• Proceedings of the Korean Institute of Building Construction Conference
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• 2001.11a
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• pp.8-13
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• 2001

In recently, polishing tile(porcelain homogeneous polished tile) was used in the construction field as a finishing material. But, there happened some problems such as tile exfoliation by construction condition in early ages. Also, in the dry wall system which used to lightweight wall, for use of polishing tile on dry wall, the examination of adhesive stability of polishing tile is needed. In this Paper, adhesive strength of Polishing tile was investigated by tile bond types on gypsum board and non asbestos board coated by tar-urethane and polymer modified cementitious waterproofing membrane(Series I). Then, the effect of heat stress and vibration was estimated on gypsum and non asbestos board(Series II).

• Journal of the Korea Institute of Building Construction
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• v.2 no.3
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• pp.163-170
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• 2002

Recently, polishing tile(porcelain homogeneous polished tile) was used in the construction field as a finishing material. But, there happened some problems such as tile exfoliation by construction condition in early ages. Also, for use of polishing tile in the dry wall system which used to lightweight wall, the examination of adhesive stability of polishing tile is needed. In this study, adhesive strength of Polishing tile was investigated by tile bond types on gypsum board and non asbestos board coated by tar-urethane and Polymer modified cementitious waterproofing membrane(Series I). Then, the effect of heat stress and vibration was estimated on gypsum and non asbestos board(Series II). As the result of study are the follows; (1) Polishing tile(600$\times$400mm) construction on waterproofing layer : Both laboratory estimation and spot examination sieve were happened that fall of tile because their hardening speed is late. (2) To using powder style adhesives in the dry wail with waterproofing layer : Adhesive strength of tile is Influenced by interface bond area and base side condition. (3) Shock and heat stresses : obvious decline of adhesive strength is not happened

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.295-296
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• 2010

• Journal of the Korean Society for Precision Engineering
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• v.19 no.11
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• pp.211-220
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• 2002

Optical disk drives read information by replacing a laser beam on the disk track. As information has become larger, the more accurate position control of a laser beam is necessary. In this paper, we report the analysis and fabrication of the micro mirror for optical disk drivers. A coupled simulation of gas flow and structural displacement of the micro mirror using the Finite-Element-Method is applied to this. The mirror was fabricated by using MEMS technology. Especially, the process using the lapping and polishing step after the bonding of the mirror and electrode plates was employed for the Process reliability. The mirror size was 2.5mm${\times}$3mm and it needed about 35V for displacement of 3.2 ${\mu}$.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• Journal of the Korean Recycled Construction Resources Institute
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• v.5 no.4
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• pp.435-441
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• 2017

Studies on self-healing have currently been diversified and the methods to evaluate the studies have become more diversified as well. Among them, the back-scattered electron (BSE) image acquired through the scanning electron microscope (SEM) is attempted as the means to evaluate the self-healing effect on cracks. In order evaluate by the BSE image, sophisticated pre-processing of specimen is critical and this injected inside the particle, pore and artificial crack of the hardener to stabilize the structure of the newly generated self-healing product and it enables to endure the stress on polishing without deformation. The impregnated specimen smoothen the surface to obtain the BSE image of high resolution that polishing is made for diamond suspension for wet polishing after dry polishing. As a result of evaluating the self-healing product on the impregnated and polished self-healing specimen, the generated product is formed from the surface of the artificial crack and the self-healing substances are confirmed as $Ca(OH)_2$ and C-S-H.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.63-67
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• 2008

3D integration technology has been a major focus of the next generation of IC industries. In this study Si wafer ultra-thinning has been investigated especially for the effect of ultra-thinning on the silicon surface. Wafers were grinded down to $30{\mu}m\;or\;50{\mu}m$ thickness and then grinded only samples were compared with surface treated samples in terms of surface roughness, surface damages, and hardness. Dry polishing or wet etching treatment has been applied as a surface treatment. Surface treated samples definitely showed much less surface damages and better roughness. However, ultra-thinned Si samples have the almost same hardness as a bulk Si wafer.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2020.06a
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• pp.128-129
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• 2020

In this study, flexural strength and tile adhesion strength were evaluated by using a mortar, dry mortar and an epoxy resin reinforced mortar to examine the adhesion performance by reinforcing the epoxy resin adhesive. As a result, it was clearly confirmed that the effect of improving the adhesion strength by reinforcing the epoxy resin adhesive regardless of the type of tile, and in particular, when applying the epoxy resin adhesive to the porcelain and polishing tiles, it is judged that sufficient adhesion performance can be secured.

• Applied Chemistry for Engineering
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• v.25 no.1
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• pp.53-57
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• 2014

We describe the preparation of highly-ordered etching pits on the Nb foil through a micromachining. The effects of electrochemical polishing on the formation of uniformly-patterned protective epoxy layer was investigated. Unlike the previous process using $O_2$ plasma, well-ordered etched pits were prepared without any dry processes. As a result, the Nb foil with the well-ordered pits of $10{\mu}m{\times}5{\mu}m$ could be obtained by electrochemical etching in methanolic electrolytes for 10 min.