• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.226-230
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• 2003

In this thesis I analyzed that V5.2 protocol function is effective to fulfill all of the services that are provided at the existing local exchange. I analyzed this in five methods that refer to ETSI inside patronage. I experimented turnaround time by Start-up method and verified V5.2 protocol function when Start-up. Also I confirmed stability of system by the reconstruction-ability experiment related E1 switch over. I verified V5.2 protocol function through PSTN call process that uses a special service test and local call simulator. As a result of experiment, I confirmed the best method when simultaneous Start-up. V5.2 protocol function was excellent and It becomes switch over at 1/1000 seconds when E1 is out of service. V5.2 protocol function was effective to fulfill all of the special services that are provided at local exchange and its long call process ability was superior to KT standard with 4 fails in 20000 calls. Through the experiment, it was proved that V5.2 interface will become a significant element of communication network when after LE side expanse of v5 interface ID with TDX-100 exchanger and the AN occurrences OOS by message transmission limit and call disconnect when E1 switch over are improved.

• The Journal of the Korea Contents Association
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• v.5 no.5
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• pp.133-139
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• 2005

The neutron capture cross section of $^{99}Tc$ has been measured relative to the $^{10}B(n,\gamma)$ standard cross section by the neutron time-of-flight(TOF) method in the energy range of 0.007 eV to 47 keV using a 46-MeV electron linear accelerator(linac) at the Research Reactor. Institute, Kyoto University(KURRI). In order to experimentally prove the result obtained, the supplementary cross section measurement has been made from 0.3 eV to 1 keV using the Kyoto University Lead stowing-down spectrometer (KULS) coupling to the linac. The relative measurement by the TOF method has been normalized to the reference value(20.01 b) at 0.0253 eV and the KULS measurement to that by the TOF method. The existing experimental data and the evaluated capture cross sections in ENDF/B-VI, JENDL-3.2, and JEF-2.2 have been compared with the current measurements by the linac TOF and the KULS experiments.

• Bulletin of the Korean Mathematical Society
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• v.45 no.1
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• pp.11-21
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• 2008

A graph G = (V, E) is called super edge-magic if there exists a one-to-one map $\lambda$ from V $\cup$ E onto {1,2,3,...,|V|+|E|} such that $\lambda$(V)={1,2,...,|V|} and $\lambda(x)+\lambda(xy)+\lambda(y)$ is constant for every edge xy. In this paper, we investigate whether some families of graphs are super edge-magic or not.

• Journal of Microbiology
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• v.44 no.5
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• pp.537-547
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• 2006

This study was designed to determine whether or not Vibrio vulnificus metalloprotease VvpE can promote iron uptake via the proteolytic cleavage of human hemoglobin. We found that V. vulnificus utilized hemoglobin as an iron source more efficiently via the vulnibactin-mediated iron-uptake system than via the HupA-mediated iron-uptake system and, of the proteases produced by V. vulnificus, VvpE was found to be the only protease capable of destroying hemoglobin. However, VvpE expression, on both the transcriptional and protein levels, was suppressed in iron-limited media. However, vvpE transcription, but not extracellular VvpE production, was reactivated by the addition of hemoglobin or inorganic iron into iron-limited media. Moreover, vvpE transcription began only in the late growth phase when V. vulnificus had already consumed most of the iron for growth. In addition, neither vvpE mutation nor in trans vvpE complementation affected the ability of V. vulnificus to acquire iron or to grow in iron-limited media or in cirrhotic ascites containing hemoglobin. Hemoglobin added into iron-limited media was not destroyed, but gradually formed an insoluble aggregate during culture; this aggregation of hemoglobin occurred regardless of vvpE mutation or complementation. These results indicate that VvpE is not required for efficient iron uptake from hemoglobin. On the contrary, hemoglobin or iron is required for efficient vvpE transcription. In addition, a discrepancy exists between vvpE transcription and extracellular VvpE production in iron-limited media containing inorganic iron or hemoglobin, which suggests that additional unknown posttranscriptional events may be involved in the extracellular production of VvpE.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1914-1924
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• 2014

In this paper, a small-area cell array method of reducing number of SL drivers requiring large layout areas, where the SL drivers supplying programming currents are routed in the row direction in stead of the column direction for eFuse OTP memory IPs having less number of rows than that of columns such as a cell array of four rows by eight columns, and a core circuit are proposed. By adopting the proposed cell array and core circuit, the layout area of designed 32-bit eFuse OTP memory IP is reduced. Also, a V2V ($=2V{\pm}10%$) regulator necessary for RWL driver and BL pull-up load to prevent non-blown eFuse from being blown from the EM phenomenon by a big current is designed. The layout size of the designed 32-bit OTP memory IP having a cell array of four rows by eight columns is 13.4% smaller with $120.1{\mu}m{\times}127.51{\mu}m$ ($=0.01531mm^2$) than that of the conventional design with $187.065{\mu}m{\times}94.525{\mu}m$ ($=0.01768mm^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.707-711
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• 2013

Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage ($V_{gs}=0[V]$ or $V_{gs}=3.5[V]$). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at $40^{\circ}C$). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy($U_a$), $U_a$ = 0.06714[eV] at the NOx gas concentration of 8[ppm], $U_a$ = 0.06769[eV] at 16[ppm], $U_a$ = 0.06847[eV] at 24[ppm] and $U_a$ = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].