• Bulletin of the Korean Chemical Society
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• v.8 no.1
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• pp.6-9
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• 1987

The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.

• Analytical Science and Technology
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• v.12 no.5
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• pp.370-374
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• 1999

Extraction chromatography was used to scarch optimum separation conditions of terbium. Stationary phase was 2-ethylhexyl-2-ethylhexyl phosphonic acid(HEH[EHP])levextrel (-100~+150 mesh), column size was ${\Phi}20{\times}530mm$ and kept constantly temperature at $50^{\circ}C$, adsorption flow rate of $0.2mL/cm^2{\cdot}min$, elution flow rate of $1.0mL/cm^2{\cdot}min$, column diameter to packing height of 1:15. But to search optimum separation conditions of terbium, it changed the eluent acidity, the loading weight of sample. the composition of sample. In conclusion, acidity was 0.6 N HCl, loading weight of sample was about 5% and composition of sample was $Gd_2O_3(20%)+Tb_4O_7(60%)+Dy_2O_3(20%)$. Moreover purity of separated terbium by ICP-AES analysis was 99.98% in yield of 99.99%.

• Journal of Radiation Protection and Research
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• v.31 no.3
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• pp.129-134
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• 2006

A TL pellet for a neutron dose measurement (KCT-306) by embedding a $^6Li$-compound into a $CaSO_4:Dy$ phohphor was developed based upon the technical information of KCT-300. The KCT-300 is an another kind of $CaSO_4:Dy$ TL detector shich was developed at KAERI, in which small amounts of $NH_4H_2PO_4$ have been emvedded as a binding material. This paper presented the optimized manufacturing condition of KCT-306 and compared its sensitivity with that of the commercialized neutron TL pellets. $CaSO_4:Dy$ Phosphor with grain size ranging less than $45{\mu}m$ are used for the KCT-306. The optimum $CaSO_4:Dy$ TL phosphor, $^6Li$-compounds and P-compound as the binding material are determined as 20-40wt%, 50-70wt% and 20wt%. The TL pellet combination of our KCT-306/KCT-300, TLD-600/TLD-700 and TLD-600H/TLD-700H(Harshaw) have been irradiated in the neutron/gamma mixed fields from a $D_2O$ moderated $^{252}Cf$ neutron source. The KCT-300, TLD-700 and TLD-700H were used at the same time as gamma ray discriminators in the neutron/gamma mixed fields. It was found that the neutron/gamma response ratios of KCT-306/KCT-300, which were developed in this study, were approximately 4 times higher than those of the commercial TLD-600H/TLD-700H.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.219-223
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• 2009

Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.661-666
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

• Analytical Science and Technology
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• v.8 no.4
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• pp.553-559
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• 1995

An extraction chromatographic method of separating rare earth impurities from high purity $Nd_2O_3$, $Sm_2O_3$, $Gd_2O_3$, $Er_2O_3$, $Dy_2O_3$ and $Yb_2O_3$ was studied by using $HCl-NH_4Cl$ as moving phase and P507 as stationary phase. After the impurities were enriched from the eluate by chelant-activated carbon, the active carbon was ashed and the ignited residue was used to prepare the sample electrode for spark source mass spectrometric determination. The impurities in 99.9999% rare earth oxide can be determined by the proposed method with recovery over 80%.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.83-83
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• 2006

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.