• Title/Summary/Keyword: E-Band

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Some RNases Involved in the Processing of Bacteriophage T4 RNA (박테리오파지 T4 tRNA의 프로세싱에 관여하는 몇가지 RNase들)

  • Thong-Sung Ko
    • Journal of the Korean Chemical Society
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    • v.26 no.6
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    • pp.396-402
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    • 1982
  • Bacteriophage T4 tRNA processing in E. coli mutant strains defective in RNase Ⅲ, RNase E$^-$, and RNase P, respectively, singly or in combinations, was investigated. In $RNase E^- strains, a RNA band, which would be referred as 9S RNA, accumulates, while in RNase$ P^-$ strains, lower band of 6S double band is accumulated. In RNase III$^-$ strains, the production of tRAN$^{Gln}$ coded by T4 tRNA gene cluster, is severely depressed and also production of species 1 RNA, which is coded by T4 DNA but not by the tRNA gene cluster, is in somewhat depressed amounts; on the other hand, at the same time, an upper band of 6S double bands, coded by T4 tRNA gene cluster, is accumulated in rather greater amounts as compared to the RNase $^+$ strain. The upper band RNA of the 6S double band, however, does not appear to be a precursor to the tRNA$^{Gln}$. The present work points to the lack of evidence for an essential cleavage role of RNase Ⅲ, although there must be a role for the RNase Ⅲ in the T4 tRNA processing.

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E-band low-noise amplifier MMIC with impedance-controllable filter using SiGe 130-nm BiCMOS technology

  • Chang, Woojin;Lee, Jong-Min;Kim, Seong-Il;Lee, Sang-Heung;Kang, Dong Min
    • ETRI Journal
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    • v.42 no.5
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    • pp.781-789
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    • 2020
  • In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (Rs) and parallel (Rp) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S21 at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S21 of 16 dB to 21 dB, input matching (S11) of -14 dB to -5 dB, and output matching (S22) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

A Calculation of C-V characteristics for HgCdTe Semiconductor material (HgCdTe 반도체 재료의 C-V 특성 계산)

  • Lee, S.D.;Kang, H.B.;Kim, B.H.;ADD, ATRC, D.H.Kim;Kim, J.M.
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.813-815
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    • 1992
  • Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

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Design and fAbrication of Triple Band WLAN Antenna Applicable to Wi-Fi 6E Band with DGS (DGS를 갖는 Wi-Fi 6E 대역을 위한 삼중대역 WLAN 안테나 설계 및 제작)

  • Sang-Wook Park;Gi-Young Byun;Joong-Han Yoon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.2
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    • pp.345-354
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    • 2024
  • In this paper, we propose a triple band WLAN antenna for Wi-Fi 6E band with DGS. The proposed antenna has the characteristics required frequency band and bandwidth by considering the interconnection of two strip lines and three areas on the ground place. The total substrate size is 31 mm (W) × 50 mm (L), thickness (h) 1.6 mm, and the dielectric constant is 4.4, which is made of 22 mm (W6 + W4 + W5) × 43mm (L1 + L2 + L3 + L5) antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 340 MHz (1.465 to 1.805 GHz) for 900 MHz band, 480 MHz (2.155 to 2.635 GHz) for 2.4 GHz band and 1950 MHz (4.975 to 6.925 GHz) for 5.0/6.0 GHz band were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency triple band as required.

Design and Fabrication of SiO2/TiO2 Multi Layer Thin Films on Silicon Encapsulation of LED Deposited by E-beam Evaporation for NIR Narrow Band Pass Filter Application (NIR 협대역 투과 필터 응용을 위한 LED 실리콘 봉지재 위에 직접 E-beam으로 증착 된 SiO2/TiO2 다층 박막 설계 및 제작)

  • Kim, Dong Pyo;Kim, Kyung-Seob;Kim, Goo-Cheol;Jeong, Jung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.165-171
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    • 2022
  • The SiO2/TiO2 multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO2/TiO2 with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λp) of 660 nm and NIR LEDs with λp of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO2/TiO2 band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

Band Alignment at CdS/wide-band-gap Cu(In,Ga)Se2 Hetero-junction by using PES/IPES

  • Kong, Sok-Hyun;Kima, Kyung-Hwan
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.229-232
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    • 2005
  • Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

