• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1821-1823
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• 1999

Carbon is an attractive material on electro double capacitor which depend on charge storage in the electrode/electrolyte interfacial double layer. Carbonaceous material for double layer capacitor can be obtained from carbon powder, fiber, film and porous carbon sheet. The capacitance of electrodes using an activated carbon was influenced by a filling density of the carbon, thickness and internal resistance of the electrode. In this study. to reduce internal resistance and increase electric conductivity of the electrode. activated carbon/carbon(AC/C) composite electrode was fabricated. The capacitors which have energy densities of 68F/g(at $30^{\circ}C$), 109F/g(at $60^{\circ}C$) and $68F/cm^3$(at $30^{\circ}C$), $111F/cm^3$(at $60^{\circ}C$) were fabricated by using AC/C composite electrodes.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.51-55
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• 2017

To obtain Nuclear Magnetic Resonance (NMR) measurement of membrane protein, an NMR magnet is required to generate high intensity, homogeneity, and stability of field. A High-Temperature Superconducting (HTS) magnet is a promising alternative to a conventional Low-Temperature Superconducting (LTS) NMR magnet for high field, current density, and stability margin. Conventionally, an HTS coil has been wound by several winding techniques such as Single-Pancake (SP), Double-Pancake (DP), and layer-wound. The DP winding technique has been frequently used for a large magnet because long HTS wire is generally difficult to manufacture, and maintenance of magnet is convenient. However, magnetic field generated by the slanted turns and the splice leads to field inhomogeneity in Diameter of Spherical Volume (DSV). The field inhomogeneity degrades performance of NMR spectrometer and thus effect of the slanted turns and the splice should be analyzed. In this paper, field gradient of HTS double-pancake coils considering the slanted turns and the splice was calculated using Biot-Savart law and numerical integration. The calculation results showed that magnetic field produced by the slanted turns and the splice caused significant inhomogeneity of field.

• Steel and Composite Structures
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• 제19권1호
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• pp.173-190
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• 2015

This study presents an analytical investigation on the seismic response of a medium-rise buckling-restrained braced frame (BRBF) under the near-fault ground motions. A seven-story BRBF is designed as per the current code provisions for five different combinations of brace configurations and beam-column connections. Two types of brace configurations (i.e., Chevron and Double-X) are considered along with a combination of the moment-resisting and the non-moment-resisting beam-to-column connections for the study frame. Nonlinear dynamic analyses are carried out for all study frames for an ensemble of forty SAC near-fault ground motions. The main parameters evaluated are the interstory and residual drift response, brace displacement ductility, and plastic hinge mechanisms. Fragility curves are developed using log-normal probability density functions for all study frames considering the interstory drift ratio and residual drift ratio as the damage parameters. The average interstory drift response of BRBFs with Double-X brace configurations significantly exceeded the allowable drift limit of 2%. The maximum displacement ductility characteristics of BRBs is efficiently utilized under the seismic loading if these braces are arranged in the Double-X configurations instead of Chevron configurations in BRBFs located in the near-fault regions. However, BRBFs with the Double-X brace configurations exhibit the higher interstory drift and residual drift response under near-fault ground motions due to the formation of plastic hinges in the columns and beams at the intermediate story levels.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• 한국세라믹학회지
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• 제35권5호
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• pp.443-450
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• 1998

Layered double hydroxides(LDHs) [{{{{ {Mg }_{1-x } }}{{{{ {Al }_{x } }}({{{{ {OH}_{2 } }})]ζ+({{{{ {CO }`_{3 } ^{2- } ){ }_{x/2 } }}$.${{{{ { yH}_{2 }O }} wioth variation of layer charge densitywere synthesized by co-precipitation methdo since their charge densities have a very important role to be det-ermined the physicochemical properties of layered materials. The XRD IR and thermal studies of them were discussed and the kinetic study for the decarbonation reaction was also carried out. From the results of XRD analysis we found that the lattice parameter and the unit cell volume were linearly decreased with the amount of Al substituents(x) in the vicinity of x=2∼10${\times}$1/3${\times}$10-1 but they had nearly constant values when the x are far from these vicinit. The activation energies for the decarbonation reaction of x=6.8, 10${\times}$1/3${\times}${{{{ { 10}^{-1 } }} were estimated to be 47.0, 37.6, 39.3 kcal/mol The specific surface areas(90-120 m2/g) of stable hy-drotalcite-type LDHs were dractically decreased with increasing of layer charge density.

• Current Photovoltaic Research
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• 제2권3호
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• 한국위성정보통신학회논문지
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• 제8권2호
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• pp.36-43
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• 2013

본 논문에서는 고전압에서 동작하는 DDIC(display driver IC) 칩의 정전기 보호소자로 사용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘이 분석되었다. 이온주입 조건을 달리하는 매트릭스 조합에 의한 수차례의 2차원 시뮬레이션 및 TLP 특성 데이타를 비교한 결과, BJT 트리거링 후에 더블 스냅백 현상이 나타났으나 웰(well) 및 드리프트(drift) 이온주입 조건을 적절히 조절함으로써 안정적인 ESD 보호성능을 얻을 수 있었다. 즉, 최적의 백그라운드 캐리어 밀도를 얻는 것이 고전압 동작용 정전기보호소자의 고전류 특성에 매우 중요한 영향을 주는 임계인자(critical factor)임을 알 수 있었다.

• 한국인터넷방송통신학회논문지
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• 제23권3호
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• pp.77-82
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• 2023

본 논문에서는 접지된 2중 유전체층 사이의 저항띠 격자구조에 의한 TM(tranverse magnetic) 전자파 산란문제를 전자파 수치해석방법으로 알려진 FGMM(fourier galerkin moment method)과 PMM(point matching method)을 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였으며, 저항띠의 해석을 위해 저항경계조건을 적용하였다. 전반적으로 저항율이 작으면 저항띠에 유도되는 전류밀도의 크기가 증가하였고, 반사전력도 증가하였다. 또한, 유전체층의 두께와 비유전율의 값이 증가하면 전반적으로 반사전력은 증가하였다. 본 논문의 제안된 구조에 대해 FGMM과 PMM의 수치해석 방법을 적용한 수치결과들은 매우 잘 일치하였다.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.