• 제목/요약/키워드: Electric breakdown

Search Result 685, Processing Time 0.029 seconds

The Insulation Characteristics and The Electric Field Anlaysis by Conducting Particle in $SF_6$ Gas ($SF_6$가스 내 금속이물 존재시 절연특성 및 전계해석)

  • 조국희;이동준;곽희로
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.15 no.5
    • /
    • pp.14-19
    • /
    • 2001
  • This paper describes the influence of conducting particle in the coaxial cylindrical electrodes under alternating voltage condition investigated using breakdown electric field and electro magnetics simulation method. Simulated particle-location in GIS chamber were the particle on electrode, the particle on enclosure and free moving particle. As results, it was founded that in case of breakdown electric field of the GIS chamber, breakdown electric field of particle on electrode was the lowest, that of free moving particle was middle and that of particle on enclosure was the highest. And in case of the electric field analysis with particle locations, electric field of particle on electrode was the highest, that of lifted particle was middle and that of particle on enclosure was the lowest. This results can offer a practical reference on the insulation design of domestic GIS.

  • PDF

A Study on the Breakdown Voltage Characteristics with Process and Design Parameters in Trench Gate IGBT (트렌치 게이트 IGBT 에서의 공정 및 설계 파라미터에 따른 항복 전압 특성에 관한 연구)

  • Shin, Ho-Hyun;Lee, Han-Sin;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.5
    • /
    • pp.403-409
    • /
    • 2007
  • In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

Analysis of Grounding resistance reduction effect of Transmission tower (가공송전선로의 철탑 접지저항 저감효과 분석)

  • Min, Byeong-Wook;Kim, Tai-Young;Park, Bong-Gyu;Choi, Jin-Sung;Kang, Yeon-Woog;Park, Kwang-Uk;Bae, Hyun-Kwon
    • Proceedings of the KIEE Conference
    • /
    • 2011.07a
    • /
    • pp.453-454
    • /
    • 2011
  • With the transmission line the ratio of lightning breakdown the while whole breaking down is occupying a high share with average 72%, is a tendency which increases continuously. In order decreasing the back flashover faults from like this lightning breakdown, it is very important to maintain grounding resistance of tower below target. In this paper, we synthetically analyzed the grounding resistance reduction effect of tower foundation and standard ground connection from construction site, and investigated efficiency for ways to increase the length of counter poise and expand the size of conductivity concrete materials.

  • PDF

Study on the Breakdown Performance of Synthetic Polypropylene Laminated Paper for Application of a HTS Cable (고온초전도 케이블의 응용을 위한 PPLP의 절연파괴 특성연구)

  • Kwag, Dong-Soon;Kim, Young-Seok;Kim, Hae-Jong;Kim, Sang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05e
    • /
    • pp.65-68
    • /
    • 2003
  • In this paper, we researched breakdown characteristics of paper/liquid nitrogen composite insulation system for application of a high temperature superconducting cable. And, we have studied the AC breakdown performance of paper/ice composite insulating system immersed in liquid nitrogen. The electric strength in this paper/ice composite system is higher than that of paper/liquid nitrogen system. Furthermore this system shows a self-healing type breakdown behavior. Among the many kinds of liquid to be immersed and frozen to the ice, deionized water gives the highest electric breakdown strength. The paper/ice composite insulation system is thought to be one of good candidate for the electrical insulating system at cryogenic temperature.

  • PDF

The Effect on Breakdown of the Conducting Particles Between Coaxial Cylindrical Electrodes in $SF_6$ Gas ($SF_6$ 가스 동축원통전극 내의 금속이물이 절연파괴에 미치는 영향)

  • 조국희;권동진;이강수;곽희로
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.12 no.2
    • /
    • pp.85-90
    • /
    • 1998
  • This paper describes the breakdown characteristics of GIS by the free conducting particles under alternating voltage. If the conducting particles are present within the GIS, they can cause decrease in breakdown voltages. Various materials and sizes of free conducting particles were used to study the liftoff electric field and breakdown voltage. The measured lift-off electric fields were compared with the calculated ones for copper, steel and aluminium wire-type conducting particles. As an experimental result, it is shown that the breakdown voltages of the GIS chamber with conducting particles were lower than those without conducting particles, and were markedly dependent on the particle material and the particle sizes. Free conducting particles are important factor in particle-triggered breakdown of the GIS.he GIS.

