• Journal of Welding and Joining
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• v.23 no.2
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• pp.81-89
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• 2005

A numerical model for multiple reflection effects of a polarized beam on laser grooving has been developed. The surface of the treated material is assumed to reflect laser irradiation in a fully specular fashion. Combining electromagnetic wave theory with Fresnel's relation, the reflective behavior of a groove surface can be obtained as well as the change of the polarization status in the reflected wave field. The material surface is divided into a number of rectangular patches using a bicubic surface representation method. The net radiative flux far these patch elements is obtained by standard ray tracing methods. The changing state of polarization of the electric field after reflection was included in the ray tracing method. The resulting radiative flux is combined with a set of three-dimensional conduction equations governing conduction losses into the medium, and the resulting groove shape and depth are found through iterative procedures. It is observed that reflections of a polarized beam play an important role not only in increasing the material removal rate but also in forming different final groove shapes. Comparison with available experimental results for silicon nitride shows good agreement for the qualitative trends of the dependence of groove shapes on the electric field vector orientation.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.271-277
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• 2010

In this paper two aspects of the percolation and conductivity of carbon black-filled polyethylene matrix composites will be discussed. Firstly, the percolation behavior, the critical exponent of conductivity of these composites, are discussed based on studying the whole change of resistivity, the relationship between frequency and relative permittivity or ac conductivity. There are two transitions of resistivity for carbon black filling. Below the first transition, resistivity shows an ohmic behavior and its value is almost the same as that of the matrix. Between the first and second transition, the change in resistivity is very sharp, and a non-ohmic electric field dependence of current has been observed. Secondly, the electrical conduction property of the carbon black-filled polyethylene matrix composites below the percolation threshold is discussed with the hopping conduction model. This study investigates the electrical conduction property of the composites below the percolation threshold based on the frequency dependence of conductivity in the range of 20 Hz to 1 MHz. There are two components for the observed ac loss current. One is independent of frequency that becomes prevalent in low frequencies just below the percolation threshold and under a high electrical field. The other is proportional to the frequency of the applied ac voltage in high frequencies and its origin is not clear. These results support the conclusion that the electrical conduction mechanism below the percolation threshold is tunneling.

• Membrane Journal
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• v.4 no.2
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• pp.96-105
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• 1994

Theoretical model for membrane transport of large polye!ectroiyte is presented. When the electric field is applied, the molecular conformation quickly orients in the field direction showing overshooting orientation. the predicted dependence of overshoot time and orientation upon field intensity and molecular size aids to understand the dynamic motion of molecules in membrane transport. The dynamics of the overshoot is associated with self-trapping conformations of molecule. The understanding of these effects supports evidences for the electrophoretic filtration of polydectrolyte in the polymeric membrane. This paper shows one example for molecular study in the theoretical review paper of membrane transport.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.45-49
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• 2008

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

• Bulletin of the Korean Space Science Society
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• 2008.10a
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• pp.23.4-23.4
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• 2008

In March and April 2001, the apogee (~9 Re) of the Polar spacecraft was located near the subsolar magnetopause with its orbital plane nearly parallel to a magnetic meridian plane. Polar electric and magnetic field data acquired during the two-month interval of solar maximum have been used to study fundamental standing Alfven waves near the subsolar meridian plane (magnetic local time = 1000-1400 hours) at magnetic latitudes from the equator to $\pm45$ degrees and at L values between 7 and 12. In the frequency band from 1.5 to 10 mHz, fundamental mode oscillations were identified based on high coherence (more than 0.7) and an approximately 90-degree phase shift between the azimuthal magnetic and radial electric field components. The L dependence of the fundamental frequencies is studied, and the frequencies are compared with those observed near the solar minimum interval (Takahashi et al. 2001). We found that the average frequencies in solar maximum are lower than those in solar minimum by a factor of ~2. This implies that the mass density in solar maximum is higher than that in solar minimum by a factor of ~4. Since there is a positive correlation between solar irradiance and solar activity, we suggest that the ionosphere in solar maximum produces more ions and load magnetic flux tubes with more ions.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1988-1989
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• 2007

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.11a
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• 한국가시화정보학회:학술대회논문집
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• 2007.11a
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• pp.51-54
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• 2007

The induced-charge electroosmosis (ICEO) is a kind of electroosmotic flow which is generated by the electrical charge induced by an externally-applied electric field. That kind of electrokinetic phenomenon provides a nonmechanical technique to handle microscale flows and particles. In this work, we report that the ICEO-like flow is observed around two kinds of circular-cylindrical rod submerged in a dielectric liquid. The conductivity of the solution is varied by adding a surfactant. The flow field is visualized by the PIV method, and average flow speed shows a remarkable dependence on electrical input frequency. Interestingly, the characteristics of the flow are quite different from the conventional ICEO with respect to the flow direction and the locations of center of vortices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.