• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.189.1-189.1
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• 2008

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.68-75
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• 2002

It is observed the characteristic of the microwave air plasma in the wide range of the operating pressure, 1 mTorr ~ 760 Torr. The microwave air plasma was generated by an AC-type microwave source manufactured with a magnetron taken from a commertial microwave oven and the input power was fixed at 370 W. Characteristics of the plasmas were observed by an injection Langmuir probe and an OES(Optical Emission Spectroscopy). The breakdown electric field is drastically changed at 500 mTorr. For < 500 mTorr, the ratio of the breakdown electric field and the pressure decreased inversely to the pressure, $5.7\times10^4$V/m-Torr.However, the ratio increased linearly as 43 V/m-Torr for the operating pressure, > 500 mTorr. The minimum breakdown electric field was observed about 12. kV/m at 500 mTorr. It corresponds that the input frequency equals to the collision frequency. The effective collision cross section of the air at this pressure was calculated as $9.23\times10^{-l6}\textrm{cm}^2$.The results of the OES measurement revealed that the main ions were composed of the oxygen, argon, and nitrogen for > 500 mTorr. In contrast, only oxygen and argon ions were dominated for < 500 mTorr. ion temperature of oxygen (O(II)) in the air was decreased from about 1.2 eV to 0.5 eV as the pressure increased. Langmuir probe data shows that the plasma density for < 500 mTorr was higher that for > 500 mTorr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.84-85
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• 2009

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7(A)$, $\Gamma_6(B)$, and $\Gamma_7(C)$ to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)$ - $(9.43\times10^{-3})T^2$/(2676+T). $E_g(0)$ was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of $p-CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• Journal of the Korean Chemical Society
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• v.55 no.2
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• pp.177-182
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• 2011

A diketo-type ligand was synthesized by the Knoevenagel condensation reaction of thiophene-2-aldehyde with acetylacetone, subsequently its transition metal complexes with Cu(II), Ni(II), and Co(II) chlorides were also prepared. All the complexes were characterized by various physico-chemical methods. The molar conductivity data reveals ionic nature for the complexes. The electronic spectrum and the EPR values suggest square planar geometry for the Cu(II) ion. Interaction of the Cu(II) complex with CTDNA (calf thymus DNA) was studied by absorption spectral method and cyclic voltammetry. The $k_{obs}$ values versus [DNA] gave a linear plot suggesting psuedo-first order reaction kinetics. The cyclic voltammogram of the Cu(II) complex reveals a quasi-reversible wave attributed to Cu(II)/Cu(I) redox couple for one electron transfer with $E_{1/2}$ values -0.240 V and -0.194 V. respectively. On addition of CTDNA, there is a shift in the $E_{1/2}$ values 168 mV and 18 mV respectively and decrease in Ep values. The shift in $E_{1/2}$ values in the presence of CTDNA suggests strong binding of Cu(II) complex to the CTDNA.

• Journal of the Korean Society of Radiology
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• v.10 no.5
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• pp.337-341
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• 2016

We measured the neutron capture cross-section of natural Sm(n,${\gamma}$) reaction in the energy regions from 0.003 to 10 eV. The 46-MeV electron linear accelerator of Research Reactor Institute, Kyoto University was used for generating a continuous neutron source. The neutron time-of-flight method was adopted for energy measurement. An assembly of BGO($Bi_4Ge_3O_{12}$) scintillators composed of 12 pieces of BGO crystals measured prompt gamma rays from Sm(n,${\gamma}$) reaction. The BGO assembly was located at a distance of $12.7{\pm}0.02m$ from the neutron source. In order to determine the neutron flux impinging on the Sm, the $^{10}B(n,{\alpha}{\gamma})^7Li$ standard cross-section were used. Natural Sm(n,${\gamma}$) reaction measurement result of the neutron capture cross-section was compared with the results of evaluation of the BROND-2.2 and the previous experimental data of J. C. Chou and V. N. Kononov.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• Bulletin of the Korean Chemical Society
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• v.16 no.2
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• pp.101-104
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• 1995

In an attempt to understand the nature of hyperthermal ion-surface collisions, noble gas ion beams (He+, Ne+, Ar+, and Xe+) are scattered from a Si(100) surface for collision energies of 20-300 eV and for 45°incidence angle. The scattered ions are mass-analyzed using a quadrupole mass spectrometer and their kinetic energy is measured in a time-of-flight mode. The scattering event for He+ and Ne+ can be approximated as a sequence of quasi-binary collisions with individual Si atoms for high collision energies (Ei > 100 eV), but it becomes of a many-body nature for lower energies, Ar+ and Xe+ ions undergo mutliple large impact parameter collisions with the surface atoms. The effective mass of a surface that these heavy ions experience during the collision increases drastically for low beam energies.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.354-361
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• 1999

The films annealed after physical deposition of titanium and chemical deposition of amorphous silicon by plasma were formed Si-rich titanium silicide with a good quality of crystallinity and had the various lattice structures due to orientation of lattices for epitaxy growth during annealing process. Band gap of the titanium silicide had 1.14~1.165 eV and the films annealed after chemical deposition of a-Si:H by plasma were influenced by a-Si and the dangling bond offered by desorption of hydrogen. Urbach tail ($E_0$) of the films annealed after physical deposition of Ti was nearly constant within a range of 0.045~0.05 eV, and the number of defect in films annealed after chemical deposition of a-Si:H by plasma was about 2~3 times more than that in annealed Ti/Si films.