• 한국수소및신에너지학회논문집
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• 제26권2호
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• pp.105-113
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• 2015

In order to accelerate hydrogen society in current big renewable energy trend, it is very important that hydrogen can be transported and stored as a fuel in efficient and economical fashion. In this perspective, liquid hydrogen can be considered as one of the most prospective storage methods that can bring early arrival of the hydrogen society by its high gravimetric energy density. In this study, a small-scale hydrogen liquefier has been designed and developed to demonstrate direct hydrogen liquefaction technology. Gifford-McMahon (GM) cryocooler was employed to cool warm hydrogen gas to normal boiling point of hydrogen at 20K. Various cryogenic insulation technologies such as double walled vacuum vessels and multi-layer insulation were used to minimize heat leak from ambient. A liquid nitrogen assisted precooler, two ortho-para hydrogen catalytic converters, and highly efficient heat pipe were adapted to achieve the target liquefaction rate of 1L/hr. The liquefier has successfully demonstrated more than 1L/hr of hydrogen liquefaction. The system also has demonstrated its versatile usage as a very efficient 150L liquid hydrogen storage tank.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 대한전자공학회논문지
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• 제22권4호
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• pp.76-83
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• 1985

RMOS(refractory metal oxide semiconductor)의 게이트와 집적회로의 각 소자나 회로를 연결하는 연결선으로 사용되는 Mo2N/Mo 이중층을 Ar과 N2의 혼합가스 분위기에서 저온의 고주파 반응성스펏터링으로 형성하였다. 1000Å-Mo2N/4000Å-Mo이중층의 면저항은 약 1.20∼1.28Ω/구로서 다결정실리콘의 약 1/10정도가 되었다. C-V측정으로부터 Mo2N/Mo이중층과 비저항이 6∼9Ω·㎝이고 결정면이 (100)인 P형 Si과의 일함수차 f%5는 약 -0.30ev 및 산화층에 존재하는 고정전하밀도 Qss/q는 약 2.1x1011/cm를 얻었다. 인버터 한개당의 신호전달 지연시간을 측정하기 위해 다결정실리콘게이트 NMOS 제조공정을 웅용하여 45개의 인버터로 구성된 ring oscillator를 제작하였다. 본 실험에서 얻을 수 있었던 인버터 한개에 대한 신호전달지연시간은 약 0.8nsec였다.

• Composites Research
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• 제29권4호
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.

• 공업화학
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• 제24권5호
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• pp.489-493
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• 2013

기존의 EDLC용 활성탄소 대신 리튬이차전지용 탄소류 음전극(천연흑연, 인조흑연, 하드카본, MCMB)을 이용해 리튬이온 커패시터를 구성하면 리튬의 층간 삽입반응으로 인해 기존의 물질보다 에너지 밀도가 큰 전극소재를 개발할 수 있을 것이다. 이 실험에서는 기존 리튬이차전지 음극용 탄소 물질을 대칭 전극으로 사용하여 코인형 커패시터를 제조하여 성능을 측정하였다. 또한 리튬을 미리 삽입시킨 탄소류 전극을 이용한 커패시터를 제조한 후 성능을 측정한 결과, 축전현상이 일어나는 것을 알 수 있었다. 즉 전해액에서 전하분리에 의한 리튬이온의 이동을 보충할 수 있다면 기존의 리튬이온은 탄소류 전극의 층간으로 확산되어 들어가 기존의 대칭성 탄소류 전극의 경우에 비해 축전 용량이 증가한다. 또한 표면적이 매우 큰 graphene oxide를 사용하여 위와 같이 실험한 결과 용량이 크게 나왔으며 이로부터 슈퍼커패시터 전극용 물질에는 높은 비표면적이 중요한 요소로 작용한다는 것을 알 수 있었다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권7호
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• pp.3370-3392
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• 2017

Next Generation Beyond 4G/5G systems will rely on the deployment of small cells over conventional macrocells for achieving high spectral efficiency and improved coverage performance, especially for indoor and hotspot environments. In such heterogeneous networks, the expected performance gains can only be derived with the use of efficient interference coordination schemes, such as Fractional Frequency Reuse (FFR), which is very attractive for its simplicity and effectiveness. In this work, femtocells are deployed according to a spatial Poisson Point Process (PPP) over hexagonally shaped, 6-sector macro base stations (MeNBs) in an uncoordinated manner, operating in hybrid mode. A newly introduced intermediary region prevents cross-tier, cross-boundary interference and improves user equipment (UE) performance at the boundary of cell center and cell edge. With tools of stochastic geometry, an analytical framework for the signal-to-interference-plus-noise-ratio (SINR) distribution is developed to evaluate the performance of all UEs in different spatial locations, with consideration to both co-tier and cross-tier interference. Using the SINR distribution framework, average network throughput per tier is derived together with a newly proposed harmonic mean, which ensures fairness in resource allocation amongst all UEs. Finally, the FFR network parameters are optimized for maximizing average network throughput, and the harmonic mean using a fair resource assignment constraint. Numerical results verify the proposed analytical framework, and provide insights into design trade-offs between maximizing throughput and user fairness by appropriately adjusting the spatial partitioning thresholds, the spectrum allocation factor, and the femtocell density.

• 천문학회보
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• 제35권2호
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• pp.65.2-65.2
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• 2010

We present four new transits of the planetary system TrES-3 observed between 2009 May and 2010 June. Among those, the third transit by itself indicates possible evidence for brightness disturbance, which could originate from a starspot or an overlapping double transit. A total of 107 transit times, including our measurements, were used to determine the improved ephemeris with a transit epoch of $2454185.910950\pm0.000073$ HJED (Heliocentric Julian Ephemeris Date) and an orbital period of $1.30618698\pm0.00000016$ d. We analyzed the transit light curves using the JKTEBOP code and adopting the quadratic limb-darkening law. In order to derive the physical properties of the TrES-3 system, the transit parameters are combined with the empirical relations from eclipsing binary stars and stellar evolutionary models, respectively. The stellar mass and radius obtained from a calibration using $T_{eff}$, log $\rho$ and [Fe/H] are in good agreement with those from the isochrone analysis within the uncertainties. We found that the exoplanet TrES-3b has a mass of $1.93\pm0.07\;M_{Jup}$, a radius of $1.30\pm0.04\;R_{Jup}$, a surface gravity of $28.2\pm1.1\;m\;s^{-1}$, a density of $0.82\pm0.06\;\rho_{Jup}$, and an equilibrium temperature of $1641\pm23K$.