• 한국건축시공학회지
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• 제7권1호
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• pp.107-113
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• 2007

This study investigates the filed application in Daebul Free Trade Zone applying both a flowing method using drying shrinkage-reducing superplasticizer(SRS) and an insulating curing method using double layer bubble sheet. Test results showed that fresh concrete satisfied target slump and air content. A structure adding SRS significantly decreased the total bleeding capacity and accelerated the setting time. As for the crack occurrence, the structure applying the flowing method and double bubble sheets simultaneously exhibited the most favorable crack endurance, while conventional concrete showed more than 1mm size of crack in overall. In addition, a structure applying the flowing concrete method partially presented the micro crack. For the area proportion of crack occurrence, the structure using the double bubble sheets indicated 9.8%, while others applying flowing concrete method was 28%, compared with that of conventional one. For the compressive strength of specimens, standard curing specimens indicated $3{\sim}33%$ higher value than that of specimens cured besides the field construction. The specimens containing SRS improved the strength of $2{\sim}6MPa$, which is $10{\sim}22%$ higher than that of conventional concrete.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.27-31
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• 2008

We have studied nonvolatile memory properties of MOSFETs with double-stacked Si nanoclusters in the oxide-gate stacks. We formed Si nanoclusters of a uniform size distribution on a 5 nm-thick tunneling oxide layer, followed by a 10 nm-thick intermediate oxide and a second layer of Si nanoclusters by using LPCVD system. We then investigated the memory characteristics of the MOSFET and observed that the charge retention time of a double-stacked Si nanocluster MOSFET was longer than that of a single-layer device. We also found that the double-stacked Si nanocluster MOSFET is suitable for use as a dual-bit memory.

• 한국인터넷방송통신학회논문지
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• 제18권2호
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• pp.73-79
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• 2018

본 논문에서는 2중 유전체층 사이의 완전도체띠 격자구조에 의한 TM(transverse magnetic) 산란 문제는 전자파 수치해석 방법으로 알려진 PMM(point matching method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 도체띠의 해석을 위해 완전도체 경계조건을 적용하였다. 최소값을 가지는 변곡점들의 대부분의 반사전력은 입사각 이외의 다른 방향으로 산란된다. 전반적으로, 자유공간상에서의 반사 및 투과전력을 제외하고는 2중 유전체층의 비유전율이 증가할수록 반사전력은 증가하였고, 투과전력은 상대적으로 각각 감소하였다. 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 한국재료학회지
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• 제12권3호
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• 한국인터넷방송통신학회논문지
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• 제21권1호
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• pp.49-54
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• 2021

본 논문에서는 2중 유전체층 사이의 저항띠 격자구조에 의한 E-분극 전자파 산란 문제는 전자파 수치해석방법으로 알려진 PMM(Point Matching method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 저항띠의 해석을 위해 저항띠 경계조건을 적용하였다. 2중 유전층 사이의 비유전율과 두께 및 저항띠의 저항율에 대해 정규화된 반사전력과 투과전력을 계산하였다. 전반적으로 저항띠의 저항율이 작아지거나 유전체 층의 비유전율이 증가할수록 반사전력은 증가하였으며, 반사전력이 증가하면 투과전력은 상대적으로 감소하였다. 특히, 2중 유전체 층의 비유전율이 증가할수록 반사전력의 변곡점의 최소 값은 격자주기가 작아지는 방향으로 이동하였다. 본 논문의 제안된 구조에 대한 수치결과들은 기존논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2006년도 추계 학술대회논문집
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• pp.167-176
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• 2006

In this paper we show that solutions of the nonlinear Nernst-Planck equation possesses the quadruple-layer structure near the interface when the electrolyte receives a high frequency forcing such as a high-frequency alternating current. Very near to the interface wall, the well-known, classical Stern layer exists. Near to the Stern layer we have the secondly thin layer (to be called inner layer in this paper) where the ion concentrations behave under the same frequency as the external forcing. However, in this layer, the positive and negative ion concentrations develop with the time phase 180-degree different from each other. Next to this second layer, we have the third layer (called middle layer) in which two ion concentrations change with the time period double the forcing, and both concentrations behave in the same time phase. In the outermost layer, i.e. the forth layer, (called outer layer) the ion concentrations show the same-phase development as the third one but decaying very slowly in time. Our assertion is mostly based on the 1-D numerical simulation for the Nernst-Planck equation under a high frequency AC field assuming that the quadruple layer is very thin compared with the length scale representative of the bulk region.

• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2553-2556
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• 2010

On the basis of a simple modified Poisson-Boltzmann (SMPB) theory, taking into account the finite ionic size, the analytic expression for the effect of ionic size on the diffuse layer potential drop at negative charge densities has been given for the simple 1:1 electrolyte. It is shown that the potential drop across the diffuse layer depends on the size of the ions in the electrolyte. For a given electrolyte concentration and electrode charge density, the diffuse layer potential drop in a small ion system is smaller than that in a large ion system. It is also displayed that the diffuse layer potential drop is always less than the value of the Gouy-Chapman (GC) theory, and the deviation increases as the electrode charge density increases for a given electrolyte concentration. These theoretical results are consistent with the results of the Monte-Carlo simulation [Fawcett and Smagala, Electrochimica Acta 53, 5136 (2008)], which indicates the importance of including steric effects in modeling diffuse layer properties.

• 전기학회논문지
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• 제56권12호
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Computers and Concrete
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• 제31권1호
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• pp.9-21
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• 2023

The published studies usually used analytical method, numerical methods or experimental method to determine the stress-strain state and displacement of the single-layer or multi-layer curved shell types, but with a small scale model. However, a full scale multi-layer doubly curved concrete shell roof model should be researched. This paper presents the results of the experiment and simulation analysis involving stress-strain state, sliding between layers, the formation and development of the full scale double-layer doubly curved concrete shell roof when this shell begins to crack. The results of the this study have constructed the load-sliding strain relationship; strain diagram; stress diagram in the shell layers; the N_x, N_y membrane force diagram and deflection of shell. Thisresults by experimental method on a full scale model of concrete have clarified the working of multi-layer doubly curved concrete shell roof. The experimental and simulation results are compared with each other and compared with the Sap2000 software.

• 한국전자통신학회논문지
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• 제17권6호
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• pp.1069-1074
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• 2022

본 연구에서는 Nb₂O₅/SiO₂ 이중 버퍼층위에 ITO박막을 증착하여, SiO₂버퍼층 두께 변화 (40~50 nm)에 따른 전기적 및 광학적 특성을 조사하였다. Nb₂O₅/SiO₂ 이중 버퍼층을 도입한 ITO박막의 표면 거칠기는 0.815에서 1.181 nm 범위의 작은 값을 가지는 매끄러운 형상을 보였고, 면저항은 99.3~134.0 Ω/sq. 범위로 정전용량식 터치스크린 패널에 적용하는데 문제가 없는 것으로 나타났다. 특히 Nb₂O₅ (10 nm) / SiO₂ (40 nm) 이중 버퍼층을 삽입한 ITO박막의 단파장(400~500 nm) 영역에서의 평균 투과도와 색도(b^*)는 83.58 % 와 0.05로 이중버퍼층이 삽입되지 않은 ITO박막의 74.46 % 와 4.28에 비해 상당히 향상된 결과를 나타내었다. 이를 통해 Nb₂O₅/SiO₂ 이중 버퍼층을 도입한 ITO박막에서 인덱스 매칭 효과로 인해 단파장 영역의 투과도 및 색도와 같은 광학적 특성이 현저히 향상되었음을 확인할 수 있었다.