• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.657-658
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• 2006

A Novel level-shifter circuit for Display Panel Driver is presented. A Proposed level-shifter is for the high speed and high-voltage driving capability. In order to achieve this purpose, the proposed level-shifter restricts and separates the Vgs of the output driver's pull-up PMOS and pull-down NMOS with Zener diode. And a speed-up PMOS transistor is introduced to reduce delay. The control signal of speed-up PMOS was designed by bootstrapping method to minimize the gate to source (Vgs) voltage to avoid Vgs breakdown.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1243-1246
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• 2009

A novel a-Si TFT integrated gate driver circuit which suppresses the threshold voltage shift due to prolonged positive gate bias to pull-down TFTs, is reported. Negative gate-to-drain bias is applied alternately to the pull-down TFTs to recover the threshold voltage shift. Consequently, the stability of the circuit has been improved considerably.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.897-899
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• 2000

This paper deals with the dynamic characteristic analysis of Linear Oscillatory Actuator (LOA) considering Sine Pulse Width Modulation (SPWM) method with H-bridge driver. The input current shape obtained by the driver has great influence on the driving performance of LOA. Therefore, according to the various current shapes, the analysis is achieved by using the combined equation between kinetic and electric circuit equation. Moreover, the parameters in the electric circuit equation are accurately estimated by using FEM.

• Journal of Information Display
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• v.7 no.3
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• pp.5-8
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two modes, "wake" and "sleep". The degradation of the circuit is retarded because the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.6
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• pp.564-571
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• 2014

A single-stage current-balancing multi-channel light-emitting diode (LED) driver is proposed in this study. The conventional LED driver system consists of two cascaded power conversion stages, i.e., an isolation DC/DC converter and LED driver. LED driver is usually implemented with the same number of expensive boost converters as those of LED channels to tightly control the current through each LED channel. Therefore, its overall system size is not only bulky, but the cost is rather high. By contrast, the proposed LED driver system is composed of a single power stage with the DC/DC converter and LED driver merged. Although the current balancing circuit of the proposed LED driver requires only passive devices instead of expensive boost converters, all currents through multi-channel LEDs can be well balanced. Therefore, the proposed LED driver features a small system size, improved efficiency, and low cost. To confirm the validity of the proposed driver, its operation and performance are verified on a prototype for a 46" LED TV.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.312-320
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• 2019

In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.692-695
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• 2008

Large area emissive displays have problems with nonuniform pixel characteristics and their individual ageing. A pixel integrated driver with pixel based optical feedback is presented to solve these problems. Photodetectors, optical feedback circuit and data handling capabilities are integrated in a high voltage CMOS technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.222-225
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• 2006

A custom-made display driver for an electronic paper is presented, which has high-voltage multilevel output capability and extremely low power consumption. An original level-shifter circuit can effectively reduce the power consumption and the chip area. This driver was implemented to a Quick-Response Liquid Powder Display (QR-LPD) and the image quality and power consumption was estimated.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.301-302
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• 2005

A low-power gate driver IC, which can be used for TFT-LCD application, is proposed. The short-circuit current of the output buffer is greatly reduced. An experimental prototype gate driver implemented in a $0.35-{\mu}m$ CMOS technology demonstrates that the power reduction of 16 % is obtained.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.4
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• pp.253-256
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• 2011

LEDs have small size, long lifespan, high reliability, low power consumption and high color efficiency. Using such a characteristics, LED Back Light Unit has been studying actively. This paper proposes LED driver to minimize power consumption due to LED forward voltage($V_F$) difference and temperature rising. Compared to conventional LED driver, the proposed driver have excellent stability, brief structure and linear output voltage of DC-DC boost converter. Proposed LED Driver circuit was designed using 0.35um CMOS technology. And its operation was verified through simulation.