• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.6
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• pp.618-629
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• 2001

This paper presents a result of failure analysis and reliability evaluation for high voltage ceramic capacitors. The failure modes and failure mechanisms were studied in two ways in order to estimate component life and failure rate. The causes of failure mechanisms for zero resistance phenomena under withstanding voltage test in high voltage ceramic capacitors molded by epoxy resin were studied by establishing an effective root cause failure analysis. Particular emphasis was placed on breakdown phenomena at the ceramic-epoxy interface. The validity of the results in this study was confirmed by the results of accelerated testing. Thermal cycling test for high voltage ceramic capacitor mounted on a magnetron were implemented. Delamination between ceramic and epoxy, which might cause electrical short in underlying circuitry, can occur during curing or thermal cycle. The results can be conveniently used to quickly identify defective lots, determine $B_{10}$ life estimation each lot at the level of inspection, and detect major changes in the vendors processes. Also, the condition for dielectric breakdown was investigated for the estimation of failure rate with load-strength interference model.

• The Korean Journal of Rheology
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• v.10 no.4
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• pp.195-201
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• 1998

We have studied the rheological and electrical properties of two types of electrorheological (ER) fluids based on semi-conductive polymers (poly(p-phenylene) and polyaniline). These semi-conductive polymer-based suspensions showed a dramatic increase in viscosity on the application of the static electric field due to the large value of conductivity ratio between particle and medium. The dynamic yield stresses of these ER suspensions exhibited a quadratic dependence on electric field strength at low electric fields and a linear one for high fields. They showed a maximum and then decreased with increasing bulk conductivity of particles. These yield stress behaviors under the static electric field were found to be closely related to the dielectric properties, which is in accord with Maxwell-Wagner interfacial polarization induced by the conductivity effects. In order to achieve better understanding of interfacial polarization effect on ER response and to improve the stability of ER suspension, different kinds of surfactants were employed for controlling the ER activity as well as for enhancing the colloidal stability of suspensions.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.129-134
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• 2020

Moisture infiltration inside the solar cell module, filling of EVA sheet, melting of the frame seal, and deterioration of power generation performance in the module one year after installation are occurring. Whitening phenomenon, electrode corrosion phenomenon, and dielectric breakdown phenomenon are appearing in solar cell module installed in Korea before 5-7 years, leading to deterioration of power generation performance, and big problems for long-term reliability and long life technology are emerging. Therefore, in order to solve these problems, the development of a micro inverter (MiCrco Inverter Converter, MiC) including the function of securing the durability of the solar cell module and monitoring the aging progress and the solar cell based on the monitoring data from the MiC smart monitoring programs have been proposed to determine the aging of modules. In addition, in order to become a highly efficient solar smart monitoring system through systematic operation management through IT convergence with MiC that has enhanced monitoring function of solar cell module, SoC(System On Chip) in micro inverter is the environment for solar cell module. There is a demand for functions that can detect information in a complex manner and perform communication and control when necessary. Based on these requirements, this paper aims to develop SoC-based low-cost MiC smart photovoltaic system technology.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.27-32
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• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.9-15
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• 2004

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about $5.0{\times}10^{-8}\;C/cm^2{\cdot}K$. The figure of merits for voltage responsively and specific detectivity were $3.4{\times}10^{-11}\;C{\cdot}cm/J$ and $5.9{\times}10^{-9}\;C{\cdot}cm/J$, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsively was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsively was maximum 1.84 V/W at 10Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to $f^{-1/2}$. Noise equivalent power and specific detectivity were $2.83{\times}10^{-7}\;W/Hz^{1/2}$ and 3.13{\times}10^5\;cm{\cdot}Hz^{1/2}/W$ the same frequency at 80Hz, respectively.