• 대한기계학회논문집
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• 제18권11호
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• pp.2967-2972
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• 1994

The multiple character of the contact interaction and the collective behavior of elementary microcontacts play a significant role in all the processes occurring in the surface layers, including the failure due to friction and wear. The array of metal spheres compressed between flat plates has been used for simulation of the contact behavior of multiple contact of solids under normal loading. An experimental design has been made providing regular array of the spheres at the same size with different spatial order. Measurement of electrial contact resistance has been made using the equipment providing the adequate accuracy in the range of micro Ohms. The data on electrical contact resistance have been compared with theoretical predictions using the multiple contact model of constriction resistance. The effect of single spots number and array on conductivity of contact has been evaluated.

• 대한전기학회논문지
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• 제41권2호
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1080-1085
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• 2003

The flow of electrical current through a microscopic actual contact spot between two conductors is influenced by the flow through adjacent contact spots. A smoothed version of this interaction effect is developed and used to predict the contact resistance when the statistical size and spatial distribution of contact spots is known. To illustrate the use of the method, an idealized fractal rough surface is defined using the random midpoint displacement algorithm and the size distribution of contact spots is assumed to be given by the intersection of this surface with a constant height plane. With these assumptions, it is shown that including finer scale detail in the fractal surface, equivalent to reducing the sampling length in the measurement of the surface, causes the predicted resistance to approach the perfect contact limit.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.407-412
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• 2019

In this paper, the changes in the electrical characteristics (arc energy, contact resistance, and bouncing phenomenon) due to the deterioration of the contact are analyzed. The results are generally consistent and can be analyzed for contact deterioration. The results of the experiment demonstrate that the arc energy is linearly related to the current when the contact samples and the voltage conditions are the same. The contact resistance varies due to multiple factors, but is generally within a certain range, and the contact deterioration can be determined. Contact stabilization can be detected by the decrease in the bouncing phenomenon due to deterioration (the change of the shape of the contact).

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2348-2352
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• 2017

The electrical contact characteristics including temperature rise, contact resistance and arc erosion rate of the $Ag-SnO_2$ materials with increased $SnO_2$ content were investigated during the repeated make-and-break operations. The thickness of arcing melting layer reduces by half and the arc erosion rate decreases more than 70% under 10000 times operations at AC 10 A with the $SnO_2$ content increasing from 15 wt.% to 45 wt.%, on one hand, temperature rise and contact resistance increase obviously but could be reduced to the same order of conventional $Ag-SnO_2$ materials by increasing the contact force. The microstructure evolution and the effect of $SnO_2$ on the arc erosion, contact resistance were analyzed.

• 전기학회논문지
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• 제67권8호
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• pp.1106-1112
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• 2018

In this paper, measurement techniques are presented to test the performance of insulation without interruption if it is difficult to measure insulation resistance. Especially, non-contact voltage phase detection techniques have been developed that can be applied in environments where it is difficult to find voltage measurement locations such as component receptors. The performance verification of the non-interrupting insulation resistance measuring devices has been tested against existing products using standard calibration equipment and test jigs. The validation confirmed performance within 2 % for direct contact type and within 10 % for non-contact type. In addition, the procedure to make continuous insulation test using the equipment was proposed.

• 한국초전도ㆍ저온공학회논문지
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• 제24권4호
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• pp.40-45
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• 2022

The electrical/thermal stabilities and magnetic field controllability of a no-insulation (NI) high-temperature superconducting magnet are characterized by contact resistance between turn-to-turn layers, and the contact resistance characteristics are determined by properties of conductor surface and winding tension. In order to accurately predict the electromagnetic characteristics of the NI coil in a design stage, it is necessary to control the contact resistance characteristics within the design target parameters. In this paper, the contact resistance and critical current characteristics of a rare-earth barium copper oxide (REBCO) conductor were measured to analyze the effects of surface treatment conditions (roughness and oxidation level) of the copper stabilizer layer in REBCO conductor. The test samples with different surface roughness and oxidation levels were fabricated and conductor surface analysis was performed using scanning electron microscope, alpha step surface profiler and energy dispersive X-ray spectroscopy. Moreover, the contact resistance and critical current characteristics of the samples were measured using the four-terminal method in a liquid nitrogen impregnated cooling environment. Compared with as-received REBCO conductor sample, the contact resistance values of the REBCO conductors, which were post-treated by the scratch and oxidation of the surface of the copper stabilizer layer, tended to increase, and the critical current values were decreased under certain roughness and oxidation conditions.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.