• Laser Solutions
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• v.8 no.2
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• pp.21-32
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• 2005

The excimer laser ablation of a polymer occurs by the excitation of chemical bonds to energy levels that are above the dissociation energy. In this process, however, fragmented debris is finally ejected explosively by the scission of bonds and accumulates on the material surface. In the present work, a process for eliminating surface debris contamination generated by the laser ablation of a polymer is developed. The proposed approach for removing surface debris utilizes an erasable ink pasted on a polymide. The ink pasted polyimide is ablated by KrF excimer laser. The surface debris ejected from the polyimide is then combined with the ink layer on the polymer. Finally, both the surface debris and the ink layer are removed using adhesive tape or alcohol solvent. The results suggest that the erasable ink method is a simple, low cost, and extremely effective debris eliminating process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.603-604
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.941-942
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2969-2973
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• 2014

A new process to fabricate a composite LSCF-Ag cathode material for SOFCs by electron beam (e-beam) irradiation process has been suggested for operation under intermediate temperature range of $600-700^{\circ}C$. A composite LSCF-Ag cathode with uniformly coated Ag nanoparticles on the surface of the LSCF material was prepared by a facile e-beam irradiation method at room temperature. The morphology of the composite LSCF-Ag material was analyzed using a TEM, FE-SEM, and EDS. The prepared composite LSCF-Ag material can play a significant role in increasing the electro-catalytic activities and reducing the operating temperature of SOFCs. The performance of a tubular single cell prepared using the composite LSCF-Ag cathode, YSZ electrolyte and a Ni/YSZ anode was evaluated at reduced operating temperature of $600-700^{\circ}C$. The micro-structure and chemical composition of the single cell were investigated using a FE-SEM and EDS.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.138.1-138.1
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• 2013

We present the low temperature (${\leq}1,000^{\circ}C$) vacuum sublimation behavior of an e-beam evaporative deposited on a SiC film and a method to reduce the vacuum sublimation through an ion beam process. The density of the SiC film deposited using the e-beam evaporation method was ~60% of the density of the bulk source material. We found that the sublimation became appreciable above ${\sim}750^{\circ}C$ under $1.5{\times}10^{-5}$ torr pressure and the sublimation rate increased with an increase in temperature, reaching ~70 nm/h at $950^{\circ}C$ when the coated sample was heated for 5 h. When the film was irradiated with 70 keV N+ ions prior to heating, the sublimation rate decreased to ~23 nm/h at a fluence of $1{\times}10^{17}\;ions/cm^2$. However, a further increase in fluence beyond this value or an extended heating period did not change (decrease or increase) the sublimation rate any further.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.134-139
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• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.2 s.233
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• pp.228-231
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• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• Journal of the Korean GEO-environmental Society
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• v.13 no.6
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• pp.51-57
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• 2012

This study investigated on the photolytic degradation of Triclosan by E-beam process. The optimization of process was investigated during a series of batch experiments by design of experiments(DOEs). The DOE was one of the statistical application that was used for designed the response surface to determine the effects of each parameters. The responses were applied as removal rate of Triclosan(%, $Y_1$) and TOC removal rate(%, $Y_2$). Two independent variables were concentration of Triclosan and irradiation intensity that were designed as "$x_1$" and irradiation intensity was designed as "$x_2$". The regression equation in coded parameter between the Triclosan removal efficiencies(%) and TOC removal efficiencies(%) was $Y_1=63-12.4335x_1+15.1835x_2+5.8125x{_1}^2-5.6875x{_2}^2-0.75x_1x_2(R^2=95.1%,\;R^2(Adj)=91.7%)$ and $Y_2=46-8.8462x_1+11.7175x_2-0.75x{_1}^2-6.25x{_2}^2(R^2=98.7%,\;R^2(Adj)=97.7%)$, respectively. The model predictions agreed well with the experimentally observed results $R^2$ and $R^2(Adj)$ over 90% within both of $Y_1$ and $Y_2$. This result shows that the regression model express well about the effects of parameters on E-beam process and the statistical method was successfully applied.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.15-20
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• 2019

Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).