• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Journal of the Korean Society of Radiology
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• v.7 no.3
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• pp.245-249
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• 2013

Neutron sources from photonuclear reaction with 46-MeV electron linear accelerator at Research Reactor Institute, Kyoto University used for resonance energy measurement of natural tantalum. BGO($Bi_4Ge_3O_{12}$) scintillation detectors used for measurement of the prompt gamma ray from the natural tantalum sample. The BGO spectrometer was composed geometrically as total energy absorption detector. The electric signal from the spectrometer was analyzed for TOF(Time-of-Flight) spectrum which is used identification of neutron capture resonance energy. In this study, the neutron energy region is from 1 to 200 eV, because of strong X-ray effect produced photonuclear reaction in Ta target, the measurement was performed to below 1 keV energy region. The resonance energy was compared with the evaluated values(ENDF/B-VI, Mughabghab). All of the resonances from 4.28 ~ 200 eV were seen in the present measurement except 144.3 eV resonance.

• Journal of Microbiology and Biotechnology
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• v.30 no.10
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• pp.1495-1499
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• 2020

The study of climate and respiratory viral infections using big data may enable the recognition and interpretation of relationships between disease occurrence and climatic variables. In this study, real-time reverse transcription quantitative PCR (qPCR) methods were used to identify Human respiratory coronaviruses (HCoV). infections in patients below 10 years of age with respiratory infections who visited Dankook University Hospital in Cheonan, South Korea, from January 1, 2012, to December 31, 2018. Out of the 9010 patients who underwent respiratory virus real-time reverse transcription qPCR test, 364 tested positive for HCoV infections. Among these 364 patients, 72.8% (n = 265) were below 10 years of age. Data regarding the frequency of infections was used to uncover the seasonal pattern of the two viral strains, which was then compared with local meteorological data for the same time period. HCoV-229E and HCoV-OC43 showed high infection rates in patients below 10 years of age. There was a negative relationship between HCoV-229E and HCoV-OC43 infections with air temperature and wind-chill temperatures. Both HCoV-229E and HCoV-OC43 rates of infection were positively related to atmospheric pressure, while HCoV-229E was also positively associated with particulate matter concentrations. Our results suggest that climatic variables affect the rate in which children below 10 years of age are infected with HCoV. These findings may help to predict when prevention strategies may be most effective.

• Herbal Formula Science
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• v.19 no.1
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• pp.35-49
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• 2011

Objectives : This study aims to reveal the characteristics of formulas in "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$. Methods : For that objectives, We analyzes formulas in "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$. In the text, 132 formulas were described. To comprehend the formulas, we classified them as several bases. Results : After those analyses, we bring to a conclusion as follows. 1. 30 formulas are described that treated convulsive diseases (j$\={i}$ngf$\={e}$ng, 惊風). Next, g$\={a}$n(疳), parasite infection, diarrhea/dysentery, dermatosis and etc were in the order. 2. Classified by the formulation, Yu$\'{\a}$nj$\`{i}$(圓劑) was the best(70 kinds of formulas, 53%). S$\v{a}$nj$\`{i}$(散劑) was a form of 41 formulas(31%). T$\={a}$ngj$\`{i}$(湯劑) and g$\={a}$oj$\`{i}$(膏劑) were a form of 5 formulas each. 10 formulas were assumed the form of w$\`{a}$iy$\`{o}$ngj$\`{i}$(外用劑). 3. We researched in-depth analysis of Yu$\'{\a}$nj$\`{i}$. As a results, dosage, additive(輔料) and the time to take of Yu$\'{\a}$nj$\`{i}$ were decomposed. Also, the formulas that treated convulsive diseases were analyzed by the herbs classification. Conclusions : Though the formulas that treated convulsive diseases were hard to application at local clinic, overall nosology of pediatrics was reflected comparatively. "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$ was expected to play a role for reconsideration of formulas' formulation.

• Bulletin of the Korean Mathematical Society
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• v.22 no.2
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• pp.121-126
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• 1985

D.K. Harrison [5] has shown that if R and S are fields of characteristic different from 2, then two Witt rings W(R) and W(S) are isomorphic if and only if W(R)/I(R)$^{3}$ and W(S)/I(S)$^{3}$ are isomorphic where I(R) and I(S) denote the fundamental ideals of W(R) and W(S) respectively. In [1], J.K. Arason and A. Pfister proved a corresponding result when the characteristics of R and S are 2, and, in [9], K.I. Mandelberg proved the result when R and S are commutative semi-local rings having 2 a unit. In this paper, we prove the result when R and S are 2-fold full rings. Throughout this paper, unless otherwise specified, we assume that R is a commutative ring having 2 a unit. A quadratic space (V, B, .phi.) over R is a finitely generated projective R-module V with a symmetric bilinear mapping B: V*V.rarw.R which is nondegenerate (i.e., the natural mapping V.rarw.Ho $m_{R}$ (V, R) induced by B is an isomorphism), and with a quadratic mapping .phi.:V.rarw.R such that B(x,y)=(.phi.(x+y)-.phi.(x)-.phi.(y))/2 and .phi.(rx)= $r^{2}$.phi.(x) for all x, y in V and r in R. We denote the group of multiplicative units of R by U(R). If (V, B, .phi.) is a free rank n quadratic space over R with an orthogonal basis { $x_{1}$, .., $x_{n}$}, we will write < $a_{1}$,.., $a_{n}$> for (V, B, .phi.) where the $a_{i}$=.phi.( $x_{i}$) are in U(R), and denote the space by the table [ $a_{ij}$ ] where $a_{ij}$ =B( $x_{i}$, $x_{j}$). In the case n=2 and B( $x_{1}$, $x_{2}$)=1/2, we reserve the notation [ $a_{11}$, $a_{22}$] for the space.the space.e.e.e.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.299-303
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• 1993

Erbium metal을 불순물로서 2mol% 첨가한 TlGaS2:Er3+ 단결정을 수평전기로에서 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 결정은 층상으로 이루어진 monoclinic 구조였으며, 10K에서 간접전이형 및 직접전이형 energy band gap은 각각 2.55eV, 2.57eV이었고, Er3+ 이온에 의한 두 개의 불순물 광흡수 peak가 524.9nm와 656.4nm에서 관측되었다. Themally stimulated current(TSC)를 측정하여 0.21eV와 0.38eV의 donor 준위와 0.71eV의 accptor 준위를 구하였다. 10K에서 측정된 photoluminescence(PL) spectrum에서는 632nm와 759nm에서 D-A pair에 의한 broad한 peak와 552, 559, 666, 813, 816, 827nm에서 Er3+ 이온에 의한 sharp한 peak들이 나타났다.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

• Communications of the Korean Mathematical Society
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• v.9 no.4
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• pp.837-846
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• 1994

Let A denote a unital normed algebra over a field K = R or C and let e be the identity of A. Given $a \in A$ and $x \in A$ with $\Vert x \Vert = 1$, let $$ V(A, a, x) = {f(ax) : f \in A', f(x) = 1 = \Vert f \Vert}. $$ Then the (Bonsall and Duncan) numerical range of an element $a \in A$ is defined by $$ V(a) = \cup{V(A, a, x) : x \in A, \Vert x \Vert = 1}, $$ where A' denotes the dual of A. In [2], $V(a) = {f(a) : f \in A', f(e) = 1 = \Vert f \Vert}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.