• Magazine of the Korean Society of Agricultural Engineers
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• v.44 no.4
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• pp.129-138
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• 2002

This paper presents a study on the discharge capacity of geotextiles as a horizontal drain layer placed between the layers of earth fill and natural soft ground. Required discharge capacity of geotextiles as drain layers estimated by consolidation analysis is proportional to the consolidation coefficient of the ground soils and the width of the earth fills. The field discharge capacity of the geotextiles are measured by the hydraulic transmissivity test. And the results show wide variation according to the material characteristics of geotextiles, water content of the soils, vertical pressure, and etc. For the short horizontal drain length, geotextile filter mat can be used for the horizontal drain layer. And f3r the long drain($25{\sim}55m$), it is used for the drain together with Bord Drain.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Geotechnical Engineering
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• v.9 no.1
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• pp.45-58
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• 1993

Paper drain method is one of the methods used for the improvement of soft clay as hydraulic fill sites or the seaside industrial complex. This method adopts a card board as the drain materials instead of sand piles in sand drain method. In this paper 3 types of drain board are used to fond out the characteristics of consolidation by vacuum consolidation model test. So does the no drain board test. This test causes the reduction of pore water pressure to promote the settlement without change of ground water level. Conclusively, the vacuum consolidation shows 3-dimensional behaviors and pore water pressure reaches a negative value in a short time. In addition, it is expected to have a comparatively good consolidation effect using non -woven board, and vacuum loading results in increasing the shear strength at the bottom and top of call layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.240-250
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• 2010

Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

• Korean Journal of Medicinal Crop Science
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• v.17 no.3
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• pp.204-209
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• 2009

This study was conducted to assess water movement in paddy-upland rotation soil scheduled for ginseng cultivation through the measurement of infiltration and permeability of soil water. Soil sample was divided with four soil layers. The first soil layer (to 30cm from top soil) was loamy sand, the second and the third soil layers (30$\sim$70 ㎝) were sand, and the fourth (< 120 ㎝) was sandy loam. The soil below 130 ㎝ of fourth soil layer was submerged under water. The shear strength, which represents the resisting power of soil against external force, was 3.1 kPa in the first soil layer. This corresponded to 1/8 of those of another soil layer and this value could result in soil erosion by small amount of rainfall. The rates of infiltration and permeability depending on soil layers were 39.86 cm $hr^{-1}$ in top soil, 2.34 cm $hr^{-1}$ in 30$\sim$70 ㎝ soil layer, 5.23 cm $hr^{-1}$ and 0.18 cm $hr^{-1}$ in 70$\sim$120 ㎝ soil layer, with drain tile, and without drain tile, respectively. We consider that ground water pooled in paddy soil and artificial formation of soil layer could interrupt water canal within soil and affect negatively on water movement. Therefore, we suggest that to drain at 5 m intervals be preferable when it makes soil dressing or soil accumulation to cultivate ginseng in paddy-upland rotation soil to reduce failure risk of ginseng cultivation.

• Magazine of the Korean Society of Agricultural Engineers
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• v.38 no.4
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• pp.125-136
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• 1996

In order to investigate the characteristics of gravity drainage for geotextile, small-scale model tests for the geotextile chimney drain of earth dam which is a typical type of gravity drainage were carried out using 15 kinds of nonwoven and composite geotextiles. According to the results of this study, the drainage discharge of geotexgile drain generally increases with exponential function as hydraulic head increases and the increasing rate is greater in the coarser soil of dam material. It has a trend to increase when the construction slope of geotextile drain is steeper and the number of layers of geotextile is more. The relationship between the transmissivity of geotextile and the drainage discharge has positive correlation and the rate of increase is greater in the coarser soil. The geotextile products must be carefully selected in consideration of transmissivity of geotextile when the soil to be drained is coarser and the seepage flow is relatively high. Most of staple fiber nonwoven geotextile used in this study are found to be appropriate for drainage purpose. Among them, the composite geotextile the type of which geotextile is evaluated to be the most excellent material. But the geotextile of low permeability such as filament thermal bonded and filament spunbonded nowovens closely examined their transmissivity especially to be used for drainage function.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.143-145
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• 2016

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• Proceedings of the Korean Geotechical Society Conference
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• 2002.10a
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• pp.681-688
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• 2002

Study was peformed to develop the‘environmental double pile’for the remediation of low-permeable contaminated soil. This technique is similar in function to‘sand drain pile’But this applies recyclable oyster shell treated as waste materials to a drain material and the pile is consisted of two layers. Inner metal pile is located in center and oyster shells are filled around it. By this technology, contaminated ground water is pumped out through the oyster shell and purified by drainage, adsorption, and reaction processes. Afterwards, the grout material is injected through the inner pile for the effect of the solidification / stabilization. As a result, the concept of this technique is a development of one-step process technology. Through the test, a consolidation characteristic by radial drain is going to be evaluated and the optimum standard of this technology will be calculated.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.