[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/JSTS.2016.16.5.635

A Recessed-channel Tunnel Field-Effect Transistor (RTFET) with the Asymmetric Source and Drain

Kwon, Hui Tae (Department of Nanoenergy Engineering, College of Nanoscience and Nanotechnology, Pusan National University)
Kim, Sang Wan (Department of Electrical Engineering and Computer Sciences, University of California)
Lee, Won Joo (Department of Nanoenergy Engineering, College of Nanoscience and Nanotechnology, Pusan National University)
Wee, Dae Hoon (Department of Nanoenergy Engineering, College of Nanoscience and Nanotechnology, Pusan National University)
Kim, Yoon (Department of Nanoenergy Engineering, College of Nanoscience and Nanotechnology, Pusan National University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.16, no.5, 2016 , pp. 635-640 More about this Journal

Abstract

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shor-tchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ${\sim}446{\times}$ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

Keywords

Tunnel filed-effect transistor (TFET); ambipolar; recessed-channel TFET;

Citations & Related Records

Times Cited By KSCI : 1 (Citation Analysis)

Reference
Cited By KSCI

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