• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Korean Chemical Engineering Research
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• 제49권2호
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• pp.175-180
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• 2011

본 연구에서는, 전자의 재결합을 감소시켜 염료 감응형 태양전지의 효율을 향상시키고자 다른 에너지 준위를 갖는 $TiO_{2}$와 $V_{2}O_{5}$을 혼합하여 $TiO_{2}/V_{2}O_{5}$ 혼성반도체를 제조하였다. 또한 제조된 $TiO_{2}/V_{2}O_{5}$ 혼성반도체는 페인트 쉐이커를 이용하여 회쇄 후 염료 감응형 태양전지의 제조 및 전기화학적 특성 평가를 함으로써 $V_{2}O_{5}$ 혼합 및 회쇄 효과가 전지효율에 미치는 영향을 고찰하였다. I-V 곡선을 통하여 측정된 염료 감응형 태양전지의 효율은 $V_{2}O_{5}$ 혼합 및 회쇄 효과에 의하여 2.9에서 5.7%로, $TiO_{2}$ 염료 감응형 태양전지에 비하여 약 2배 증가하였다. 이러한 결과는 $TiO_{2}$의 전도대보다 낮은 전도대를 갖는 $V_{2}O_{5}$의 도입으로 효과적으로 전자를 FTO 유리에 전달하여, 전자가 염료 및 전해질과의 재결합을 감소하게 되어 에너지 전환효율이 증가된 것으로 여겨 진다. 또한, 임피던스 결과도 회쇄된 $TiO_{2}/V_{2}O_{5}$ 혼성 반도체의 효과를 나타내는 $TiO_{2}$/염료/전해질 계면의 저항감소를 보여 주었다.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.581-588
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• 2007

To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

• 분석과학
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• 제28권5호
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• pp.341-346
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• 2015

In order to understand the counter anionic effects in a non-aqueous vanadium redox flow battery (VRFB), we synthesized four types of electrolyte salts (1-ethyltriethamine tertafluoroborate, [E-TEDA]⁺[BF₄]⁻, 1-ethyltriethamine hexafluorophosphate, [E-TEDA]⁺[PF₆]⁻, 1-butyltriethylamine tertafluoroborate, [B-TEDA]⁺[BF₄]⁻, and 1-buthyltriethamine hexafluorophosphate [B-TEDA]⁺[PF₆]⁻) by counter anion exchange reaction after the SN₂ reaction. We confirmed the successful synthesis of the electrolyte salts [E-TEDA]⁺[Br]⁻ and [B-TEDA]⁺[Br]⁻ via ¹H-NMR spectroscopy and GC-mass analysis before the counter anion exchange reaction. The electric potential of the vanadium acetylacetonate, V(acac)₃, as an energy storage chemical was shown to be 2.2 V in the acetonitrile solvent with each of the [E-TEDA]⁺[BF₄]⁻, [E-TEDA]⁺[PF₆]⁻, [B-TEDA]⁺[BF₄]⁻, and [B-TEDA]⁺[PF₆]⁻ electrolyte salts. In a non-aqueous VRFB with a commercial Neosepta AFN membrane, the maximum voltages reached 1.0 V and 1.5 V under a fixed current value of 0.1 mA in acetonitrile with the [E-TEDA]⁺[BF₄]⁻ and [E-TEDA]⁺[PF₆]⁻ electrolyte salts, respectively. The maximum voltage was 0.8 V and 1.1 V under a fixed current value of 0.1 mA in acetonitrile with the [B-TEDA]⁺[BF₄]⁻ and [B-TEDA]⁺[PF₆]⁻ electrolyte salts, respectively. From these results, we concluded that in the non-aqueous VRFB more of the [PF₆]⁻ counter anion than the [BF₄]⁻ counter anion was transported onto the commercial Neosepta AFN anion exchange membrane.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권2호
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• pp.219-229
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• 2012

In the course of feasibility study the necessity of implementing electrochemical methods as an inline metrology technique to characterize semiconductor nano structures for a Deep Trench Dynamic Random Access Memory (DT-DRAM) (e.g. ultra shallow junctions USJ) was discussed. Hereby, the state of the art semiconductor technology on the advantages and disadvantages of the most recently used analytical techniques for characterization of nano electronic devices are mentioned. Various electrochemical methods, their measure relationship and correlations to physical quantities are explained. The most important issue of this paper is to prove the novel usefulness of the electrochemical micro cell in the semiconductor industry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.636-639
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• 1993

This paper is discribed the results of insulation characteristic tests that are DC leakage current, test, tan${\delta}$ test, AC breakdown test and observation of tree in the used 6.6kV CV cables. In the correlation of these tests, the tan${\delta}$ test stands for the main deterioration factor of cable insulation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.64.2-64.2
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• 2011

a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• 한국군사과학기술학회지
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• 제11권6호
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• pp.74-80
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• 2008

Analysis of the electromagnetic environment on topside of a ship is needed for optimal arrangement of all kinds of antennas to be installed on the shipboard in order to minimize the probability of EMI of equipment and subsystems in real ship after construction phase. In this paper we analyze the characteristics of electric-fields such as radiation patterns and near E-fields of V/UHF antennas installed on a shipboard. We compare simulated results with measurements on the real ship for near E-fields to verify the reliability of the computed electromagnetic environment. Although there are various factors causing errors such as cable loss and impedance mismatching etc. when measuring near E-field, both data show similar trends in the range of the acceptable tolerance.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.