• 제목/요약/키워드: Electrical Conductance

검색결과 299건 처리시간 0.027초

비정질 실리콘의 전기 전도도에 대한 이론적 모델 및 실험적 분석 (Theoretical Model and Experimental Analysis of Electrical Conductivity in Hydrogenated Amorphous Silicon)

  • 김용상;박진석;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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    • pp.127-130
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    • 1989
  • This paper reports the theoretical model and the experimental results regarding to the electrical conductivity of hydrogenated amorphous silicon (a-Si:H). The total effective conductance of a-Si:H with a planar structure has been considered as the sum of the conductance of an adsorbate-induced layer, a surface-interface layer, a bulk layer, and a substrate-interface layer. In order to investigate the effects of space charge layers in a-Si:H on the conductivity, the thickness dependence of the conductivity is characterized and the conductivities measured at the upper electrodes deposited on a-Si:H are compared with those measured at the lower electrodes deposited on the glass substrate. From our analysis, the bulk conductivity and the thickness of the space charge layer in a-Si:H are characterized quantitatively.

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단일 Floating Island 구조 Power MOSFET의 전기적 특성 향상과 설계 파라미터에 관한 연구 (A Study on Electrical Characteristic Improvement & Design Parameters of Power MOSFET with Single Floating Island Structure)

  • 조유습;성만영
    • 한국전기전자재료학회논문지
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    • 제28권4호
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    • pp.222-228
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    • 2015
  • Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

단일벽 탄소나노튜브 필름의 전기적 및 광학적 특성 (Electrical and Optical Property of Single-Wall Carbon Nanotubes Films)

  • 오동훈;강영진;정혁;송혜진;조유석;김도진
    • 한국재료학회지
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    • 제19권9호
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    • pp.488-493
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    • 2009
  • Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

Lumped-Parameter Thermal Analysis and Experimental Validation of Interior IPMSM for Electric Vehicle

  • Chen, Qixu;Zou, Zhongyue
    • Journal of Electrical Engineering and Technology
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    • 제13권6호
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    • pp.2276-2283
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    • 2018
  • A 50kW-4000rpm interior permanent magnet synchronous machine (IPMSM) applied to the high-performance electric vehicle (EV) is introduced in this paper. The main work of this paper is that a 2-D T-type lumped-parameter thermal network (LPTN) model is presented for IPMSM temperature rise calculation. Thermal conductance matrix equation is generated based on calculated thermal resistance and loss. Thus the temperature of each node is obtained by solving thermal conductance matrix. Then a 3-D liquid-solid coupling model is built to compare with the 2-D T-type LPTN model. Finally, an experimental platform is established to verify the above-mentioned methods, which obtains the measured efficiency map and current wave at rated load case and overload case. Thermocouple PTC100 is used to measure the temperature of the stator winding and iron core, and the FLUKE infrared-thermal-imager is applied to measure the surface temperature of IPMSM and controller. Test results show that the 2-D T-type LPTN model have a high accuracy to predict each part temperature.

전기 임피던스 분광법을 이용한 시멘트계 재료의 응결 특성 평가 (Setting Characteristic Assessment of Cementitious Materials using Electrical Impedance Spectroscopy)

  • 이준철;박인용
    • 한국건설순환자원학회논문집
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    • 제5권4호
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    • pp.474-480
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    • 2017
  • 본 연구에서는 전기 임피던스 분광법을 이용하여 시멘트계 재료의 응결 시점을 평가하였다. 시멘트 페이스트 시편을 제작한 후 전기노드를 매립하여 전기 임피던스 응답 스펙트럼의 변화를 연속적으로 모니터링하였으며, 이와 동시에 간이단열시험을 통한 수화온도측정과 비카트침 시험을 함께 수행하였다. 전기 임피던스 분광법에서는 시멘트 페이스트의 수화와 동시에 컨덕턴스가 서서히 증가하는 경향을 나타냈다. 이후, 특정시점에 이르러 컨덕턴스는 급격히 감소하는 경향을 나타냈으며, 이후 또다른 특정시점에서 완만하게 감소하는 경향을 나타냈다. 이러한 특정 시점은 간이단열시험 및 비카트침 시험에 의해 측정된 응결시점과 부합하는 것으로 나타났다. 이를 통해 전기 임피던스 분광법을 이용하여 시멘트계 재료의 응결을 효과적으로 모니터링하는 것이 가능하리라 판단된다.

