• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.635-640
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• 2016

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shor-tchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ${\sim}446{\times}$ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

• 산업경영시스템학회지
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• 제31권4호
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• pp.93-99
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• 2008

In science and engineering programs in the U.S. in 2000 China, South Korea and India were top countries of origin sending students. More than half of the students intend to stay in the U.S. Immigration, education and occupational choices all have human capital aspects that require investments. A framework is proposed where expected incomes in both countries of origin and destination are calculated and used to reflect the substitution effect and the wealth effects of the expected incomes of two countries. It appears that nonpecuniary effects of education encourages immigration as much as pecuniary effects in the immigration decision equation. After the pecuniary effects are accounted for there is some negative nonpecuniary tendency of the professional scientists to immigrate to the U.S.

• Geomechanics and Engineering
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• 제13권6호
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• pp.963-975
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• 2017

Improvement of soft clay deposit by preloading with vertical drains is one of the most popular techniques followed worldwide. These drains accelerate the rate of consolidation by shortening the drainage path. Although the analytical and numerical solutions available are mostly based on equal strain hypothesis, the adoption of free strain analysis is more realistic because of the flexible nature of the imposed surcharge loading, especially for the embankment loading used for transport infrastructure. In this paper, a numerical model has been developed based on free strain hypothesis for understanding the behaviour of soft ground improvement by vertical drain with preloading. The unit cell analogy is used and the effect of smear has been incorporated. The model has been validated by comparing with available field test results and thereafter, a hypothetical case study is done using the available field data for soft clay deposit existing in the eastern part of Australia and important conclusions are drawn therefrom.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• 한국수자원학회논문집
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• 제55권spc1호
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• pp.1251-1260
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• 2022

최근 상수관망은 노후화 및 관 내 스케일의 박리로 인해 적수 사고등 수질사고가 지속적으로 발생하고 있다. 관내 퇴적되어있는 스케일은 평상시엔 안정화되어 문제를 야기하지 않지만, 상수관망 시스템의 급격한 유속 및 유향 변화 등에 의해 발생하는 수충격에 의해 박리된 후 수용가로 유입되며 수질사고를 야기한다. 이를 사전에 방지하기 위해서는 주기적인 관세척으로 스케일을 제거할 필요가 있다. 관세척공법 중 가장 보편적으로 사용되는 방법은 플러싱으로 현재 국내·외에서 관세척을 위한 유속 및 세척기준 연구가 활발하게 진행되고 있다. 하지만, 플러싱 공법 적용 시 적정유속 기준에 관한 연구가 주로 진행되어, 세척시 관내 적정유속 확보여부를 사전에 검토하기 위한 구체적인 방안에 관한 연구는 미흡한 실정이다. 관 세척시 용수는 소화전 또는 이토변을 통과하면서 주손실과 미소손실이 발생하며, 이는 관 내 유속에 영향을 미치는 요인으로 세척효과 분석에 직접적인 영향을 준다. 이에 본 연구는 Minorloss Coefficient와 Emitter Coefficient를 적용한 모의를 통해 플러싱 적용 시 관 내 유속을 분석하는 수리해석 방법을 제안하였다. 제안한 방법을 예시관망과 A시 일부구역에 적용하여 적절성을 검토하고, 소화전과 이토변의 세척효과를 비교하였다. 적용 결과 소화전을 통과하는 수리학적 조건을 고려하지 않은 경우, 실제 발생하는 손실을 고려하지 못해 소화전에서 방출 가능한 유량 대비 큰 유량과 유속이 산출되는 결과를 보였고, 이토변의 경우는 긴 세척구간에도 세척유속과 유량의 확보가 용이하여 소화전에 비해 시간적. 효율적으로 큰 세척효과가 있을 것으로 판단하였다. 하지만, 실제 상수관망의 적용 시 이토변은 소화전에 비해 설치 개수가 적어 적용이 제한적이다. 이와같은 특성을 이해하여 실무자의 판단과 대상지역의 특징에 따라서 적절한 세척계획을 수립하는 것이 필요할 것으로 판단된다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1277-1280
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• 2005

A high-aspect-ratio and high-resolution stainless steel shadow mask for organic thin-film transistors (OTFTs) circuit has been fabricated by a new method which combines photochemical machining, micro-electrical discharge machining (micro-EDM), and electrochemical etching (ECE). First, connection lines and source-drain holes are roughly machined by photochemical etching, and then the part of source and drain holes is finished by the combination of micro-EDM and ECE processes. Using this method a $100\;\mu{m}$ thick stainless steel (AISI 304) shadow mask for inverter can be fabricated with the channel length of $30\;\mu{m}\;and\;10\;\mu{m}\;respectively.\;The\;width\;of\;connection line\;is\;150\;\mu{m}$. The aspect ratio of the wall is about 5 and 15, respectively. Metal lines and source-drain electrodes of OTFTs were successfully deposited through the fabricated shadow mask.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2009년도 춘계학술대회 논문집
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• pp.194-202
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• 2009

The paper deals with the countermeasure against structure-borne noise source and noise reduction of drainage pipes. Recently, the problem the problem of the toilet drain noise of an apartment house has been become the center of public interest and a target of public grievance. Generally, the drain noise of a toilet in the apartment house has a pink noise characteristics below 2 kHz level, and therefore, the structure-borne noise has a great effect on the entire drain noise. In order to measure the transmission loss for various kinds of pipes such as PVC pipes, cast-iron pipes and newly developed AS pipes, experimental setup containing speakers as a sound source was designed and manufactured. The second-stories measurement room with a small size anechoic chamber was constructed and the noise level for different kinds of drainage pipes was measured by the sound level meter. Through the experimental research in the study, noise reduction capacity for various kinds of drainage pipes and countermeasures against structure-borne noise source are demonstrated.

• 설비공학논문집
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• 제17권5호
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• pp.452-458
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• 2005

In Korea, pumping pipe using gravity way by water is most popular method in drainage system. But, it is difficult to repair a drainpipe in this method because the drain pipe diameter is increased as using this method. In this research, we propose a new drainage system. The system aim for an adaptedness with buildings, freedom of plan, construction and renewal in water pipe equipments, etc. The new system is not need of incline of piping, and it uses drainage power that is changed potential energy by high velocity flow as making Siphonage at vertical pipe. Therefore, the diameter of piping can decreased than existing piping system established in the ceiling. Also because connecting position will be located at the lower part, it is changed the potential energy of drainage to the high velocity flow. In addition, drainage will be smooth because the fixture drain is linked by each drain pipes.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 한국정밀공학회지
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• 제31권6호
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• pp.497-504
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• 2014

The digital signage display is actively researched as the next generation of large FPD. To commercialize those digital signage display, the manufacturing cost must be downed with printing method instead of conventional photolithography. Here, we demonstrate a reverse offset printed TFT electrodes for the digital signage display. For the fabricated source/drain and gate electrode, we used Ag ink, silicone blanket, Clich$\acute{e}$ and reverse offset printer. We printed uniform TFT electrode patterns with narrow line width(10 ${\mu}m$ range) and thin thickness(nm range). In the end the printing source/drain and gate electrode are successfully achieved by optimization of experimental conditions such as Clich$\acute{e}$ surface treatment, ink coating process, delay time, off/set process and curing temperature. Also, we checked that the printing align accuracy was within 5 ${\mu}m$.