• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.60-63
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• 2003

For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• Journal of the Korean institute of surface engineering
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• v.54 no.1
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• pp.30-36
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• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.152-153
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• 2006

The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.197-199
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• 2011

In this paper, the bottom-gate thin-film transistors (TFTs) were fabricated with an amorphous/microcrystalline Si double layer (DL) as an active layer and the variations of the electrical characteristics were investigated according to the DC bias stresses. Since the fabrication process of DL TFTs was identical to that of the conventional amorphous Si (a-Si) TFTs, it creates no additional manufacturing cost. Moreover, the amorphous/microcrystalline Si DL could possibly improve stability and mass production efficiency. Although the field effect mobility of the typical DL TFTs is similar to that of a-Si TFTs, the DL TFTs had a higher reliability with respect to the direct current (DC) bias stresses.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.461-464
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• 1999

Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

• Journal of Information Display
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• v.5 no.3
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• pp.30-34
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• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1069-1074
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• 2022

In this study, we prepared ITO thin films on the Nb₂O₅/SiO₂ double buffer layer and investigated electrical and optical properties according to the change of SiO₂ buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb₂O₅/SiO₂ double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b^*) of the ITO thin film deposited on the Nb₂O₅(10nm)/SiO₂(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb₂O₅/SiO₂ double buffer layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.1
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• pp.114-118
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• 2011

Dye-Sensitized Solar Cells(DSSCs) consist of a titanium dioxide($TiO_2$) nano film of the photo electrode, dye molecules on the surface of the $TiO_2$ film, an electrolyte layer and a counter electrode. But two transparent conductive oxide(TCO) substrates are estimated to be about 60[%] of the total cost of the DSSCs. Currently novel TCO-less structures have been investigated in order to reduce the cost. In this study, we suggested a TCO-less DSSCs which has titanium double layer electrodes. Titanium double layer electrodes are formed by electron-beam evaporation method. Analytical instruments such as electrochemical impedance spectroscopy, scanning electron microscope were used to evaluate the TCO-less DSSCs. As a result, the proposed structure decreases energy conversion efficiency and short-circuit current density compared with the conventional DSSCs structure with FTO glass, while internal series impedance of TCO-less DSSCs using titanium double layer electrodes decreases by 27[%]. Consequently, the fill factor is improved by 28[%] more than that of the conventional structure.