Valence Band Photoemission Study of Co/Pd Multilayer (광전자분광법을 이용한 Co/Pd 다층박막의 전자구조연구)

  • Kang, J.-S.;Kim, S.K.;Jeong, J.I.;Hong, J.H.;Lee, Y.P.;Shin, H.J.;Olson, C.G.
    • Journal of the Korean Magnetics Society
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    • v.3 no.1
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    • pp.48-55
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    • 1993
  • We report the photoemission (PES) studies for the Co/Pd multilayter. The Co 3d PES spectrum of Co/Pd exhibits two interesting features, one near the Fermi energy, $E_{F}$, and another at ~2.5 eV below $E_{F}$. The Co 3d peak near $E_{F}$ of Co/Pd is much narrower than that of the bulk Co, consistent with the enhanced Co magnetic moment in Co/Pd compared to that in the bulk Co. The Co 3d feature at ~-2.5 eV resembles the Pd valence band structures, which suggests a substantial hybridization between the Co and Pd sublayers. The Co 3d PES spectrum of Co/Pd is compared with the existing band structures, obtained using the local spin density functional calculations. A reasonable agreement is found concerning the bandwidth of the occupied part of the Co 3d band, whereas a narrow Co 3d peak near $E_{F}$ seems not to be described by the band structure calculations.

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The effect of elastic band based of PNF pattern on the U/E function in the spinal cord injury patient (PNF 패턴에 기초한 탄력밴드 훈련이 척수손상 환자의 상지 기능에 미치는 영향)

  • Shin Young-Il;Lee Hyoung-Soo
    • The Journal of Korean Physical Therapy
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    • v.16 no.3
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    • pp.152-160
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    • 2004
  • The purpose of this study was to investigate the effect of elastic band based of PNF pattern on the U/E function in the spinal cord injury patient. 11 subjects with spinal cord injury participated in this study. They took elastic band excercise 5 times per week for 8 weeks. One time excercise spent 35minutes. The therapeutic effect was evaluated by Cybex 6000, BTE Work Simulator, how many seconds they needed to walk 100 meters. 11 cases were examined before, after 8 week, elastic band excercise. The results of this study are as follows; 1. Isokinetic power by Cybex 6000 : The elbow flexion, shoulder flexion and extension were significant difference between test-retest(p<.05). but elbow extension were not significant difference between test-retest. 2. BTE Work Simulator : Wheelchair Propulsion and Steering Torque were significant difference between test-retest(p<.05). 3. Wheelchair Propulsion velocity : There were significant difference between test-retest(p<.05). The findings suggest that SCI patients can improve their Isokinetic power on shoulder and elbow joint, wheelchair propulsion and Steering Torque by BTE Work Simulator, Wheelchair Propulsion velocity through elastic band based of PNF pattern.

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Design of microstrip antenna for Dual-band applications (이중대역용 마이크로스트립 안테나 설계)

  • Park, Sea-Pil;Kim, Kab-Ki
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.12 no.5
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    • pp.213-217
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    • 2012
  • In this paper, we design dual-band microstrip antenna for IEEE 802.16e mobile WiMAX standard IEEE 802.11 WLAN band at the same time. To solve interference at the desired operating frequency band, impedance matching is improved and simple production method showed the characteristics of the omni-directional and compact size. The proposed structure is considered to bring the effect of the installation costs, and show the antenna for dual-band communication.

Synthesis and Band Gap Analysis of Meso-Arylporphyrins Containing Exclusively Electron Donating or Withdrawing Groups

  • Min Su Kang;Kwang-Jin Hwang
    • Journal of the Korean Chemical Society
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    • v.67 no.3
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    • pp.175-180
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    • 2023
  • Tetra-aryl substituted A4-type porphyrins (TP, TD, TA) and trans-A2B2 porphyrins (DDP1, AAP1) with electron-donating or withdrawing groups were synthesized. The band gap energy of those porphyrins was calculated from their UV-Vis spectra and CV data. With an electron-withdrawing group, the band gap energy of porphyrin TA increased via the LUMO energy up. Meanwhile, the introduction of an electron-donating group decreased the band gap of porphyrin by HOMO level up as as in the case of porphyrin TD. The band gap (2.19-2.28 eV) of metalloporphyrin PP-Ni was greater than those (1.81-2.06 eV) of non-metalloporphyrins PP due to the LUMO level up.