  • PDF

Breakdown and Destruction Characteristics of the CMOS IC by High Power Microwave (고출력 과도 전자파에 의한 CMOS IC의 오동작 및 파괴 특성)

  • Hong, Joo-Il;Hwang, Sun-Mook;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.56 no.7
    • /
    • pp.1282-1287
    • /
    • 2007
  • We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.

AC Insulation Breakdown Properties of the EMNC to Application of Distribution Molded Transformer (배전용 몰드변압기 적용을 위한 EMNC의 교류절연파괴특성 연구)

  • Park, Jae-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.62 no.5
    • /
    • pp.649-656
    • /
    • 2013
  • A conventional epoxy-microsilica composite (EMC) and an epoxy-microsilica-nanosilicate composite (EMNC) were prepared in order to apply them to mold-type transformers, current transformers (CT) and potential transformers (PT). Nanosilicate was exfoliated in a epoxy resin using our electric field dispersion process and AC insulation breakdown strength at $30{\sim}150^{\circ}C$, glass transition temperature and viscoelasticity were studied. AC insulation breakdown strength of EMNC was higher than that of EMC and that value of EMNC was far higher at high temperature. Glass transition temperature and viscoelasticity property of EMNC was higher than those of EMC at high temperature. These results was due to the even dispersion of nanosilicates among the nanosilicas, which could be observed using transmission electron microscopy (TEM). That is, the nanosilicates interrupt the electron transfer and restrict the mobility of the epoxy chains.

Investigation of Curvature Effect on Planar InP/InGaAs Avalanche Photodiodes for Edge Breakdown Suppression (경계항복 억제를 위한 평판형 InP/InGaAs 애벌랜치 포토다이오드의 곡률 효과 분석)

  • 이봉용;정지훈;윤일구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.206-209
    • /
    • 2002
  • With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

  • PDF

A Simplified Unified Model for Predicting the Dielectrophoretic Aactivity of Magnetic Nanoparticles Aimed at Enhancing the Dielectric Characteristics of Transformer Oil

  • Lee, Jong-Cheol;Jeon, Hong-Pil
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.431.2-431.2
    • /
    • 2014
  • The dielectric breakdown voltage (DBV) is a measure of an insulating fluids ability to withstand a high electric field stress without breaking down. Conventionally, the presence of water or particulate matter in a dielectric fluid comprises the liquid's breakdown strength. However, the addition of magnetic nanoparticles (MNPs) in the base oil can increase the dielectric breakdown voltage of the fluid reversely, if the condition of the added particles in the fluid is in balance with that of keeping down the initiation and propagation of electrical streamers. In this study, we developed a mathematical model by a set of coupled, nonlinear equations using the COMSOL multiphysics finite element simulation suite and calculated the dielectrophoretic activity of magnetic nanoparticles suspended in the presence of electric field, which is the behavior responsible for enhancing the dielectric characteristics of transformer oil, in order to examine how the activity differ in a transformer oil-based magnetic fluid.

  • PDF

Statistical Analysis of wear out in electrically stressed Laser Assisted PECVD SiN Films (Laser Assisted PECVD SiN막의 경시적 열화에 관한 시간 의존성의 통계적 고찰)

  • Kim, Chun-Sub;Kim, Yong-Woo;Yi, Seung-Hwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
    • /
    • 1990.07a
    • /
    • pp.177-179
    • /
    • 1990
  • Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.

  • PDF