• Title/Summary/Keyword: EOT analysis

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Planning and Scheduling using EOT Claim analysis (EOT 클레임 분석 기법을 활용한 공정관리)

  • Woo, Han Kil
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2021.11a
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    • pp.248-249
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    • 2021
  • Planning and Scheduling in Korean has been developed from Bar Chart to CPM, integrated management and EVM were attempted. As growing of overseas projects, Scheduler was also recognized as important one. However, the reality is that most Korean construction projects still remain in the preparation of construction plan and construction schedule in 1990s. The global Planning and Scheduling trend is EOT claims. I would like to understand the global trend of EOT claims and EOT analysis, and to find out Planning and Scheduling measures to successfully promote EOT claims.

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Optimal Sensor Allocation for Health Monitoring of Roller-Coaster Structure (롤러코스터의 모니터링을 위한 최적 센서 구성)

  • Heo, Gwang Hee;Jeon, Seung Gon;Park, In Joon
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.15 no.4
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    • pp.165-174
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    • 2011
  • This research aims at the optimal constitution of sensors required to identify the structural shortcoming of roller-coaster. In this research we analyzed the dynamic characteristics of roller-coaster by three dimensional FE modelling, decided on the appropriate location and number of sensors through optimal transducer theory, abstracted the mathematical value of modal features before and after damage on the basis of optimally placed and numbered sensors. and then presented it as a primary information about the basic structure which would be applied to damage estimation. As a target structure, the roller-coater at Seoul Children's Grand Park was chosen and built as a model reduced by one twentieth in size. In order to consider the Kinetics features particular to the roller-coaster structure, we made an exact three-dimensional FE modelling for the model structure by means of Spline function. As for the proper location and number of sensors, it was done by applying EIM and EOT. We also estimated the damage from the combination of strength, flexibility, and model corelation after abstracting the value of modal features. Finally the optimal transducer theory presented here in this research was proved to be valid, and the structural damage was well identified through changes in strength and flexibility. As a result, we were able to present the optimal constitution of sensors needed for the analysis of dynamic characteristics and the development of techniques in dynamic characteristics, which would ultimately contribute to the development of health monitoring for roller-coaster.

Thermal Stability and Electrical Properties of HfOxNy Gate Dielectrics with TaN Gate Electrode

  • Kim Jeon-Ho;Choi Kyu-Jeong;Seong Nak-Jin;Yoon Soon-Gil;Lee Won-Jae;Kim Jin-dong;Shin Woong-Chul;Ryu Sang-Ouk;Yoon Sung-Min;Yu Byoung-Gon
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.3
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    • pp.34-37
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    • 2003
  • [ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

Maneuverability Improvement of EOTS by Driving the Outer Gimbal First (외부짐발 선구동에 의한 EOTS의 기동성 개선)

  • Yim, Jong-Bin;Kim, Sung-Su;Lyou, Joon
    • Journal of Institute of Control, Robotics and Systems
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    • v.19 no.10
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    • pp.873-878
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    • 2013
  • An EOTS (Electro-Optical Tracking System) provides stabilized images while tracking a moving target. This paper presents a novel concept of driving the outer gimbal first for improving the maneuverability of an EOTS, contrary to the conventional inner gimbal mode. It has the advantages of faster positioning performance and stable operation in Nadir-point. Analysis of frequency responses reveal that the present scheme results in a wider control bandwidth and larger gain margin, compared to those of the previous one. The actual experimental results confirm that the maneuvering is stable although the input command has a large angular acceleration.

Improved Electrical Properties by In Situ Nitrogen Incorporation during Atomic Layer Deposition of HfO2 on Ge Substrate (Ge 기판 위에 HfO2 게이트 산화물의 원자층 증착 중 In Situ 질소 혼입에 의한 전기적 특성 변화)

  • Kim, Woo-Hee;Kim, Bum-Soo;Kim, Hyung-Jun
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.14-21
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    • 2010
  • Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

Analysis of PMOS Capacitor with Thermally Robust Molybdenium Gate (열적으로 강인한 Molybdenium 게이트-PMOS Capacitor의 분석)

  • Lee, Jeong-Min;Seo, Hyun-Sang;Hong, Shin-Nam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.7
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    • pp.594-599
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    • 2005
  • In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

An Evaluating Analysis of Installing Type of EOTS for The Boramae Fighter (보라매 전투기 전자광학타겟팅 장비 탑재형태의 분석 평가)

  • Kang, Chi-Hang;Oh, Seung-Hyun;Kang, Hee-Chang;Cheon, Ho-Jeong;Lee, Beom-Seok
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.40 no.10
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    • pp.910-915
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    • 2012
  • In this paper, the loading methods of EOTS for an exploratory developing fighter were analysed by the technical characteristics of it's operation, maintenance, engineering technology and development cost. By the analysis of operational ability evaluation, the internal type had the merits of stealth function, but the external loading type was preferable to certificate the accessibility, install/detach, compatibility and interoperability with the existing fighter aircraft. From the results of 17 items of technology and development cost evaluation, we found out that the internal type had the advantage of small sizing lightweight, but the external type was highly estimated in the field of application of domestic technology, cost reduction and technical stability for achievement of performance.

Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$/Ar Plasma ($BCl_3$/Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.168-168
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    • 2008
  • Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

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Thermal Stress Analysis of the Disposal Canister for Spent PWR Nuclear Fuels (가압경수로 고준위폐기물 처분용기의 열응력 해석)

  • 권영주;하준용;최종원
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.15 no.3
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    • pp.471-480
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    • 2002
  • In this paper, the thermal stress analysis of spent nuclear fuel disposal canister in a deep repository at 500 m underground is carried out for the basic design of the canister. Since the nuclear fuel disposal usually emits much heat, a long term safe repository at a deep bedrock is used. Under this situation, the canister experiences the thermal load due to the heat generation of spent nuclear fuels in the basket. Hence, in this paper the thermal stress analysis is executed using the finite element method. The finite clement code Eot the analysis Is not written directly, but a commercial code, NISA, is used because of the complexity of the structure and the large number of elements required for the analysis. The analysis result shows that even though the thermal stress is added to the stress generated by the hydrostatic underground water pressure and the swelling pressure of the bentonite buffer, the total stress is still smaller than the yield stress of the cast iron. Hence, the canister is still structurally safe when the thermal loads we included in the external loads applied on the canister.