Electrical and Photoluminescence Characteristics of Nanocrystalline Silicon-Oxygen Superlattice for Silicon on Insulator Application

  • Seo, Yong-Jin
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권5호
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    • pp.258-261
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    • 2002
  • Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI/dV) characteristics have been presented in the multi-layer nano-crystalline silicon/oxygen (no-Si/O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI/dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

A 6061 합금의 기계적 특성에 미치는 2단시효의 영향 (Effects of Two-Step Aging Treatment on the Mechanical Properties of 6061 Al Alloy)

  • 이보배;임항준;정걸채
    • 열처리공학회지
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    • 제32권2호
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    • pp.57-60
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    • 2019
  • The impact of two-step treatment on the mechanical properties of the 6061 Al alloy was investigated by testing the hardness and electrical conductance values. After two-step aging treatment, the hardness and electrical conductivity of the alloy was increased, and if the first aging treatment temperature was lower than the secondary aging treatment temperature, both the hardness and the electrical conductivity were not increased. The higher the temperature of the first aging treatment, the higher the hardness. The temperature of the first aging treatment is $175^{\circ}C$, $150^{\circ}C$, $120^{\circ}C$, and the second is $175^{\circ}C$ and $120^{\circ}C$.

NiO 첨가에 따른 WO$_3$의 물성 (Properties of NiO-doped WO$_3$)

  • 노효섭;배인수;정훈택;이수선;홍광준;이현규;박진성
    • 한국재료학회지
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    • 제11권4호
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    • pp.272-277
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    • 2001
  • WO$_3$에 NiO를 첨가하여 제조한 후막형 시편의 미세구조와 전기적 성질에 대해 연구하였다. NiO 첨가에 따른 WO$_3$의 결정립 성장이 억제되었고, 입도 분포도 균일하였으나 첨가량에 따른 결정립 크기 변화정도는 작았다. 산소 분압 감소로 WO$_3$의 전도성은 증가하였고, NiO 첨가에 의해 고용한계 이하에서는 전도성이 증가하였고, 이상에서는 전도성이 감소하였다. 온도 증가에 따라 외인성 (extrinsic) 구간에서는 전도성 변화가 적었고, 고온의 진성 (intrinsic) 구간에서는 전도도가 급격히 증가하였으며, 이들의 중간 온도에서는 산소흡착에 따라 전도도가 감소하였다.

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스트레스에 따른 다결정 실리콘 TFT의 영향 (Characteristics of Polycrystalline Silicon TFT with Stress-Bias)

  • 백도현;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.233-236
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    • 2000
  • Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

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가스센서로써 탄소나노튜브 용액속에 바인더가 가스 선택성에 미치는 효과 (The effect of binder in SWNT solution to gas selectivity of CNT-based gas sensors)

  • 이호중;감병민;최영민;김성진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.404-405
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    • 2008
  • In this work, we investigated the effect of the functionalized SWNT-polymer composites for increasing sensitivity and imparting selectivity to nanotube sensors. To do this, CNT -based gas sensors were fabricated with two types of dispersed SWNT solution involving different polymer resin of TEOS (Tetraethyl orthosilicate) or MTMS (Methyl trimethoxysilane) which is blended to adhere to substrate well. As the surfaces of TEOS and MTMS surrounding SWNTs remain functionalized to -OH and $-CH_3$ groups respectively after hardening, gas adsorption will be affected differently according to the type of gases. In the experiment, we examined the response of electrical conductance for alcohol vapour gas. As the result, the conductance in the sensors using TEOS decreased considerably while that of MTMS was nearly invariable.

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