• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.364-367
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• 2007

In nano-imprint lithography (NIL) process, which has shown to be a good method to fabricate polymeric patterns, several kinds of pattern defects due to thermal effects during polymer flow and mold release operation have been reported. A typical defect in NIL process with high aspect ratio and low resist thickness pattern is a resist fracture during the mold release operation. It seems due to interfacial adhesion between polymer and mold. However, in the present investigation, FEM simulation of NIL molding process was carried out to predict the defects of the polymer pattern and to optimize the process by FEA. The embossing operation in NIL process was investigated in detail by FEM. From the analytical results, it was found that the lateral flow of polymer resin and the applied pressure in the embossing operation induce the weld line and the drastic lateral strain at the edge of pattern. It was also shown that the low polymer-thickness result in the delamination of polymer from the substrate. It seems that the above phenomena cause the defects of the final polymer pattern. To reduce the defect, it is important to check the initial resin thickness.

• 대한기계학회논문집
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• 제19권7호
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• pp.1720-1730
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• 1995

Finite-difference analysis was conducted to study the natural convection of a stably stratified salt-water solution in an annulus due to lateral heating. The main purpose of this study is to examine in detail the multi-layered flow structure. Calculation was thus made for R $a_{\eta}$=2*10$^{5}$ and 6.5*10$^{5}$ . Formation of layered flow structure, merging process of layers, the corresponding temperature and concentration distributions, Nusselt number variations with time are examined. Numerical results show that in each layer, the temperature profile looks 'S`-shaped and the concentration profile is uniform due to the convective mixing. The formation of the roll and the layer is governed by natural convection due to the temperature gradient and the merging process of the layer by diffusion of the concentration.ation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 대한산업공학회지
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• 제21권3호
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• pp.357-369
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• 1995

Wafer fabrication process is the most important and critical process in semiconductor manufacturing. The process is very complicated and hard to establish an efficient schedule due to its complexity. Furthermore, several performance indices such as due dates, throughput, cycle time and workstation utilizations are to be considered simultaneously for an efficient schedule, and some of these indices have negative correlations in performances each other. We develop an efficient heuristic scheduling algorithm; Hybrid Input Control Policy and Hybrid Dispatching Rule. Through numerical experiments, it is shown that the proposed Hybrid Scheduling Algorithm gives better performance compared with existing algorithms.

• 산업공학
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• 제13권3호
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• pp.512-520
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• 2000

An integrated process planning and scheduling model considering outsourcing in manufacturing supply chain is proposed in this paper. The process planning and scheduling considering outsourcing are actually interrelated and should be solved simultaneously. The proposed model considers the alternative process plans for job types, precedence constraints of job operations, due date of production, transportation time and production information for outsourcing. The integrated states include:(1) Operations sequencing, (2) Machine selection, (3) Scheduling with outsourcing under the due date. To solve the model, a heuristic approach based on genetic algorithm(GA) is developed. The proposed approach minimizes the makespan considering outsourcing and shows the best operation-sequences and schedule of all jobs.

• 한국기계가공학회지
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• 제4권4호
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• pp.34-38
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• 2005

This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost IR sensor. System prices are continuing to drop, and swelling production volume will soon drive process substantially lower. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control. This paper presents the design, fabrication, and the behavior of cantilever for thermomechanical sensing.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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• pp.76-79
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• 2004

This research was carried out to evaluate role of supplementary reagents, such as phosphate and SDS, to remove hydrophobic organic contaminant from soils during the EK-Fenton process. The $H_2O$$_2$ stability improved due to the role as stabilizer of phosphate and SDS during the EK-Fenton process. Furthermore, although pH in region near cathode was 8.2 after test, $H_2O$$_2$ stability improved due to transportation of SDS in the region near cathode. Therefore, in tests using phosphate and SDS as supplementary reagent, the efficiency of phenanthrene treatment improved through the EK-Fenton process using longer reaction time.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.87-92
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• 2002

We present a simple experimental method for determination of limiting intrinsic fixed-pattern non-uniformity (NU) due to fabrication process in two-dimensional CCD multiplexers (MUXs) that are used for hybrid focal plane arrays. Here, this is done by determining separately the two NUs viz. that are $V_T$ dependent and $V_T$ independent. From these measurements, process dependent NU can be extracted. It is argued that $V_T$ dependent NU can be eliminated by designing novel input circuits whereas $V_T$ independent NU, primarily, dependent on process control and material variations may be reduced but cannot be eliminated completely and hence limits the FPA performance eventually.

• 대한수학회지
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• 제56권4호
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• pp.947-984
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• 2019

We provide two shifted analogues of the tableau switching process due to Benkart, Sottile, and Stroomer; the shifted tableau switching process and the modified shifted tableau switching process. They are performed by applying a sequence of elementary transformations called switches and shares many nice properties with the tableau switching process. For instance, the maps induced from these algorithms are involutive and behave very nicely with respect to the lattice property. We also introduce shifted generalized evacuation which exactly agrees with the shifted J-operation due to Worley when applied to shifted Young tableaux of normal shape. Finally, as an application, we give combinatorial interpretations of Schur P- and Schur Q-function related identities.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.143-146
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• 1995

Due to the recent growth of die/mold machining industry, demands for the high-precision and the high0quality of die product are increasing rapidly. Free surfaces of die/mold are often manufactured using the ball-end milling process. It is difficult to find the cutting condition of the ball-end milling process due to the free form machining for the various tool paths on inclined surface.