• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1399-1404
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• 2018

This study used an inductively coupled plasma (ICP) dry etching process with a metal amplitude mask to fabricate a double-side notched long-period fiber grating (DNLPFG) for loading sensing. The DNLPFG exhibited increasing resonance attenuation loss for a particular wavelength when subjected to loading. When the DNLPFG was subjected to force loading, the transmission spectra were changed, showing a with wavelength shift and resonance attenuation loss. The experimental results showed that the resonant dip of the DNLPFG increased with increasing loading. The maximum resonant dip of the $40-{\mu}m$ DNLPFG sensor was -26.522 dB under 0.049-N loading, and the largest force sensitivity was -436.664 dB/N. The results demonstrate that the proposed DNLPFG has potential for force sensing applications.

• Transactions of the Society of Information Storage Systems
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• v.10 no.2
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• pp.50-54
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• 2014

Object image using DRPE(Double Random Phase Encryption) in 4f system is encrypted by space-division method using amplitude mask. However, this method has the weakness for the case of having partial data of amplitude mask which can access the original image. To improve the security, we propose the method using the 2-dimension logistic chaos function which shuffles the encrypted data. It is shown in simulation results that the proposed method is highly sensitive to chaos function parameters. To properly decrypt from shuffled encryption data, below 1e-5 % errors of each parameter should be required. Thus compared with conventional method the proposed shows the higher security level.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.11
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• pp.1279-1289
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• 1992

Fault-tolerant system in improved the reliability and safety by using hardware and software redundancy. Fault mask and detection, identification techniques are conditionally used with system's application areas. Here DMR system is operated with standby and fail-safe module method that has minimal hardware and software redundancy, then its reliablity and safety comparison is presented respectively. Also this paper proposed an effective methods of dealing with transient faults as compared system's MTTFs to transient faults tolerance capabilities of self-diagnosis program.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.4
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• pp.1-9
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• 2017

In this Paper, Double Encryption Technology Based on Phase-Shifting Digital Holography and Digital Watermarking is Proposed. For the Purpose, we First Set a Logo Image to be used for Digital Watermark and Design a Binary Phase Computer Generated Hologram for this Logo Image using an Iterative Algorithm. And Random Generated Binary Phase Mask to be set as a Watermark and Key Image is Obtained through XOR Operation between Binary Phase CGH and Random Binary Phase Mask. Object Image is Phase Modulated to be a Constant Amplitude and Multiplied with Binary Phase Mask to Generate Object Wave. This Object Wave can be said to be a First Encrypted Image Having a Pattern Similar to the Noise Including the Watermark Information. Finally, we Interfere the First Encrypted Image with Reference Wave using 2-step PSDH and get a Good Visible Interference Pattern to be Called Second Encrypted Image. The Decryption Process is Proceeded with Fresnel Transform and Inverse Process of First Encryption Process After Appropriate Arithmetic Operation with Two Encrypted Images. The Proposed Encryption and Decryption Process is Confirmed through the Computer Simulations.

• Cartoon and Animation Studies
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• s.35
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• pp.181-208
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• 2014

Kon Satoshi is a representative animation film director who explores human's intrinsic self-identity based on ambivalence and delivers a message for self-reflection of entity. The aim of this study is to analyze the persona of character according to the way how a self incorporates with another self in his film; that is to say, how a mask of the personality expresses and realizes itself from the perspectives of the Jung's analytical psychology. The persona, defined as the upmost external personality, involves social behavior playing a specific role to establish constant relationship with others in a society. With increasing demand in a society, individuals get to adapt to outer environment by playing his/her given role in various masks of personality. In this way, although persona acts as a major function in relationship with outer world, it would exert a negative influence on formation of self-identity because of the inconsistency between consciousness and unconsciousness when immersed only in mask of personality, complying excessively with the demand of group. However, persona does not always have a negative effect on relationships. Developed adequately to fulfill its social function, persona is helpful to establish a healthy self-identity with balanced control between inner world of unconsciousness and outer world of consciousness. From these perspectives, this study can identify how the desire of mask hidden inside of each character expresses to function in a positive or negative way by analyzing characters in the film according to integrated pattern and correlation between consciousness and unconsciousness. Additionally, I hope that the psychological research methods in this study will be full of help for interpreting on a character analysis as a theoretical approach.

• Proceedings of the KIEE Conference
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• 1998.07b
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• pp.601-603
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• 1998

In this paper, Hadamard transform imaging spectrometers utilizing Grill spectrometers are proposed. General Hadamard Transform Spectrometers (HTS) carry out one-encoding through input masks, but Grill spectrometers carry out double-encoding through entrance and exit masks. Thus Grill spectrometers increase the signal-to-noise ratio by double-encoding. we reconfigure the system by using the Grill spectrometers which use a left cyclic S-matrix instead of the conventional right cyclic one. Then, we model the system and apply the mask characteristics method, i.e. $T^{I}$ method, to complete fast algorithm. Through computer simulations, we want to prove the superiority of the proposed system by comparing with the conventional HTS. From Observations concerning the average mean square error(AMSE) associated with estimates from the $T^{I}$ spectrum-recovery method, the relative performances of the two systems are compared.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1021-1026
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• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• ETRI Journal
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• v.37 no.3
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• pp.523-532
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• 2015

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.