• Title/Summary/Keyword: Electrical Conductance

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Theoretical Model and Experimental Analysis of Electrical Conductivity in Hydrogenated Amorphous Silicon (비정질 실리콘의 전기 전도도에 대한 이론적 모델 및 실험적 분석)

  • Kim, Yong-Sang;Park, Jin-Seok;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.127-130
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    • 1989
  • This paper reports the theoretical model and the experimental results regarding to the electrical conductivity of hydrogenated amorphous silicon (a-Si:H). The total effective conductance of a-Si:H with a planar structure has been considered as the sum of the conductance of an adsorbate-induced layer, a surface-interface layer, a bulk layer, and a substrate-interface layer. In order to investigate the effects of space charge layers in a-Si:H on the conductivity, the thickness dependence of the conductivity is characterized and the conductivities measured at the upper electrodes deposited on a-Si:H are compared with those measured at the lower electrodes deposited on the glass substrate. From our analysis, the bulk conductivity and the thickness of the space charge layer in a-Si:H are characterized quantitatively.

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A Study on Electrical Characteristic Improvement & Design Parameters of Power MOSFET with Single Floating Island Structure (단일 Floating Island 구조 Power MOSFET의 전기적 특성 향상과 설계 파라미터에 관한 연구)

  • Cho, Yu Seup;Sung, Man Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.4
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    • pp.222-228
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    • 2015
  • Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

Electrical and Optical Property of Single-Wall Carbon Nanotubes Films (단일벽 탄소나노튜브 필름의 전기적 및 광학적 특성)

  • Oh, Dong-Hoon;Kang, Young-Jin;Jung, Hyuck;Song, Hye-Jin;Cho, You-Suk;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.19 no.9
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    • pp.488-493
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    • 2009
  • Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

Lumped-Parameter Thermal Analysis and Experimental Validation of Interior IPMSM for Electric Vehicle

  • Chen, Qixu;Zou, Zhongyue
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2276-2283
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    • 2018
  • A 50kW-4000rpm interior permanent magnet synchronous machine (IPMSM) applied to the high-performance electric vehicle (EV) is introduced in this paper. The main work of this paper is that a 2-D T-type lumped-parameter thermal network (LPTN) model is presented for IPMSM temperature rise calculation. Thermal conductance matrix equation is generated based on calculated thermal resistance and loss. Thus the temperature of each node is obtained by solving thermal conductance matrix. Then a 3-D liquid-solid coupling model is built to compare with the 2-D T-type LPTN model. Finally, an experimental platform is established to verify the above-mentioned methods, which obtains the measured efficiency map and current wave at rated load case and overload case. Thermocouple PTC100 is used to measure the temperature of the stator winding and iron core, and the FLUKE infrared-thermal-imager is applied to measure the surface temperature of IPMSM and controller. Test results show that the 2-D T-type LPTN model have a high accuracy to predict each part temperature.

Setting Characteristic Assessment of Cementitious Materials using Electrical Impedance Spectroscopy (전기 임피던스 분광법을 이용한 시멘트계 재료의 응결 특성 평가)

  • Lee, Jun-Cheol;Park, In-Yong
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.5 no.4
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    • pp.474-480
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    • 2017
  • In this study, the evolution of electrical impedance of electric nodes was investigated to determine the setting time of cement paste using the electrical impedance spectroscopy method. The electric nodes were embedded in fresh cement paste and the electrical impedance signatures were continuously monitored. Vicat needle test and semi-adiabatic calorimetry test were also conducted to validate the electrical impedance spectroscopy method. During hydration period of cement paste, the magnitude of conductance gradually increased, and then started to decrease rapidly at a first certain time. After that, the magnitude of conductance gradually decreased at a second certain time. The times of turning point in the curves of magnitude of conductance seem to be related with the setting time by Vicat needle test. Also, the setting times by the electrical impedance spectroscopy method are well posed within the setting period estimated by the semi-adiabatic calorimetry test. Based on the results, it can be concluded that the setting time of cement paste can be effectively monitored through the electrical impedance spectroscopy method.

Electrical and Photoluminescence Characteristics of Nanocrystalline Silicon-Oxygen Superlattice for Silicon on Insulator Application

  • Seo, Yong-Jin
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.258-261
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    • 2002
  • Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI/dV) characteristics have been presented in the multi-layer nano-crystalline silicon/oxygen (no-Si/O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI/dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

Effects of Two-Step Aging Treatment on the Mechanical Properties of 6061 Al Alloy (A 6061 합금의 기계적 특성에 미치는 2단시효의 영향)

  • Lee, Bo-Bae;Im, Hang-Joon;Jeong, Geol-Chae.
    • Journal of the Korean Society for Heat Treatment
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    • v.32 no.2
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    • pp.57-60
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    • 2019
  • The impact of two-step treatment on the mechanical properties of the 6061 Al alloy was investigated by testing the hardness and electrical conductance values. After two-step aging treatment, the hardness and electrical conductivity of the alloy was increased, and if the first aging treatment temperature was lower than the secondary aging treatment temperature, both the hardness and the electrical conductivity were not increased. The higher the temperature of the first aging treatment, the higher the hardness. The temperature of the first aging treatment is $175^{\circ}C$, $150^{\circ}C$, $120^{\circ}C$, and the second is $175^{\circ}C$ and $120^{\circ}C$.

Properties of NiO-doped WO$_3$ (NiO 첨가에 따른 WO$_3$의 물성)

  • No, Hyo-Seop;Bae, In-Su;Jeong, Hun-Taek;Lee, Su-Seon;Hong, Gwang-Jun;Lee, Hyeon-Gyu;Park, Jin-Seong
    • Korean Journal of Materials Research
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    • v.11 no.4
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    • pp.272-277
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    • 2001
  • NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical Property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$ but the grain sixte of 0.1, 1, 10 mol% NiO-doped$ WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

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Characteristics of Polycrystalline Silicon TFT with Stress-Bias (스트레스에 따른 다결정 실리콘 TFT의 영향)

  • Baek, Do-Hyun;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.233-236
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    • 2000
  • Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

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The effect of binder in SWNT solution to gas selectivity of CNT-based gas sensors (가스센서로써 탄소나노튜브 용액속에 바인더가 가스 선택성에 미치는 효과)

  • Lee, Ho-Jung;Gam, Byung-Min;Choi, Young-Min;Kim, Seong-Jeen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.404-405
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    • 2008
  • In this work, we investigated the effect of the functionalized SWNT-polymer composites for increasing sensitivity and imparting selectivity to nanotube sensors. To do this, CNT -based gas sensors were fabricated with two types of dispersed SWNT solution involving different polymer resin of TEOS (Tetraethyl orthosilicate) or MTMS (Methyl trimethoxysilane) which is blended to adhere to substrate well. As the surfaces of TEOS and MTMS surrounding SWNTs remain functionalized to -OH and $-CH_3$ groups respectively after hardening, gas adsorption will be affected differently according to the type of gases. In the experiment, we examined the response of electrical conductance for alcohol vapour gas. As the result, the conductance in the sensors using TEOS decreased considerably while that of MTMS was nearly invariable.

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