• 제목/요약/키워드: ETRI journal

검색결과 4,953건 처리시간 0.027초

Demonstration of Time- and Wavelength-Division Multiplexed Passive Optical Network Based on VCSEL Array

  • Mun, Sil-Gu;Lee, Eun-Gu;Lee, Jie Hyun;Park, Heuk;Kang, Sae-Kyoung;Lee, Han Hyub;Kim, Kwangok;Doo, Kyeong-Hwan;Lee, Hyunjae;Chung, Hwan Seok;Lee, Jong Hyun;Lee, Sangsoo;Lee, Jyung Chan
    • ETRI Journal
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    • 제38권1호
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    • pp.9-17
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    • 2016
  • We demonstrate a time- and wavelength-division multiplexed passive optical network system employing a vertical-cavity surface-emitting laser array-based optical line terminal transceiver and a tunable bidirectional optical subassembly-based optical network terminal transceiver. A packet error-free operation is achieved after a 40 km single-mode fiber bidirectional transmission. We also discuss an arrayed waveguide grating, a photo detector array based on complementary metal-oxide-semiconductor photonics technologies, and low-cost key devices for deployment in access networks.

기관 발행 국제학술지의 성공요인 분석: ETRI Journal 사례를 중심으로 (An Analysis on the Success Factors of International Journal by Institution: With a Special Regard to the Case of the ETRI Journal)

  • 오동근;여지숙;박상후
    • 정보관리학회지
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    • 제32권3호
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    • pp.361-375
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    • 2015
  • 이 연구는 기관 발행 국제학술지의 한 사례로서 한국전자통신연구원에서 발행하는 ETRI Journal이 국제저널로 발전한 요인을 다양한 관점에서 분석하였다. 그 결과 ETRI Journal은 기관의 정책적인 지원과 소속 구성원들의 적극적인 협조로 SCI 등재 준비 3년 만에 SCI에 등재될 수 있었다. 특히 SCI 등재 준비를 시작한 1996년부터 게재논문을 증가되었고, 이와 함께 ETRI 소속 구성원들이 자신들의 논문이나 학술발표에 ETRI Journal의 성과들을 적극적으로 인용하는 등의 공동노력들이 있었음을 분석하였다. 따라서 ETRI Journal의 사례는 기관과 그 구성원의 적극적인 지원과 참여, 관심이 있다면, 기관 발행 학술지는 발행 초기 단계에서는 그 한계나 단점을 장점으로 훌륭하게 활용할 수 있음을 잘 보여주고 있다.

High-Speed Traveling-Wave Photodetector with a 3-dB Bandwidth of 410 GHz

  • Park, Jeong-Woo;Han, Sangpil;Lee, Donghun;Ryu, Han-Cheol;Shin, Jun-Whan;Kim, Namje;Yoon, Young-Jong;Ko, Hyunsung;Park, Kyung Hyun
    • ETRI Journal
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    • 제34권6호
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    • pp.942-945
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    • 2012
  • A high-speed traveling-wave photodetector (TWPD) with an InGaAs absorber is designed and realized. The bandwidth of the TWPD is measured using electro-optic sampling techniques. The bandwidth is 410 GHz, which shows that the RC limitation is overcome. While the TWPD shows a low responsivity of 0.06 A/W at 1,550 nm, this value can be improved through further optimization of the structure without a sacrifice in bandwidth.

Scalable Network Architecture for Flow-Based Traffic Control

  • Song, Jong-Tae;Lee, Soon-Seok;Kang, Kug-Chang;Park, No-Ik;Park, Heuk;Yoon, Sung-Hyun;Chun, Kyung-Gyu;Chang, Mi-Young;Joung, Jin-Oo;Kim, Young-Sun
    • ETRI Journal
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    • 제30권2호
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    • pp.205-215
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    • 2008
  • Many control schemes have been proposed for flow-level traffic control. However, flow-level traffic control is implemented only in limited areas such as traffic monitoring and traffic control at edge nodes. No clear solution for end-to-end architecture has been proposed. Scalability and the lack of a business model are major problems for deploying end-to-end flow-level control architecture. This paper introduces an end-to-end transport architecture and a scalable control mechanism to support the various flow-level QoS requests from applications.

