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http://dx.doi.org/10.4191/KCERS.2009.46.2.219

Capacitance Aging Behavior of Acceptor-Doped BaTiO3 under DC Electrical Field  

Hahn, Dong-Woo (Department of Materials Engineering, Sungkyunkwan University)
Han, Young-Ho (Department of Materials Engineering, Sungkyunkwan University)
Publication Information
Abstract
Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.
Keywords
DC bias; Capacitance aging; Reliability; $BaTiO_3$; Rare earth oxides;
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