capacitance. Carbon material is used in EDLCs owing to its large specific surface area, large pore volume, and good mechanical stability. Consequently, the use of carbon materials for EDLC electrodes has attracted considerable research interest. In this paper, in order to evaluate the electrochemical performance, graphene is used as an EDLC electrode with flake sizes of 3, 12, and 60 nm. The surface characteristic and electrochemical properties of graphene were investigated using SEM, BET, and cyclic voltammetry. The specific capacitance of the graphene based EDLC was measured in a 1 M $TEABF_4/ACN$ electrolyte at the scan rates of 2, 10, and 50 mV/s. The 3 nm graphene electrode had the highest specific capacitance (68.9 F/g) compared to other samples. This result was attributed to graphene's large surface area and meso-pore volume. Therefore, large surface area and meso-pore volume effectively enhances the specific capacitance of EDLCs.