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A Novel Process for Fabricating High Density Trench MOSFETs for DC-DC Converters

  • Kim, Jong-Dae;Roh, Tae-Moon;Kim, Sang-Gi;Park, Il-Yong;Yang, Yil-Sulk;Lee, Dae-Woo;Koo, Jin-Gun;Cho, Kyoung-Ik;Kang, Young-Il
    • ETRI Journal
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    • 제24권5호
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    • pp.333-340
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    • 2002
  • We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resulting increase in cell density and current driving capability as well as cost-effective production capability. We were able to obtain a higher breakdown voltage with uniform oxide grown along the trench surface. The channel density of the trench DMOSFET with a cell pitch of 2.3-2.4 ${\mu}m$ was 100 Mcell/$in^2$ and a specific on-resistance of 0.41 $m{\Omega}{\cdot}cm^2$ was obtained under a blocking voltage of 43 V.

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Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

  • Shin, Jae-Heon;Lee, Ji-Su;Hwang, Chi-Sun;KoPark, Sang-Hee;Cheong, Woo-Seok;Ryu, Min-Ki;Byun, Chun-Won;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • 제31권1호
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    • pp.62-64
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    • 2009
  • We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

Transparent OLED Lighting Panel Design Using Two-Dimensional OLED Circuit Modeling

  • Han, Jun-Han;Moon, Jaehyun;Cho, Doo-Hee;Shin, Jin-Wook;Joo, Chul Woong;Hwang, Joohyun;Huh, Jin Woo;Chu, Hye Yong;Lee, Jeong-Ik
    • ETRI Journal
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    • 제35권4호
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    • pp.559-565
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    • 2013
  • In this work, we develop a simulation method to predict a two-dimensional luminance distribution method using a circuitry simulation. Based on the simulation results, we successfully fabricate large area ($90mm{\times}90mm$) transparent organic light-emitting diode panels with high luminance uniformity.

IDNet: Beyond All-IP Network

  • Jung, Heeyoung;Lim, Wan-Seon;Hong, Jungha;Hur, Cinyoung;Lee, Joo-Chul;You, Taewan;Eun, Jeesook;Kwak, Byeongok;Kim, Jeonghwan;Jeon, Hae Sook;Kim, Tae Hwan;Chun, Woojik
    • ETRI Journal
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    • 제37권5호
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    • pp.833-844
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    • 2015
  • Recently, new network systems have begun to emerge (for instance, 5G, IoT, and ICN) that require capabilities beyond that provided by existing IP networking. To fulfill the requirements, some new networking technologies are being proposed. The promising approach of the new networking technology is to try to overcome the architectural limitations of IP networking by adopting an identifier (ID)-based networking concept in which communication objects are identified independently from a specific location and mechanism. However, we note that existing ID-based networking proposals only partially meet the requirements of emerging and future networks. This paper proposes a new ID-based networking architecture and mechanisms, named IDNet, to meet all of the requirements of emerging and future networks. IDNet is designed with four major functional blocks-routing, forwarding, mapping system, and application interface. For the proof of concept, we develop numeric models for IDNet and implement a prototype of IDNet.

ETRI-NET 소개

  • 박희용
    • ETRI Journal
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    • 제8권3호
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    • pp.129-138
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    • 1986
  • ETRI-NET(ETRI Local Area Network)은 종합 정보통신 시스팀 기술개발 및 연구소 업무 자동화를 위해서 한국전자통신 연구소에 설치 운용중에 있는 광대역 근거리 통신망이다. 본고에서는 ETRI-NET의 시스팀 구성, 주요장비, 장비 설치현황, LAN 이용방법, 타 network과의 접속 등에 관해서 기술한다.

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